SEME-LAB IRFY044

IRFY044
MECHANICAL DATA
Dimensions in mm (inches)
4.70
5.00
0.70
0.90
3.56
Dia.
3.81
VDSS
ID(cont)
RDS(on)
10.41
10.92
13.39
13.64
10.41
10.67
16.38
16.89
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
12.70
19.05
1 2 3
60V
20A
Ω
0.035Ω
FEATURES
0.89
1.14
2.54
BSC
2.65
2.75
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ TC = 25°C
20A
ID
Continuous Drain Current @ TC = 100°C
20A
IDM
Pulsed Drain Current
128A
PD
Power Dissipation @ TC = 25°C
60W
Linear Derating Factor
0.48W/°C
TJ , Tstg
Operating and Storage Temperature Range
–55 to 150°C
RθJC
Thermal Resistance Junction to Case
2.1°C/W max.
RθJA
Thermal Resistance Junction to Ambient
80°C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
IRFY044
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
RDS(on)
Breakdown Voltage
Static Drain – Source On–State
Resistance
VGS(th) Gate Threshold Voltage
Test Conditions
VGS = 0
ID = 1mA
Min.
Typ.
Max.
60
Reference to 25°C
V
0.68
ID = 1mA
V / °C
0.035
Ω
4
V
(Ω)
S(Ω
VGS = 10V
ID = 20A
VDS = VGS
ID = 250µA
2
VDS ≥ 15V
ID = 20A
17
VGS = 0
VDS = 0.8BVDSS
25
TJ = 125°C
250
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
2400
Coss
Output Capacitance
VDS = 25V
1100
Crss
Reverse Transfer Capacitance
f = 1MHz
230
Qg
Total Gate Charge
VGS = 10V
39
88
Qgs
Gate – Source Charge
ID = 20A
6.7
15
Qgd
Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
18
52
td(on)
Turn–On Delay Time
VGS = 10V
23
tr
Rise Time
VDD = 30V
130
td(off)
Turn–Off Delay Time
ID = 20A
81
tf
Fall Time
RG = 9.1Ω
79
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
20
ISM
Pulse Source Current
128
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IF = 20A
Qrr
Reverse Recovery Charge
di / dt ≤ 100A/µs VDD ≤ 50V
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from 6mm down drain lead pad to centre of die)
8.7
LS
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
8.7
Semelab plc.
IS = 20A
TJ = 25°C
VGS = 0
TJ = 25°C
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Unit
µA
nA
pF
nC
ns
A
2.5
V
220
ns
1.6
µC
nH
Prelim. 11/95