GP1S53V/GP1S58V GP1S53V/GP1S58V Compact Photointerrupter ■ Features ■ Applications 1. Compact type 2. High sensing accuracy ( Slit width : 0.5mm ) 3. PWB direct mounting type 4. With positioning pin ( GP1S58V ) 1. OA equipment, such as FDDs, printers, facsimiles 2. VCRs 3. Optoelectronic switches ■ Outline Dimensions ( Unit : mm ) GP1S53V GP1S58V 4 *Unspecified tolerances shall be as follows ; Dimensions(d) Tolerance d<= 6.0 ± 0.1 6.0 < d<=18.0 ± 0.2 * ( ) : Reference dimensions 1 3 2 Parameter Forward current *1 Peak forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Operating temperature Storage temperature *2 Soldering temperature 10 2-0.7 7.5 A’ B’ *Unspecified tolerances shall be as follows; Dimensions(d) Tolerance d<= 6.0 ± 0.1 6.0 < d<=18.0 ± 0.2 * ( ) : Reference dimensions 0.4 +- 0.3 0.1 (10.3) 4 6.5 1 2 2 - φ 0.7 3 2.5 ( Ta = 25˚C ) Symbol Rating IF 50 I FM 1 6 VR P 75 VCEO 35 VECO 6 20 IC PC 75 - 25 to + 85 T opr - 40 to + 100 T stg T sol 260 Unit mA A V mW V V mA mW ˚C ˚C ˚C *1 Pulse width <=100 µ s, Duty ratio= 0.01 *2 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” 0.5 1.5 3.5 1.5 A B (2.54) 4 ■ Absolute Maximum Ratings C1 0.45 +- 0.3 0.1 0.4 +- 0.3 0.1 (10.3) (2.54) B-B’ section A-A’ section 0.5 0.5 MIN 10 10 7.5 A’ B’ (2.5) ( Sensor center ) A B MIN 10 0.45 +- 0.3 0.1 3 Collector 4 Emitter B-B ’ section 3.5 C1 1 1 Anode 2 Cathode A-A ’ section 0.5 0.2 0.1 (2.5) ( Sensor center ) 1 3 Collector 4 Emitter 1 Anode 2 Cathode 5.0+- 2 2.0 S53 4 3 5.2 2 S58 3 13.7 +- 0.3 0.3 Internal connection diagram 5.0+- 0.2 0.1 5.2 13.7 +- 0.3 0.3 Internal connection diagram GP1S53V/GP1S58V ■ Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Collector dark current Collector Current Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfer characteristics ( Ta = 25˚C ) Symbol VF V FM IR I CEO Ic V CE(sat) tr tf Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA I FM = 0.5A V R = 3V V CE = 20V I F = 20mA, V CE = 5V I F = 40mA, I C = 0.2mA VCE = 2V, I C = 2mA R L = 100 Ω MAX. 1.4 4 10 100 1.5 0.4 15 20 Collector power dissipation P C ( mW ) 120 50 Forward current I F ( mA ) TYP. 1.25 3 1 3 4 Fig. 2 Collector Power Dissipation vs. Ambient Temperature 60 40 30 20 10 0 - 25 0 25 50 75 85 100 80 75 60 40 20 0 - 25 100 0 Ambient temperature T a ( ˚C ) 50 75 85 100 Fig. 4 Forward Current vs. Forward Voltage 500 Pulse width <= 100 µ s T a = 25˚C 2000 25 Ambient temperature T a ( ˚C ) Fig. 3 Peak Forward Current vs. Duty Ratio T a = 75˚C 200 Forward current I F ( mA ) Peak forward current I FM ( mA ) MIN. 0.5 - 1000 500 200 100 25˚C 0˚C - 25˚C 50˚C 100 50 20 10 5 50 2 1 20 5 10 - 2 2 5 10 - 1 Duty ratio 2 5 100 0 0.5 1 1.5 2 2.5 Forward voltage V F ( V ) 3 3.5 Unit V V µA nA mA V µs µs GP1S53V/GP1S58V Fig. 5 Collector Current vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 5 5 T a = 25˚C V CE = 5V T a = 25˚C 4 Collector current I C ( mA ) Collector current I C ( mA ) 4 3 2 1 0 0 10 20 30 Forward current I F 40 30mA 2 20mA 1 10mA 0 1 ( mA ) 4 5 6 7 8 9 10 0.3 Collector-emitter saturation voltage V CE(sat) ( V ) I F = 20mA V CE = 5V 1.5 1.0 0.5 0 - 25 0 25 50 75 0.25 I F = 40mA I C= 0.2mA 0.2 0.15 0.1 0.05 0 - 25 100 0 Ambient temperature T a ( ˚C ) 25 50 75 100 Ambient temperature T a ( ˚C ) Fig. 9 Response Time vs. Load Resistance 50 3 Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature 2.0 100 2 Collector-emitter voltage V CE ( V ) 3.0 Collector current I C ( mA ) 40mA 3 0 50 Fig. 7 Collector Current vs. Ambient Temperature 2.5 I F = 50mA Test Circuit for Response Time V CE = 2V I C= 2mA T a = 25˚C Response time ( µ s ) 20 Input tf 5 2 td RL Output Output 10% 90% td ts tr ts 0.2 0.1 0.01 0.02 RD tr 1 0.5 Input VCC 10 0.05 0.1 0.2 0.5 1 2 Load resistance RL ( k Ω ) 5 10 tf GP1S53V/GP1S58V Fig.10 Frequency Response Fig.11 Collector Dark Current vs. Ambient Temperature 5 Collector dark current I CEO ( A ) 0 Voltage gain Av ( dB ) 10 - 6 V CE = 2V I C= 2mA T a = 25˚C -5 R L = 10kΩ - 10 100Ω 1kΩ - 15 V CE = 20V 2 10 - 7 5 2 10 - 8 5 2 10 - 9 5 2 10 - 10 - 25 - 20 5 5 104 2 5 105 2 5 106 75 100 Fig.13 Relative Collector Current vs. Shield Distance ( 2 ) I F = 20mA, VCE = 5V T a = 25˚C L Shield 50 + 0 ( Detector center ) 0 - 2.5 - 2.0 - 1.5 - 1 - 0.5 0 0.5 I F = 20mA, V CE = 5V T a = 25˚C Shield - L 100 Detector Relative collector current ( % ) Relative collector current ( % ) 50 Ambient temperature T a ( ˚C ) Fig.12 Relative Collector Current vs. Shield Distance ( 1 ) 100 25 0 Frequency f ( Hz ) 0 + Detector 50 0 1 1.5 2 2.5 - 2 Shield distance L ( mm ) ■ Precautions for Use ( 1 ) In case of cleaning, use only the following type of cleaning solvent. Ethyl alcohol, methyl alcohol, Isopropyl alcohol ( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use” . - 1 0 1 Shield distance L ( mm ) 2 ( Detector center ) 2 103 2