2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The U4 package is hermetically sealed and provides a low profile for minimizing board height. The 'A' version maintains it's forward current transfer ratio, h FE , at low temperature at higher collector-emitter voltage. These devices also available in TO-5 and TO-39 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. U4 Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES Also available in: • JEDEC registered 2N3506U4 through 2N3507U4 series. • RoHS compliant versions available (commercial grade only). • Vce(sat) = 0.5 V @ Ic = 500 mA • Rise time t r = 30 ns max @ I C = 1.5 A, I B1 = 150 mA • Fall time t f = 35 ns max @ I C = 1.5 A, I B1 = I B2 = 150 mA TO-39 package (leaded) 2N3506 – 2N3507A TO-5 package (leaded) 2N3506L – 2N3507AL APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. MAXIMUM RATINGS Parameters / Test Conditions Symbol 2N3506U4 2N3507U4 Unit Collector-Emitter Voltage V CEO 40 50 V Collector-Base Voltage V CBO 60 80 V Emitter-Base Voltage V EBO 5.0 V IC 3.0 A PD 1.0 5.0 W T J , T stg -65 to +200 °C Collector Current Total Power Dissipation (1) @ T A = +25 °C (2) @ T C = +100 °C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly 5.71 mW/°C for T A > +25 °C. 2. Vce = 40V. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 1 of 6 2N3506U4 thru 2N3507AU4 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid. TERMINALS: Gold over nickel plated surface mount terminations MARKING: Part number, Date Code, Manufacturer’s ID POLARITY: See package dimensions TAPE & REEL option: Standard per EIA-481D. WEIGHT: .125 grams (125 milligrams). See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3506 A U4 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Package type U4 = surface mount JEDEC type number (see Electrical Characteristics table) Level improvement A = maintains h FE @ -55°C at higher V CE SYMBOLS & DEFINITIONS Symbol C obo IC I CEO I CEX Definition common-base open-circuit output capacitance collector current, dc collector cutoff current, base open collector cutoff current, circuit between base and emitter I EBO h FE V BE V CE V CEO V CBO emitter cutoff current, collector open common-emitter static forward current transfer ratio base-emitter voltage, dc collector-emitter voltage, dc collector-emitter voltage, base open collector-emitter voltage, emitter open V EB V EBO emitter-base voltage, dc emitter-base voltage, collector open LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 2 of 6 2N3506U4 thru 2N3507AU4 ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 10 mA 2N3506U4 2N3507U4 Collector-Emitter Cutoff Current V CE = 40 V V CE = 60 V 2N3506U4 2N3507U4 Collector-Base Breakdown Voltage I C = 100 µA 2N3506U4 2N3507U4 Emitter-Base Breakdown Voltage I E = 10 µA Symbol Min. V (BR)CEO 40 50 I CEX Max. Unit V 1.0 1.0 µA V (BR)CBO 60 80 V V (BR)EBO 5 V Symbol Min. Max. 250 175 200 150 (3) ON CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio I C = 500 mA, V CE = 1 V 2N3506U4 2N3507U4 h FE 50 35 Forward-Current Transfer Ratio I C = 1.5 A, V CE = 2 V 2N3506U4 2N3507U4 h FE 40 30 Forward-Current Transfer Ratio I C = 2.5 A, V CE = 3 V 2N3506U4 2N3507U4 h FE 30 25 Forward-Current Transfer Ratio I C = 3.0 A, V CE = 5 V 2N3506U4 2N3507U4 h FE 25 20 Forward-Current Transfer Ratio I C = 500 mA, V CE = 1.0 V @ -55 °C 2N3506U4 2N3507U4 h FE 25 17 Forward-Current Transfer Ratio I C = 500 mA, V CE = 2.0 V @ -55 °C 2N3506AU4 2N3507AU4 h FE 25 17 Unit Collector-Emitter Saturation Voltage I C = 500 mA, I B = 50 mA V CE(sat) 0.5 V Collector-Emitter Saturation Voltage I C = 1.5 A, I B = 150 mA V CE(sat) 1.0 V Collector-Emitter Saturation Voltage I C = 2.5 A, I B = 250 mA V CE(sat) 1.5 V Base-Emitter Saturation Voltage I C = 500 mA, I B = 50 mA V BE(sat) 1.0 V Base-Emitter Saturation Voltage I C = 1.5 A, I B = 150 mA V BE(sat) 1.3 V Base-Emitter Saturation Voltage I C = 2.5 A, I B = 250 mA V BE(sat) 2.0 V LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation 0.8 Page 3 of 6 2N3506U4 thru 2N3507AU4 ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 100 mA, V CE = 5 V, f = 20 MHz |h fe | 3.0 15 Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 40 pF Input Capacitance V EB = 3.0 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 300 pF Max. Unit SWITCHING CHARACTERISTICS (4) Parameters / Test Conditions Symbol Min. Delay Time I C = 1.5 A, I B1 = 150 mA td 15 ns Rise Time I C = 1.5 A, I B1 = 150 mA tr 30 ns Storage Time I C = 1.5 A, I B1 = I B2 = 150 mA ts 55 ns Fall Time I C = 1.5 A, I B1 = I B2 = 150 mA tf 35 ns NOTES: (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. (4) Consult MIL-PRF-19500/349 for additional information. LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 4 of 6 2N3506U4 thru 2N3507AU4 GRAPHS DC Operation Maximum Rating (W) 6 =================== Legend (Top to Bottom) =================== Vce = 4V Vce = 15V Vce = 60V 5 4 3 2 1 0 25 50 75 100 125 150 175 200 225 o T C ( C) (Case) FIGURE 1 Temperature-Power Derating Curve o THETA ( C/W) NOTES: Thermal Resistance Junction to Case = 7.0 oC/W Case mounted to infinite sink. TIME (s) FIGURE 2 Maximum Thermal Impedance (R ӨJC ) LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 5 of 6 2N3506U4 thru 2N3507AU4 PACKAGE DIMENSIONS NOTES: 1. 2. 3. Dimensions are in inches. Millimeter equivalents are given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. LDS-0016-2, Rev. 1 (111616) Ltr Inches Dimensions Millimeters Min Max Min Max BL BW CH LH LW1 LW2 LL1 0.215 0.145 0.049 5.46 3.68 1.24 0.135 0.047 0.085 0.225 0.155 0.075 0.02 0.145 0.057 0.125 3.43 1.19 2.16 5.72 3.94 1.91 0.51 3.68 1.45 3.17 LL2 0.045 0.075 1.14 1.90 LS1 0.070 0.095 1.78 2.41 LS2 Q1 Q2 0.035 0.03 0.02 0.048 0.070 0.035 0.89 0.76 0.51 1.21 1.78 0.88 TERMINAL 1 COLLECTOR 2 3 BASE EMITTER ©2011 Microsemi Corporation Page 6 of 6