SEMIKRON SKM145GB128DN

SKM 145GB128DN
Absolute Maximum Ratings
Symbol Conditions
IGBT
%
%67
8
:" 13
SEMITRANSTM 2N
SPT IGBT Module
SKM 145GB128DN
)- 12*3 .
/ ;6&%;< = &" / ?
Features
!" # $ %
Typical Applications
& ' (
' )*+,
Values
Units
/)**
/4* 1/5-3
)**
9)*
>* ??? @/-* 1/)-3
&
&
.
>***
/5* 14*3
)**
&
&
//**
&
/5* 14*3
5-* 1)#*3
&
&
//**
&
Inverse diode
%A
%A67
)- 12*3 .
/ %A7
/* B ?B : /-* .
Freewheeling diode
%A
%A67
)- 12*3 .
)- 12*3 ." / %A7
/* B ?B : /-* .
SKM 145GAL128DN
Preliminary Data
)- ." '
Characteristics
Symbol Conditions
IGBT
813
%
1;3
8 " % > &
8 *" " : )- 1/)-3 .
: )- 1/)-3 .
8 /- " : )- 1/)-3 .
13
% /** &" 8 /- " D
' '
8 *" )- " / 7,
[email protected]
?" )- 1/)-3 .
'1
3
'13
#** " % /** &
68
68 4 C" : /)- .
8 9 /- )- ." '
min.
>"-
typ.
max.
Units
-"*"/
/ 1*"43
4 1/)3
#"*"5
/"/- 1/"*-3
/) 1/-3
&
C
/"4 1)"/3
)"5- 1)"--3
)-
A
A
A
4
/
/
13
*"F- 1/3
C
/4*
-*
-4*
-*
//"- 14"-3
G
Inverse diode
A 1;3
%667
H
%A /** &B 8 * B : )- 1/)-3 .
: )- 1/)-3 .
: )- 1/)-3 .
%A /** &B : /)- 1 3 .
'I' 5-** &IJ
8 * ) 1/"23
/"/
4
/5*
/>
)"/">
/5
>"2
C
&
J
G
FWD
A 1;3
%667
H
%A /** &B 8 * " : )- 1/)-3 .
: )- 1/)-3 .
: )- 1/)-3 .
%A /** &B : )- 1/)- 3 .
'I' * &IJ
8 )"/ 1/"23
/"/
4
/5*
/>
)"/">
/5
>"2
C
&
J
G
Thermal characteristics
61:3
61:3N
%8K
%
N'
*"/#*"5#
LIM
LIM
613
'
*"*-
LIM
-
<
<
/#*
Mechanical data
7
7
GB
1
GAL
+ 7#
7-
14-06-2005 SEN
5
)"-
© by SEMIKRON
SKM 145GB128DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-06-2005 SEN
© by SEMIKRON
SKM 145GB128DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
© by SEMIKRON
SKM 145GB128DN
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
N 45
8K
N4>
8&D
N 45
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
14-06-2005 SEN
© by SEMIKRON