GP1S33 GP1S33 Subminiature, Reflow Soldering Type Photointerrupter ■ Features ■ Outline Dimensions 1. Ultra-compact package 2. PWB mounting type 3. High sensing accuracy ( Slit width : 0.3mm ) 4. Applying to reflow soldering Preheat : 160˚C within 120 seconds Reflow : 200˚C within 60 seconds ( Peak : 240˚C ) ( Unit : mm ) Internal connection diagram 4 3 1 2 1 Anode 2 Collector 5.0 1.5 2.0 4.2 (0.3) Slit width Center of light path (C0.8) (C0.3) + 4 - 0.15 - 0.2 0.1 1. Floppy disk drives 2. Cameras 5.2 3.5 (1.0) ■ Applications 3 Emitter 4 Cathode 1.0± 0.5 4 - 0.5 3.8 1 Rest of gate ❈2.5 2 * Tolerance :± 0.2mm * Burr's dimensions : 0.15MAX. * Rest of gate : 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. 4 ■ Absolute Maximum Ratings Output ( Ta = 25˚C ) Symbol IF VR P VCEO VECO IC PC P tot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 0.5mm or more Input Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 3 Soldering area *1 For 3 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S33 ■ Electro-optical Chara ( Ta = 25˚C ) Parameter Forward voltage Reverse current Collector dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfer characteristics Symbol VF IR I CEO IC V CE(sat) tr tf 60 120 50 100 40 30 20 10 TYP. 1.2 50 50 MAX. 1.4 10 100 600 0.4 150 150 Unit V µA nA µA V µs µs P tot P, P 80 c 60 40 20 0 - 25 0 25 50 75 85 0 - 25 100 0 Ambient temperature T a ( ˚C ) 25 50 75 85 100 Ambient temperature T a ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 1.0 500 50˚C 100 VCE = 5V T a = 25˚C 25˚C 0˚C - 25˚C 0.8 Collector current I C ( mA ) T a = 75˚C 200 Forward current I F ( mA ) MIN. 100 - Fig. 2 Power Dissipation vs. Ambient Temperature Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA V R = 3V V CE = 20V V CE = 5V, I F = 5mA I F = 10mA, I C = 40 µ A V CE = 5V, I C = 100 µ A R L = 1 000 Ω 50 20 10 5 0.6 0.4 0.2 2 1 0 0.5 1 1.5 2 2.5 Forward voltage V F ( V ) 3 0 0 4 8 12 16 Forward current I F ( mA ) 20 GP1S33 Fig. 5 Collector Current vs. Collector-emitter Voltage Fig. 6 Collector Current vs. Ambient Temperature 0.25 T a = 25˚C I F = 5mA 3.0 VCE = 5V Collector current I Collector current I C ( mA ) I F = 50mA 2.4 C ( mA ) 0.20 40mA 1.8 30mA 1.2 20mA 0.6 0.15 0.10 0.05 10mA 5mA 0 0 5 Collector-emitter voltage VCE ( V) 0 - 25 10 Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 25 50 75 Ambient temperature T a ( ˚C ) 100 Fig. 8 Collector Dark Current vs. Ambient Temperature 10 - 6 0.14 I F = 10mA V CE = 20V 5 I C = 40 µ A Collector dark current I CEO ( A) Collector-emitter saturation voltage VCE ( sat ) ( V) 0 0.12 0.10 0.08 0.06 2 10 - 7 5 2 10 - 8 5 2 10 - 9 5 2 0.04 - 25 10 - 10 0 25 50 75 Ambient temperature T a ( ˚C ) 100 0 Fig. 9 Response Time vs. Load Resistance 25 50 75 Ambient temperature T a ( ˚C ) 100 Test Circuit for Response Time 500 VCE = 5V I C = 100 µ A T a = 25˚C 200 Response time ( µ s ) 100 50 20 2 1 RD RL Output tf Output 10% 90% tr td 10 5 Input VCC Input td ts 0.5 0.3 0.05 0.1 0.2 ts tr 0.5 1 2 5 10 20 Load resistance R L ( k Ω ) 50 100 tf Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) I F = 5mA VCE = 5V T a = 25˚C I F = 5mA VCE = 5V T a = 25˚C Shield 60 - + 0 40 ( Detector center ) 20 60 0 + Detector 40 20 0 0 - 2 - 1 0 1 2 Shield distance L ( mm ) ● Shield 80 L 80 Relative collector current ( % ) 100 L Detector Relative collector current ( % ) 100 Please refer to the chapter “ Precautions for Use ” . - 2 - 1 0 1 Shield distance L ( mm ) 2 ( Detector center ) GP1S33