SKM 400GB124D Absolute Maximum Ratings Symbol Conditions IGBT %,8 , ,= %!8 ? % 5 26 :3 7, 5 1 8=/ @ -= - 5 13 E AE ? 5 163 7, SKM 400GB124D -= 5 26 :3 7, 5 1 - 5 13 E AE ? 5 163 7, SKM 400GAL124D Characteristics Symbol Conditions IGBT SKM 400GAR124D %!8 Features 1233 6;3 <33 *33 > 23 <3 AAA B 163 126 % / / % 7, 2633 % CD3 2*3 *33 / / 2D33 / CD3 2*3 *33 / / 2D33 / Freewheeling diode - Units /, 1 A 5 26 :3 7, 5 1 - Low Loss IGBT Modules Values Inverse diode SEMITRANSTM 3 5 26 7, $ ) !" #$ %& $ $ $ ' (& ) * + , # ) - . ) ,/# 0 ( 0," 0 , " & $ # 12 23 Typical Applications $ ) 4 ,8 %,8 ,8 %,8 %!8 5 %,8 , 5 12 / %!8 5 3 %,8 5 %,8 ? 5 26 126 7, ? 5 26 126 7, %!8 5 16 % ? 5 26 126 7, , 5 26 7, $ ) min. <6 5 C33 / %!8 5 16 % , , , #,8 )$ %!8 5 3 %,8 5 26 % ) 5 1 'G =,,HB88H A 5 26 126 7, )) ) %,, 5 *33 % , 5 C33 / =! 5 =!)) 5 6 F ? 5 126 7, %!8 5 > 16 % 8 8)) typ. max. Units 66 32 11 11 CC <C *6 3* 126 126 < 6C % / % F 21 2< 2<6 2:6 % 22 CC 12 C3 < 1* 23 ' 3C6 36 F :6 *6 *:3 6* C* <2 I Inverse diode %- 5 %8, J - 5 C33 /E %!8 5 3 %E ? 5 26 126 7, ? 5 126 7, ? 5 126 7, - 5 C33 /E ? 5 126 7, K 5 /KL 8 %!8 5 % % == 2 1: 26 % 11 12 C6 % F / L, 1C* C* I FWD %- 5 %8, % J - 5 C33 /E %!8 5 3 % ? 5 26 126 7, ? 5 126 7, ? 5 126 7, - 5 C33 /E ? 5 126 7, K 5 /KL 8 %!8 5 % == 2 1: 11 26 12 C6 1C* C* % % F / L, I Thermal characteristics =? =?0 =?-0 !" 0 -N0 336 3126 3126 MKN MKN MKN = 33C: MKN 6 6 C26 Mechanical data GB GAL GAR O * * $ 1 19-09-2005 RAA C 26 © by SEMIKRON SKM 400GB124D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 19-09-2005 RAA © by SEMIKRON SKM 400GB124D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 19-09-2005 RAA © by SEMIKRON SKM 400GB124D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm !" , 0 6* !/# , 0 6; P 0 6* !/= , 0 6: P 0 6* , 0 6* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-09-2005 RAA © by SEMIKRON