SHARP GP1S39

GP1S39
GP1S39
Subminiature, Double-phase
Output, Wide Gap
Photointerrupter
■ Features
■ Outline Dimensions
1. Ultra-compact package
2. PWB mounting type
3. Double-phase phototransistor output type
for detecting of rotation direction and count
4. Wide gap between light emitter and
detector: 1.5mm
5. Slit width: 0.8mm
6. Detecting pitch: 0.6mm
( Unit : mm )
Internal connection diagram
PT1
1
4
PT2
2
3
4.5
Anode
Cathode
Emitter2
Emitter1
Collector
4.0
(C0.4)
1.5
1.5
B
A
(0.7)
4.7
3.5
(0.7)
1.5
Center of light path
1
2
3
4
5
5
A'
0.15 +- 0.2
0.1
1. Mouses
2. Cameras
Rest of gate
(2)
❈
3.14
5
0.4
❈ 1.27
1
B-B' section
(1.0 )
4
(0.37)
3
Input
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
( Ta = 25˚C )
Symbol
IF
VR
P
V CE1O
V CE2O
V E 1CO
V E 2CO
Rating
50
6
75
Unit
mA
V
mW
35
V
6
V
IC
PC
P tot
T opr
T stg
Tsol
20
75
100
- 25 to + 85
- 40 to + 100
260
mA
mW
mW
˚C
˚C
˚C
❈ 1.27
A-A' section
Slit width of
emitter side
(0.8)
(0.37)
2
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
* Internal elements are appeared because of thin external mold
resin marked
1mm or more
■ Absolute Maximum Ratings
4.0MIN.
(C0.3)
B'
■ Applications
Soldering area
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S39
■ Electro-optical Characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Reverse current
Collector dark current
Collector current
Collector current ratio
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Input
Output
Transfer
characteristics
Symbol
VF
IR
I CEO
IC
I C1 /I C2
V CE(sat)
tr
tf
MIN.
130
0.67
-
TYP.
1.2
50
50
MAX.
1.4
10
100
520
1.5
0.4
150
150
Fig. 2 Power Dissipation vs.
Ambient Temperature
60
120
50
100
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs. Ambient
Temperature
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, I F = 4mA
V CE = 5V, I F = 4mA
I F = 8mA, I C = 50 µ A
V CE = 5V, I C = 100 µ A
R L = 1 000 Ω
40
30
20
10
P tot
P, P c
80
60
40
20
0
- 25
0
25
75 85
50
0
- 25
100
Ambient temperature T a ( ˚C )
0
25
50
75 85
100
Ambient temperature T a ( ˚C )
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs.
Forward Current
500
Collector current I C ( mA )
Forward current I F ( mA )
50˚C
100
VCE = 5V
T a = 25˚C
1.0
25˚C
0˚C
- 25˚C
T a = 75˚C
200
50
20
10
5
0.8
0.6
0.4
0.2
2
1
0
0
0.5
1
1.5
2
Forward voltage VF ( V )
2.5
3
0
5
Forward current I F ( mA )
10
Unit
V
µA
nA
µA
V
µs
µs
GP1S39
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Fig. 6 Collector Current vs.
Ambient Temperature
400
T a = 25˚C
VCE=5V
IF=4mA
4.0
I F = 50mA
40mA
3.0
30mA
2.0
300
Collector current I C (µ A)
Collector current I C ( mA )
5.0
20mA
200
100
10mA
1.0
4mA
0
0
2
4
6
8
- 25
10
0
Collector-emitter voltage V CE ( V )
50
75 85
Fig. 8 Collector Dark Current vs.
Ambient Temperature
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
10 - 6
0.16
I F = 8mA
I C= 50 m A
V CE = 20V
5
0.14
Collector dark current I CEO (A)
Collector-emitter saturation voltage VCE( sat) (V )
25
Ambient temperature T a ( ˚C )
0.12
0.10
0.08
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
0.06
2
10
- 25
0
25
50
75
85
- 10
0
25
Ambient temperature Ta ( ˚C )
50
75
100
Ambient temperature T a ( ˚C )
Fig. 9 Response Time vs.
Load Resistance
500
Response time ( ms )
V CE = 5V
I C = 100mA
T a = 25˚C
tr
Test Circuit for Response Time
tf
100
td
ts
10
Input
VCC
Input
RD
RL
Output
Output
10%
90%
td
ts
tr
1
0.5
1
10
Load resistance RL ( kΩ )
50
tf
GP1S39
90
Shield
70
I F = 4mA
V CE = 5V
T a = 25˚C
50
40
30
80
I F = 4mA
V CE = 5V
T a = 25˚C
70
60
50
40
30
20
10
10
2
3
4
Shield distance L ( mm )
●
90
20
1
Please refer to the chapter “Precautions for Use”.
L= 0
100
L
80
60
-
Shield
+
+
L= 0
L
-
100
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
Relative collector current ( % )
Relative collector current ( % )
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
0.5
1
1.5
Shield distance L ( mm )
2