SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 (#> )(, 7 ( 4 -5 )9., 6$ 4 * (?@32%( ? A ( !2; !; 4 *. F CF (> 4 *5. 6$ SKM 400GB125D !2; ( 4 -5 )9., 6$ 4 * !; 4 *. F CF (> 4 *5. 6$ SKM 400GAL125D Characteristics Symbol Conditions IGBT SKM 400GAR125D 7<3), Features ! " # $% &'$ & $ ' ( )*+ , )-. , Typical Applications *-.. :.. )+.., .. = -. B :. CCC D *5. )*-5, 7 % % 7 6$ :... 7 +E. )-., .. % % -E.. % +E. )-., .. % % -E.. % Freewheeling diode ! Units %$ * C ( 4 -5 )9., 6$ 4 * ! Ultra Fast IGBT Modules Values Inverse diode SEMITRANSTM 3 ( 4 -5 6$ /-.01 2 # *.. 01 # 3 / -. 01 $3 7$3)(?, $3 7$3), 7<3 4 7$3 $ 4 *- % 7<3 4 . 7$3 4 7$3 (> 4 -5 )*-5, 6$ (> 4 -5 )*-5, 6$ 7<3 4 *5 7 (> 4 -5 )*-5, 6$ $ ( 4 -5 6$ min. :5 4 +.. % 7<3 4 *5 7 # $ $ $ $3 7<3 4 . 7$3 4 -5 7 4 * ;1 2$$ID33I C B (4 -5 )*-5, 6$ ), ), 7$$ 4 .. 7 $ 4 +.. % 2< 4 2< 4 - H (> 4 *-5 6$ 7<3 4 = *5 7 3 )3, typ. max. Units 55 .*5 *: )*G, 5 .:5 7 % 7 H ++ +95 7 -++ *- +. : * -. ! ! ! .+5 ).5, H G. 5. 5.. +- *G )*9, J Inverse diode 7! 4 73$ K ! 4 +.. %F 7<3 4 . 7F (> 4 -5 )*-5, 6$ (> 4 -5 )*-5, 6$ (> 4 -5 )*-5, 6$ ! 4 +.. %F (> 4 *-5 ) , 6$ L 4 %LM 3 7<3 4 . 7 7)(?, ( 22; - )*9, -5 7 ** + 95 )*:., *+ ):., *++ 7 H % M$ J FWD 7! 4 73$ 7)(?, ( K ! 4 +.. %F 7<3 4 . 7 (> 4 -5 )*-5, 6$ (> 4 -5 )*-5, 6$ (> 4 -5 )*-5, 6$ ! 4 +.. %F (> 4 *-5 ) , 6$ L 4 %LM 3 7<3 4 . 7 22; - )*9, -5 7 7 H % M$ J Thermal characteristics 2)>B, 2)>B,& 2)>B,!& <'( # & !O& ..5 .*-5 .*-5 NLO NLO NLO 2)B, ..+9 NLO 5 5 +-5 Mechanical data GB GAL GAR ; ; 0 ; ; 1 20-09-2005 RAA + -5 © by SEMIKRON SKM 400GB125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 20-09-2005 RAA © by SEMIKRON SKM 400GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic 3 20-09-2005 RAA © by SEMIKRON SKM 400GB125D UL Recognized File no. E 63 532 Dimensions in mm <' $ & 5 <% $ & 5G )P & 5, <%2 $ & 59 )P & 5 , $ & 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 20-09-2005 RAA © by SEMIKRON