IRFE9110 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045) 4 VDSS ID(cont) RDS(on) -100V -2.2A 1.2W 0.76 (0.030) 0.51 (0.020) 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) 0.43 (0.017) 0.18 (0.007 Rad. FEATURES • SURFACE MOUNT • SMALL FOOTPRINT LCC4 • HERMETICALLY SEALED MOSFET TRANSISTOR PINS GATE DRAIN SOURCE BASE COLLECTOR EMITTER 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 • DYNAMIC dv/dt RATING • AVALANCHE ENERGY RATING • SIMPLE DRIVE REQUIREMENTS • LIGHT WEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C – 2.2A ID Continuous Drain Current @ Tcase = 100°C – 1.4A IDM Pulsed Drain Current – 8.8A PD Power Dissipation @ Tcase = 25°C Linear Derating Factor EAS Single Pulse Avalanche Energy 2 dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range Surface Temperature ( for 5 sec). Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 11W 0.090W/°C 87mJ – 5.5V/ns – 55 to +150°C 300°C 1/00 IRFE9110 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time IS ISM VSD trr Qrr ton LD LS RqJC RqJPC Test Conditions VGS = 0 ID = –1mA Reference to 25°C ID = –1mA VGS = –10V ID = –1.4A VGS = –10V ID = –2.2A VDS = VGS ID = –250mA VDS ³ –15V IDS = –1.4A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = –20V VGS = 20V VGS = 0 VDS = –25V f = 1MHz VGS = –10V ID = –2.2A VDS = 0.5BVDSS Min. Typ. PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Junction – PC Board Unit V –100 V / °C – 0.10 1.2 1.38 –4 –2 0.8 – 25 – 250 – 100 100 200 85 30 4.0 0.8 1.9 W V S (É) mA nA pF 9.8 1.8 4.3 30 60 40 40 VDD = –50V ID = –2.2A RG = 7.5W SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = –2.2A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = –2.2A TJ = 25°C 1 Reverse Recovery Charge di / dt £ –100A/ms VDD £ –50V Forward Turn–On Time Max. nC ns –2.2 –8.8 A –5.5 V 200 9.0 ns mC Negligible 1.8 4.3 nH 11 27 °C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 1/00