IRFF230 2N6798 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V 5.08 (0.200) typ. • ID = 5.5A 2.54 (0.100) 2 1 3 Ω • RDSON = 0.40Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 45° TO–39 PACKAGE (TO-205AF) Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VGS ID Drain–Source Voltage Gate–Source Voltage Drain Current Continuous TCase = 25°C TCase = 100°C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25°C TCase = 100°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. 200V ±20V 5.5A 3.5A 22A 25W 10W –55 to +150°C 5.0°C/W 175°C/W 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3096 Issue 3 IRFF230 2N6798 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. V(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = 1mA 200 VGS(th) Gate Thresshold Voltage VDS=VGS ID = 250μA 2.0 IGSS Gate–Body Leakage VDS = 0 VGS = ±20V IDSS Zero Gate Voltage Drain Current rDS(on) Drain–Source On–Resistance1 Transconductance1 Typ. 4.0 ±100 VDS =0.8 x V(BR)DSS VGS = 10V Tj = 125°C ID = 3.5A VDS = 15V ID = 3.5A VDS = 25V VGS = 0 VGS = 0 Max. Unit 25 250 0.25 0.4 gfs Forward Ciss Input Capacitance Coss Output capacitance Crss Reverse Transfer Capacitance tdon Turn–On Delay Time VDD = 77V RL = 22Ω 8 30 tr RiseTime ID = 3.5A VGEN = 10V 42 50 td(of) Turn off Delay Time 12 50 tf FallTime 30 40 f = 1.0MHZ RG = 7.5 ohms 2.5 3.0 V nA μA Ω Ω s( ) 600 pF 250 80 ns SOURCE DRAIN DIODE RATING CHARACTERISTICS VSD Diode Forward Voltage1 IS Continues Current IF = 5.5A VGS = 0 1.4 5.5 Current2 ISM Pulsed trr Reverse Recovery Time IF = 5.5A Qrr Reverse Recovered Charge dIF/DT = 100A/μS V A 22 VDD = 50V 150 500 ns 6 μC 1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3096 Issue 3