TetraFET D2014UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L G (4 PLS) N D M (2 PLS) PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND SOT 171 DIM A B C D E F G H I J K L M N O GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 500MHz SINGLE ENDED Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0.041 0.725 0.975 0.108 0.360 0.165 0.005 0.280 Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAX APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V ±20V 1A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2916 Issue 2 D2014UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.2A GPS Common Source Power Gain PO = 2.5W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 500MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.1A 65 1 0.18 S 13 dB 40 % 20:1 — Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 12 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 10°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2916 Issue 2