SKM 195GB124DN Absolute Maximum Ratings Symbol Conditions IGBT 7+3 + +:; 73 !> 7 SEMITRANSTM 2N Low Loss IGBT Modules SKM 195GB124DN SKM 195GAL124DN Features ! " " " # $% & ' ( ) * & ! +, "" - " " ./ " " 0/ Typical Applications & " " 1+ ! " $ "! ! 1+ ,+ " 2 2 $ 3 $ " 4 05 6+ & " 4 05 9/ 6+ 4 05 9/ 6+ 4 . ?3:,? @ Values Units .0// 0'/ .9/ 50/ <'/ = 0/ A/ BBB C .5/ .05 7 , , 7 6+ 05// 7 0// .'/ 50/ <'/ , , .A5/ , ,+ . B Inverse diode ) ):; 4 05 9/ 6+ 4 05 9/ 6+ 4 . ); 4 ./ D BD > 4 .5/ 6+ Characteristics Symbol Conditions IGBT 73 +3 7+3? +3 73 4 7+3 + 4 ' , 73 4 / 7+3 4 7+3 > 4 05 .05 6+ > 4 05 .05 6+ 73 4 .5 7 > 4 05 .05 6+ 7+3 + 4 .5/ , 73 4 .5 7 ! + + + +3 " & " 73 4 / 7+3 4 05 7 & 4 . ;#F :++GC33G B 4 05 .05 6+ " "&& & 7++ 4 '// 7 + 4 .5/ , : 4 :&& 4 H E > 4 .05 6+ 73 4 = .5 7 4 05 6+ & " min. A5 3 3&& typ. max. 55 '5 /0 /' .. .. .05 .05 ''' 9'' 9 ./'' Units 7 , 7 E 0. 0A 0A5 095 7 .. .' /9 .5 0 . 05 ) ) ) # /H5 . E H/ 55 AI/ '5 0' 0< J Inverse diode 7) 4 73+ 7? ::; K ) 4 .5/ ,D 73 4 / 7D > 4 05 .05 6+ > 4 .05 6+ > 4 .05 6+ ) 4 .5/ ,D > 4 .05 6+ "L" 4 .5// ,LM 3 73 4 7 0 .9 .. 05 .0 H 9H .I 7 7 E , M+ J FWD 7) 4 73+ 7? ::; K ) 4 .5/ ,D 73 4 / 7 > 4 05 .05 6+ > 4 .05 6+ > 4 .05 6+ ) 4 .5/ ,D > 4 .05 6+ "L" 4 / ,LM 3 73 4 7 0 .9 .. .0 H 9H .I 7 7 E , M+ J Thermal characteristics :> :>1 ! 1" /.0 /0< NLNL- : " //5 NL- 5 5 .'/ Mechanical data ; ; GB 1 O ;' ;5 < 05 GAL 17-02-2004 SCT © by SEMIKRON SKM 195GB124DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 17-02-2004 SCT © by SEMIKRON SKM 195GB124DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 17-02-2004 SCT © by SEMIKRON SKM 195GB124DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm , + 1 I< + 1 IA P 1 I< + 1 I< This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 17-02-2004 SCT © by SEMIKRON