BUX80 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR Applications The BUX80 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits. TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCES Collector – Emitter Voltage VBE = 0 800V VCER Collector – Emitter Voltage RBE = 50Ω 500V VCEO Collector – Emitter Voltage IB = 0 400V VEBO Emitter – Base Voltage IC = 0 10V IC Collector Current 10A ICM Peak Collector Current 15A IB Base Current 5A Ptot Total Power Dissipation Tcase = 40°C TSTG Storage Temperature Range TJ Maximum Junction Temperature 100W -65 to +150°C +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6049 Issue 1 BUX80 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter Collector - Emitter Breakdown Test Conditions Min. Typ. Max. Unit IC = 100mA IB = 0 400 V IC = 100mA RBE = 50Ω 500 V Collector – Emitter IC = 5A IB = 1A Saturation Voltage IC = 8A IB = 2.5A Base – Emitter IC = 5A IB = 1A 1.4 Saturation Voltage IC = 8A IB = 2.5A 1.8 IEBO Emitter Cut-off Current IC = 0 VBE = 10V 10 hFE DC Current Gain IC = 1.2A VCE = 5V ton Turn–On Time IC = 5A VCC = 250V 0.5 ts Storage Time IB1 =1A IB2 = -2A 3.5 tf Fall Time IC = 5A VCC =-250V IB1 =1A IB2 = -2A VCEO(BR) VCER(BR) VCE(sat) VBE(sat)* Voltage Collector - Emitter Breakdown Voltage 1.5 3 30 V mA — µs 0.5 µs 1.1 °C/W THERMAL CHARACTERISTICS Rth j-mb Thermal Resistance Junction to Case Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6049 Issue 1