SEME BUX39 LAB MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) • Fast Turn-On Time – 1ms @ IC = 15A 3 (case) • High Current Capability Applications 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. The BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching–control amplifiers, power gates, switching regulators, powerswitching circuits converters, inverters and control circuits.Other recommended applications include DC–RF amplifiers and power oscillators. The BUX39 is in SEMELAB’s maintenance series and is NOT recommended for new designs. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 120V VCBO Collector – Base Voltage VCEX Collector – Emitter Sustaining Voltage VCER Collector – Emitter Voltage VCEO(sus) Collector – Emitter Sustaining Voltage 90V VEBO Emitter – Base Voltage 7V IC Collector Current 30A ICM Peak Collector Current 40A IB Base Current 6A Ptot Total Power Dissipation @ VBE = –1.5V @ RBE = 100W TL 0.68 W / °C Maximum Junction and Storage Temperature Range Lead Temperature ³ Semelab plc. 110V 120W Derate above 25°C Tstg, Tj 120V 1/ 32 inch (0.8 mm) for 10 sec. max. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –65 to 100°C 230°C Prelim. 3/94 SEME BUX39 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* V(BR)EBO ICEO ICEX Test Conditions Collector - Emitter Sustaining IC = 0.2A Voltage L = 25mH Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current IB = 0 IC = 0 IE = 50mA Min. Typ. 90 V 7 V VCE = 70V 1 VCE = 120V VBE = –1.5V VCE = 120V VBE = –1.5V mA 1 mA 5 TC = 125°C IEBO Max. Unit Emitter Cut-off Current IC = 0 VBE = –5V Collector – Emitter IC = 12A IB = 1.2A 0.7 1.2 Saturation Voltage IC = 20A IB = 2.5A 1.25 1.6 IC = 20A IB = 2.5A 2.1 2.5 IC = 12A VCE = 4V 15 IC = 20A VCE = 4V 8 Second Breakdown VCE = 45V t = 1s 1 Collector Current VCE = 30V t = 1s 4 fT Transition Frequency IC = 1A VCE = 15V 8 tON Turn–On Time IC = 20A VCC = 30V ts Storage Time tf Fall Time VCE(sat)* VBE(sat)* hFE* IS/b Base – Emitter Saturation Voltage DC Current Gain IB = 2.5A IC = 20A VCC = 30V IB1 = –IB2 = 2.5A 1 mA 45 V V — A MHz 0.8 1.5 0.55 1 0.15 0.3 ms THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 1.46 °C/W Prelim. 3/94