SHARP GP1S58V

GP1S53V/GP1S58V
GP1S53V/GP1S58V
Compact Photointerrupter
■ Features
■ Applications
1. Compact type
2. High sensing accuracy ( Slit width : 0.5mm )
3. PWB direct mounting type
4. With positioning pin ( GP1S58V )
1. OA equipment, such as FDDs, printers,
facsimiles
2. VCRs
3. Optoelectronic switches
■ Outline Dimensions
( Unit : mm )
GP1S53V
GP1S58V
4
*Unspecified tolerances
shall be as follows ;
Dimensions(d) Tolerance
d<= 6.0
± 0.1
6.0 < d<=18.0
± 0.2
* ( ) : Reference dimensions
1
3
2
Parameter
Forward current
*1
Peak forward current
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*2
Soldering temperature
10
2-0.7
7.5
A’ B’
*Unspecified tolerances
shall be as follows;
Dimensions(d) Tolerance
d<= 6.0
± 0.1
6.0 < d<=18.0 ± 0.2
* ( ) : Reference dimensions
0.4 +- 0.3
0.1
(10.3)
4
6.5
1
2
2 - φ 0.7
3
2.5
( Ta = 25˚C )
Symbol
Rating
IF
50
I FM
1
6
VR
P
75
VCEO
35
VECO
6
20
IC
PC
75
- 25 to + 85
T opr
- 40 to + 100
T stg
T sol
260
Unit
mA
A
V
mW
V
V
mA
mW
˚C
˚C
˚C
*1 Pulse width <=100 µ s, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
0.5
1.5
3.5
1.5
A B
(2.54)
4
■ Absolute Maximum Ratings
C1
0.45 +- 0.3
0.1
0.4 +- 0.3
0.1
(10.3)
(2.54)
B-B’ section
A-A’ section
0.5
0.5
MIN 10
10
7.5
A’ B’
(2.5)
( Sensor center )
A B
MIN 10
0.45 +- 0.3
0.1
3 Collector
4 Emitter
B-B ’ section
3.5
C1
1
1 Anode
2 Cathode
A-A ’ section
0.5
0.2
0.1
(2.5)
( Sensor center )
1
3 Collector
4 Emitter
1 Anode
2 Cathode
5.0+-
2
2.0
S53
4
3
5.2
2
S58
3
13.7 +- 0.3
0.3
Internal connection
diagram
5.0+- 0.2
0.1
5.2
13.7 +- 0.3
0.3
Internal connection
diagram
GP1S53V/GP1S58V
■ Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Input
Output
Transfer
characteristics
( Ta = 25˚C )
Symbol
VF
V FM
IR
I CEO
Ic
V CE(sat)
tr
tf
Fig. 1 Forward Current vs. Ambient
Temperature
Conditions
I F = 20mA
I FM = 0.5A
V R = 3V
V CE = 20V
I F = 20mA, V CE = 5V
I F = 40mA, I C = 0.2mA
VCE = 2V, I C = 2mA
R L = 100 Ω
MAX.
1.4
4
10
100
1.5
0.4
15
20
Collector power dissipation P C ( mW )
120
50
Forward current I F ( mA )
TYP.
1.25
3
1
3
4
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
60
40
30
20
10
0
- 25
0
25
50
75 85
100
80
75
60
40
20
0
- 25
100
0
Ambient temperature T a ( ˚C )
50
75 85
100
Fig. 4 Forward Current vs.
Forward Voltage
500
Pulse width <= 100 µ s
T a = 25˚C
2000
25
Ambient temperature T a ( ˚C )
Fig. 3 Peak Forward Current vs.
Duty Ratio
T a = 75˚C
200
Forward current I F ( mA )
Peak forward current I FM ( mA )
MIN.
0.5
-
1000
500
200
100
25˚C
0˚C
- 25˚C
50˚C
100
50
20
10
5
50
2
1
20
5
10 - 2
2
5
10 - 1
Duty ratio
2
5
100
0
0.5
1
1.5
2
2.5
Forward voltage V F ( V )
3
3.5
Unit
V
V
µA
nA
mA
V
µs
µs
GP1S53V/GP1S58V
Fig. 5 Collector Current vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
5
5
T a = 25˚C
V CE = 5V
T a = 25˚C
4
Collector current I
C
( mA )
Collector current I C ( mA )
4
3
2
1
0
0
10
20
30
Forward current I
F
40
30mA
2
20mA
1
10mA
0
1
( mA )
4
5
6
7
8
9
10
0.3
Collector-emitter saturation voltage
V CE(sat) ( V )
I F = 20mA
V CE = 5V
1.5
1.0
0.5
0
- 25
0
25
50
75
0.25
I F = 40mA
I C= 0.2mA
0.2
0.15
0.1
0.05
0
- 25
100
0
Ambient temperature T a ( ˚C )
25
50
75
100
Ambient temperature T a ( ˚C )
Fig. 9 Response Time vs.
Load Resistance
50
3
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
2.0
100
2
Collector-emitter voltage V CE ( V )
3.0
Collector current I C ( mA )
40mA
3
0
50
Fig. 7 Collector Current vs.
Ambient Temperature
2.5
I F = 50mA
Test Circuit for Response Time
V CE = 2V
I C= 2mA
T a = 25˚C
Response time ( µ s )
20
Input
tf
5
2
td
RL
Output
Output
10%
90%
td
ts
tr
ts
0.2
0.1
0.01 0.02
RD
tr
1
0.5
Input
VCC
10
0.05 0.1 0.2
0.5
1
2
Load resistance RL ( k Ω )
5
10
tf
GP1S53V/GP1S58V
Fig.10 Frequency Response
Fig.11 Collector Dark Current vs.
Ambient Temperature
5
Collector dark current I CEO ( A )
0
Voltage gain Av ( dB )
10 - 6
V CE = 2V
I C= 2mA
T a = 25˚C
-5
R L = 10kΩ
- 10
100Ω
1kΩ
- 15
V CE = 20V
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
2
10 - 10
- 25
- 20
5
5
104 2
5
105 2
5
106
75
100
Fig.13 Relative Collector Current vs.
Shield Distance ( 2 )
I F = 20mA, VCE = 5V
T a = 25˚C
L
Shield
50
+
0
( Detector center )
0
- 2.5 - 2.0 - 1.5 - 1 - 0.5 0
0.5
I F = 20mA, V CE = 5V
T a = 25˚C
Shield
-
L
100
Detector
Relative collector current ( % )
Relative collector current ( % )
50
Ambient temperature T a ( ˚C )
Fig.12 Relative Collector Current vs.
Shield Distance ( 1 )
100
25
0
Frequency f ( Hz )
0
+
Detector
50
0
1
1.5
2
2.5
- 2
Shield distance L ( mm )
■ Precautions for Use
( 1 ) In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, Isopropyl alcohol
( 2 ) As for other general cautions, refer to the chapter “ Precautions for Use” .
- 1
0
1
Shield distance L ( mm )
2
( Detector center )
2
103 2