PD3151F PD3151F Position Sensitive Detector with Location Hole (PSD * ) ■ Features ■ Outline Dimensions 2. Thin, compact package 5 6 1.67 0.8 (Unit : mm) 4 Detector face 4.0 1.95 1.5 1. Easy high accuracy positioning owing to location hole Detecting portion pattern positional accuracy : ± 0.1 mm R0.4 6.0 ■ Applications 3.0 1. Cameras 7.0 7.9 3. Visible light cut-off type 1.95 1.5 * PSD: Position Sensitive Detector φ 0.9 0.15 1.905 1.905 3 0.97 2 5.0 1.5 0.8 1.5 1 Shape of detector portion Chip positional accuracy : ± 0.1 mm, Rotational deviation : ± 2 ˚ 4 1 2 3 5 6 ■ Absolute Maximum Ratings *1 Parameter Reverse voltage Operating temperature Storage temperature Soldering temperature Symbol VR T opr T stg T sol 1 2 3 4 5 6 Anode A Cathode Cathode Anode B Cathode Cathode (Ta=25˚C) Rating 30 - 25 to+ 85 - 40 to+ 85 + 260 Unit V ˚C ˚C ˚C Soldering area *1 For MAX. 3 seconds in the soldering area “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PD3151F ■ Electro-optical Characteristics (Ta=25 ˚C) Parameter Reverse voltage Dark current Collector current Terminal capacitance Peak sensitivity wavelength Sensitivity wavelength range Response time Resistance between electrodes Error of position detection Sensitivity Forward voltage Symbol VR Id *2 IL Ct λP λ *3 tr , t f Rie *4 R VF Conditions I R = 10µ A V R = 1V V R = 1V, E V = 1000 lx V R = 1V, f = 10kHz - MIN. 30 6 770 320 - V R = 1V, R L = 1kΩ V R = 1V, V a = 0.5V I F = 1mA TYP. 10 10 940 5 400 0.5 - MAX. 1.5 30 1130 30 480 ± 25 1.0 Unit V nA µA pF nm nm µs kΩ µm A/W V *2 I L= I1+ I2 where, I 1 and I 2 are collector current of A1 and A2 respectively. Ev : Illuminance by CIE standard light source A (tungsten lamp) *3 Test circuit for response time is shown below. Input Input RL = 1kΩ Laser diode λ = 830nm VR VR 90% Output 10% tr tf *4 75% area from detecting portion center to the edge of detecting portion Definition of error of position detection : Error of position detection of each incident light position is defined by the following formula, if electrical center position is I 1 = I 2 . Error of position detection ( µ m ) = L 2 x I1 - I2 I1 + I2 - Incident light position ( µm) L : Length of light detector surface =1.5mm Fig. 2 Dark Current vs. Ambient Temperature Fig. 1 Spectral Sensitivity 120 10- 6 VR=1V 10- 7 10- 8 Dark current (I d A) Relative sensitivity (%) 100 80 60 40 10- 9 10- 10 10- 11 10- 12 20 0 600 10- 13 700 800 900 1000 Wavelength λ (nm) 1100 1200 10- 14 - 25 0 25 50 75 Ambient temperature Ta (˚C) 100 PD3151F Fig. 3 Dark Current vs. Reverse Voltage Fig. 4 Terminal Capacitance vs. Reverse Voltage 20 Ta=25˚C f=10kHz Ta=25˚C Terminal capacitance C t ( pF ) Dark current I d (A) 10 -8 10- 9 10 -10 10 -11 0.01 0.1 1 10 15 10 5 0 10 100 1 1 10 1 10 2 Reverse voltage V R (V) Reverse voltage V R (V) Fig. 6 Collector Current vs. Illuminance Fig. 5 Relative Output vs. Ambient Temperature 100 115 VR=1V Ta=25˚C ( µ A) 10 L 105 Collector current I Relative output (%) 110 100 95 1 0.1 90 85 - 25 0 25 50 75 100 Ambient temperature Ta (˚C) ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 0.01 1 10 10 2 Illuminance E V (lx) 10 3 10 4