SEMICOA 2N2857

Data Sheet No. 2N2857
Generic Part Number:
2N2857
Type 2N2857
Geometry 0011
Polarity NPN
Qual Level: JAN - JANS
REF: MIL-PRF-19500/343
Features:
•
Low power, ultra-high frequency
transistor.
•
Housed in TO-72 case.
•
Also available in chip form using
the 0011 chip geometry.
•
The Min and Max limits shown are
per MIL-PRF-19500/343 which
Semicoa meets in all cases.
TO-72
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
15
V
Collector-Base Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current, Continuous
IC
40
mA
Operating Junction Temperature
TJ
-65 to +200
TSTG
-65 to +200
Storage Temperature
o
C
o
C
Data Sheet No. 2N2857
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 1 µA
Collector-Emitter Breakdown Voltage
IC = 3 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCB = 15 V
Collector-Base Cutoff Current
VCB = 15 V
ON Characteristics
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 1 mA
Small Signal Characteristics
Forward Current Transfer Ratio
IC = 3 mA, VCE = 1 V
IC = 2 mA, VCE = 6 V, case lead floating
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 6 V, IC = 5 mA, f = 100 MHz
Small Signal Power Gain
Collector-Base Feedback Capacitance
VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 6 V, IE = 2 mA, f = 31.9 MHz
Noise Figure
VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz
Symbol
Min
Max
Unit
V(BR)CBO
30
---
V
V(BR)CEO
15
---
V
V(BR)EBO
3.0
---
V
ICES
---
100
nA
ICBO
---
10
nA
Symbol
Min
Max
Unit
VCE(sat)
---
0.4
V dc
VBE(sat)
---
1.0
V dc
Symbol
Min
Max
Unit
hFE
hFE
30
50
150
220
-----
|hFE|
10
21
---
GPE
12.5
21
dB
CCB
---
1.0
pF
rb'CC
4.0
15
ps
NF
---
4.5
dB