IRFF420 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 500V 1.5 3.0W 5 .0 8 (0 .2 0 0 ) ty p . ! FEATURES 2 .5 4 (0 .1 0 0 ) • AVALANCHE ENERGY RATED 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) • HERMETICALLY SEALED 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) • DYNAMIC dv/dt RATING 4 5 ° • SIMPLE DRIVE REQUIREMENTS TO39 – Package Pin 1 – Source Pin 2 – Gate Pin 3 – Drain Also available in a low profile version. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 1.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 1A IDM Pulsed Drain Current 1 6.5A PD Power Dissipation @ Tcase = 25°C 20W ±20V Linear Derating Factor 0.16W/°C EAS Single Pulse Avalanche Energy 2 0.11mJ dv/dt Peak Diode Recovery 3 3.5V/ns TJ , Tstg Operating and Storage Temperature Range RqJC RqJCA Thermal Resistance Junction to Case 6.25°C/W Thermal Resistance Junction-to-Ambient 175°C/W –55 to 150°C Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 0.100mH , RG = 25W , Peak IL = 1.5A , Starting TJ = 25°C 3) @ ISD £ 1.5A , di/dt £ 50A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 4/99 IRFF420 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Test Conditions VGS = 0 ID = 1mA Min. Typ. Max. 500 Reference to 25°C V 0.43 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 1A Resistance VGS = 10V ID = 1.5A VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 gfs Forward Transconductance VDS ³ 15V IDS = 1A 1 IDSS Zero Gate Voltage Drain Current VGS = 0 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 RDS(on) Unit 3 3.45 W 4 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 350 Coss Output Capacitance VDS = 25V 80 Crss Reverse Transfer Capacitance f = 1MHz 35 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time VGS = 10V ID = 1.5A pF 7.3 16.7 ID =1.5A 0.1 3 VDS = 0.5BVDS 3.7 8.7 VDS = 0.5BVDS nC nC 40 VDD = 250V 30 ID = 1.5A 60 RG = 7.5W ns 30 SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 1.5 ISM Pulse Source Current 2 6.5 VSD Diode Forward Voltage trr Reverse Recovery Time IF = 1.5A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 5.0 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 15.0 IS = 1.5A TJ = 25°C VGS = 0 TJ = 25°C A 1.2 V 900 ns 5.9 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 4/99