IRFM054 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 1 2 VDSS ID(cont) RDS(on) 60V 35A * Ω 0.027Ω FEATURES 3 • HERMETICALLY SEALED ISOLATED PACKAGE • AVALANCHE ENERGY RATING 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS 3.81 (0.150) BSC TO–254AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • ALSO AVAILABLE IN TO–220 METAL AND SURFACE MOUNT PACKAGES • EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 35A* ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 35A IDM Pulsed Drain Current 1 220A PD Power Dissipation @ Tcase = 25°C 150W Linear Derating Factor 1.2W/°C EAS Single Pulse Avalanche Energy 2 480mJ dv/dt Peak Diode Recovery 3 4.5V/ns TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature measured 1/16” (1.6mm) from case for 10 sec. RθJC Thermal Resistance Junction to Case 0.83°C/W RθCS Thermal Resistance Case to Sink (Typical) 0.21°C/W RθJA Thermal Resistance Junction to Ambient –55 to 150°C 300°C 48°C/W Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2) @ VDD = 25V , L ≥ 450µH , RG = 25Ω , Peak IL = 35A , Starting TJ = 25°C 3) @ ISD ≤ 35A , di/dt ≤ 200A/µs , VDD ≤ BVDSS , TJ ≤ 125°C , SUGGESTED RG = 2.35Ω * ID Current limited by pin diameter. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/94 IRFM054 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Resistance 2 VGS(th) Gate Threshold Voltage 2 V / °C 0.027 Ω 4 V (Ω) S(Ω VGS = 10V ID = 35A VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 35A 20 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance CDC Drain – Case Capacitance Qg Total Gate Charge VGS = 10V 80 180 Qgs Gate – Source Charge ID = 35A 20 45 Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 34 105 td(on) Turn– On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 2000 VDS = 25V f = 1MHz 12 180 100 35* trr Reverse Recovery Time 2 220 IS = 35A TJ = 25°C VGS = 0 IF = 35A 2 ns 100 1 Diode Forward Voltage 2 nC 33 RG = 2.35Ω VSD nA pF 340 ID = 35A Pulse Source Current µA 4600 VGS = 0 VDD = 30V ISM Unit V 0.68 ID = 1mA Static Drain – Source On–State Max. 60 Reference to 25°C Breakdown Voltage Typ. TJ = 25°C di / dt ≤ 100A/µs VDD ≤ 50V Qrr Reverse Recovery Charge ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7 LS Internal Source Inductance 8.7 A 2.5 V 280 ns 2.2 µC Negligible Measured from 6mm down source lead to source bond pad nH Notes 1) Repetitive Rating – Pulse width limited by Maximum 2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Junction Temperature * IS Current limited by pin diameter. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/94