Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and core driver applications. 2N3506, 2N3506L, 2N3507, 2N3507L Features: High current and high speed capability Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness Chip Area Top Surface Al - 22 kÅ min. Au - 6.5 kÅ nom. 9.0 mils x 6.0 mils 7.0 mils x 11.0 mils 8 mils nominal 60 mils x 60 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter Test conditions Min Max Unit BVCEO IC = 10 mA, IB = 0 40 --- V dc BVCBO IC = 100 µA, IE = 0 60 --- V dc BVEBO IE = 10 µA, IC = 0 5.0 --- V dc hFE IC = 500 mA dc, VCE = 1.0 V 50 ----Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%.