TetraFET D2081UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 12V – 1GHz SINGLE ENDED 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16˚ m ax. 13˚ 1 .7 0 m ax. FEATURES 10˚ m ax. • SIMPLIFIED AMPLIFIER DESIGN 6 .7 6 .3 3 .1 2 .9 • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 4 3 .7 7 .3 3 .3 6 .7 1 2 3 • LOW NOISE (Typical < 2dB NF) • HIGH GAIN – 11dB MINIMUM • SURFACE MOUNT 1 .0 5 0 .8 5 0 .8 0 0 .6 0 2 .3 0 APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 2.5 GHz 4 .6 0 SOT–223 PIN 1 GATE PIN 2 DRAIN PIN 3 SOURCE PIN 4 DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2W 65V ±20V 200mA –65 to 125°C 150°C Prelim. 5/96 D2081UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit VGS = 0 |D = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.2A GPS Common Source Power Gain PO = 750mW η Drain Efficiency VDS = 12V IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance 65 V 1 IDQ = 75mA f = 1GHz 0.18 mhos 11 dB 40 % 10:1 — Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 * Pulse Test: VGS = –5V f = 1MHz 12 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 70°C / W S Parameters at Vd = 12V, Id = 75mA Semelab plc. Freq MHz mag S11 ang mag S12 ang mag S21 ang mag ang 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.47 0.46 0.47 0.49 0.51 0.53 0.54 0.55 0.56 0.57 0.58 0.60 0.60 0.59 0.58 0.56 0.54 0.51 -95 -120 -131 -146 -156 -163 -180 178 175 163 150 144 140 130 123 115 110 108 0.04 0.05 0.07 0.10 0.15 0.20 0.25 0.29 0.34 0.40 0.45 0.48 0.52 0.55 0.58 0.60 0.62 0.62 50 80 100 110 110 104 100 96 91 85 80 75 70 66 63 58 54 50 5.20 4.40 3.50 3.00 2.60 2.30 2.10 1.80 1.60 1.40 1.30 1.20 1.10 1.00 0.95 0.90 0.90 0.90 90 76 68 59 51 45 40 36 33 28 26 24 22 21 20 19 20 20 0.32 0.35 0.38 0.43 0.48 0.54 0.58 0.60 0.63 0.65 0.66 0.66 0.66 0.65 0.65 0.64 0.64 0.63 -90 -91 -94 -98 -103 -108 -112 -116 -120 -126 -129 -133 -135 -138 -140 -142 -144 -145 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. S22 Prelim. 5/96 D2081UK TYPICAL PERFORMANCE BFM21 at 1GHz Bias Conditions Vd = 12V, Idq = 75mA 1000 900 800 700 Pow er O utput (m W ) 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 Pow er Input (m W ) +12V BIAS C4 C3 R1 L1 L2 T3 T1 C7 T2 C1 C5 C6 C2 BFM21UK 1GHz Test Circuit C1, C7 33pF ATC100B C2, C5, C6 1–8pF T1 50Ω microstrip, 11mm long C3, C4 1000pF NPO T2 50Ω microstrip, 15mm long L1 0.1µH T3 50Ω microstrip, 5mm long L2 10mm of 1.6mm tcw (half turn) Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96