SKM 145GB128DN Absolute Maximum Ratings Symbol Conditions IGBT % %67 8 :" 13 SEMITRANSTM 2N SPT IGBT Module SKM 145GB128DN )- 12*3 . / ;6&%;< = &" / ? Features !" # $ % Typical Applications & ' ( ' )*+, Values Units /)** /4* 1/5-3 )** 9)* >* ??? @/-* 1/)-3 & & . >*** /5* 14*3 )** & & //** & /5* 14*3 5-* 1)#*3 & & //** & Inverse diode %A %A67 )- 12*3 . / %A7 /* B ?B : /-* . Freewheeling diode %A %A67 )- 12*3 . )- 12*3 ." / %A7 /* B ?B : /-* . SKM 145GAL128DN Preliminary Data )- ." ' Characteristics Symbol Conditions IGBT 813 % 1;3 8 " % > & 8 *" " : )- 1/)-3 . : )- 1/)-3 . 8 /- " : )- 1/)-3 . 13 % /** &" 8 /- " D ' ' 8 *" )- " / 7, 6E@E ?" )- 1/)-3 . '1 3 '13 #** " % /** & 68 68 4 C" : /)- . 8 9 /- )- ." ' min. >"- typ. max. Units -"*"/ / 1*"43 4 1/)3 #"*"5 /"/- 1/"*-3 /) 1/-3 & C /"4 1)"/3 )"5- 1)"--3 )- A A A 4 / / 13 *"F- 1/3 C /4* -* -4* -* //"- 14"-3 G Inverse diode A 1;3 %667 H %A /** &B 8 * B : )- 1/)-3 . : )- 1/)-3 . : )- 1/)-3 . %A /** &B : /)- 1 3 . 'I' 5-** &IJ 8 * ) 1/"23 /"/ 4 /5* /> )"/"> /5 >"2 C & J G FWD A 1;3 %667 H %A /** &B 8 * " : )- 1/)-3 . : )- 1/)-3 . : )- 1/)-3 . %A /** &B : )- 1/)- 3 . 'I' * &IJ 8 )"/ 1/"23 /"/ 4 /5* /> )"/"> /5 >"2 C & J G Thermal characteristics 61:3 61:3N %8K % N' *"/#*"5# LIM LIM 613 ' *"*- LIM - < < /#* Mechanical data 7 7 GB 1 GAL + 7# 7- 14-06-2005 SEN 5 )"- © by SEMIKRON SKM 145GB128DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN © by SEMIKRON SKM 145GB128DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN © by SEMIKRON SKM 145GB128DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm N 45 8K N4> 8&D N 45 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN © by SEMIKRON