Data Sheet No. 2N2857 Generic Part Number: 2N2857 Type 2N2857 Geometry 0011 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/343 Features: • Low power, ultra-high frequency transistor. • Housed in TO-72 case. • Also available in chip form using the 0011 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/343 which Semicoa meets in all cases. TO-72 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 15 V Collector-Base Voltage VCBO 30 V Emitter-Base Voltage VEBO 3.0 V Collector Current, Continuous IC 40 mA Operating Junction Temperature TJ -65 to +200 TSTG -65 to +200 Storage Temperature o C o C Data Sheet No. 2N2857 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 1 µA Collector-Emitter Breakdown Voltage IC = 3 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCB = 15 V Collector-Base Cutoff Current VCB = 15 V ON Characteristics Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 1 mA Small Signal Characteristics Forward Current Transfer Ratio IC = 3 mA, VCE = 1 V IC = 2 mA, VCE = 6 V, case lead floating Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio VCE = 6 V, IC = 5 mA, f = 100 MHz Small Signal Power Gain Collector-Base Feedback Capacitance VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz Collector-Base Time Constant VCE = 6 V, IE = 2 mA, f = 31.9 MHz Noise Figure VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz Symbol Min Max Unit V(BR)CBO 30 --- V V(BR)CEO 15 --- V V(BR)EBO 3.0 --- V ICES --- 100 nA ICBO --- 10 nA Symbol Min Max Unit VCE(sat) --- 0.4 V dc VBE(sat) --- 1.0 V dc Symbol Min Max Unit hFE hFE 30 50 150 220 ----- |hFE| 10 21 --- GPE 12.5 21 dB CCB --- 1.0 pF rb'CC 4.0 15 ps NF --- 4.5 dB