TetraFET D1023UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED C D (2 pls) E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS DT PIN 1 SOURCE (COMMON) PIN 2 GATE • LOW Crss PIN 3 SOURCE (COMMON) PIN 4 SOURCE (COMMON) • SIMPLE BIAS CIRCUITS PIN 5 DRAIN • LOW NOISE DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 117W 70V ±20V 15A –65 to 150°C 200°C Prelim.3/00 D1023UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS(th) Gate Threshold Voltage * Max. Unit V VGS = 0 ID = 100mA VDS = 28V VGS = 0 3 mA VGS = 20V VDS = 0 1 mA ID = 10mA VDS = VGS 7 V ID = 3A gfs Forward Transconductance * VDS = 10V GPS Common Source Power Gain PO = 60W Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz h Typ. IDQ = 0.3A 70 1 2.4 S 16 dB 50 % 20:1 — Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 180 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 90 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 7.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 1.5°C / W Prelim.3/00