GL533 GL533 High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing) ■ Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (TYP. : φ 0.6 mm) (PD3101F and PD3151F) 1.1 (2.3 ) 1 (13.5 ) 5. PSD* Equivalent to peak sensitivity wavelength of detectors Chip position 2.1 ± 0.1 (Refractive index 1.54) 0.3 3. High output type (radiant flux Φ e : TYP. 13mW) 4. Low peak forward voltage type (peak forward voltage V FM : TYP. 2.0V) 4.2 ± 0.1 Transparent epoxy resin Chip top face position 0.07 2. High positional accuracy of optical axis (accuracy : ± 0.1 mm) (Unit : mm) 2 - φ 0.45 ± 0.1 (peak emission wavelength : TYP. 940 nm) 2.5 ± 0.3(❈ ) PSD * : Position Sensitive Device φ 5.4 1 ˚ 45 ■ Applications 1 Anode 2 Cathode 2 1. 0 1. 0 1. Cameras 2 ■ Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperature Storage temperature *2 Soldering temperature Symbol IF I FM VR P Topr Tstg Tsol (Ta=25˚C) Rating 80 1 6 120 - 25 to +100 - 30 to +100 260 Unit mA A V mW ˚C ˚C ˚C 1.3mm ❈ Dimension at lead root * ( ) : Reference dimensions Soldering area *1 Pulse width <=100 µ s, Duty ratio=0.01 *2 For MAX. 3 seconds at the position of 1.3 mm from the bottom surface of resin “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GL533 ■ Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength Half intensity wavelength Terminal capacitance Response capacitance (Ta=25 ˚C) Symbol VF V FM IR Φe λp ∆λ Ct fc Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 50mA I FM = 0.5A V R = 3V I F = 50mA I F = 20mA I F = 20mA V R = 0, f = 1MHz MIN. 8 - TYP. 1.3 2.0 13 940 60 70 300 Fig. 2 Peak Forward Current vs. Duty Ratio 100 Pulse width <=100 µs 5000 Ta = 25˚C (mA) FM (mA) Peak forward current I F Forward current I MAX. 1.6 2.9 10 18 - 50 0 - 25 0 25 50 75 100 Ambient temperature T a (˚C) ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 1000 500 100 50 10 10 -4 10 -3 10 -2 Duty ratio 10 - 1 10˚ Unit V V µA mW nm nm pF kHz