BUX81 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.Other recommended applications include DC–RF amplifiers and power oscillators. TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCESM Collector – Emitter Voltage VBE = 0 1000V VCER Collector – Emitter Voltage RBE = 100Ω 500V VCEO Collector – Emitter Voltage(open base) 450V IC Collector Current (d.c) 10A ICM Peak Collector Current IB Base Current (d.c) Ptot Total Power Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Maximum Junction Temperature tp = 2ms 15A 4A 150W -65 to +200°C +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5865 Issue 1 BUX81 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CER VCE(sat)* VBE(sat)* Test Conditions Min. Typ. Max. Unit Collector - Emitter Breakdown IC = 100mA Voltage IB = 0 Collector - Emitter Breakdown IC = 100mA Voltage IB = 0 Collector – Emitter IC = 5A IB = 1.0A 1.5 Saturation Voltage IC = 8A IB = 2.5A 3.0 Base – Emitter IC = 5A IB = 1.0A 1.4 Saturation Voltage IC = 8A IB = 2.5A 1.8 VCE = 1000V VBE = 0 1 3 RBE = 50Ω 450 V 500 V V ICES Collector Cut-off Current IEBO Emitter Cut-off Current IC = 0 TC = +125°C VEB = 10V fT Transition Frequency IC = 0.5A VCE = 10V 8 MHz Cobo Output Capacitance f=100kHz IE = 0 VCB = 20V 105 pF ton Turn–On Time IC = 5A VCC = 250V 0.5 ts Storage Time IB1 = 1A IB2 = -2A 3.5 tf Fall Time 10 mA mA µs 0.8 THERMAL CHARACTERISTICS Rth j-mb Thermal Resistance Junction to Case 1.65 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5865 Issue 1