SHARP GP1S28

GP1S28
GP1S28
Subminiature Photointerrupter
■ Features
■ Outline Dimensions
1. Ultra-compact
2. PWB mounting type package
3. High sensing accuracy ( Slit width 0.3mm )
4. With mounting boss
( Unit : mm )
Internal connection diagram
3
4
4.0
1. Cameras
2. Floppy disk drives
+ 0.05
- 0.15
3 Emitter
4 Collector
4.0
(C0.8)
1.41.2
0.7
3.0
2
* Tolerance :± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
( Ta = 25˚C )
Symbol
IF
VR
P
V CEO
V ECO
IC
PC
P tot
T opr
T stg
T sol
4.0MIN.
❈
2.54
1
3
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
5.1
4.0 ± 0.3
( Light path )
4.0
2.5
φ 0.8 (1.0)
(C0.3)
Rest of gate
()
4 - 0.15 2
4 - 0.4
4
■ Absolute Maximum Ratings
(Detector)
(0.3)
Slit width
Center of light path
❈
2.85
Output
1
1 Anode
2 Cathode
■ Applications
Input
2
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
1mm or more
*1 For 5 seconds
Soldering area
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S28
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Symbol
VF
IR
I CEO
Ic
V CE(sat)
tr
tf
V CE =5V, R L =1k Ω
I C=100 µ A
60
120
50
100
40
30
20
10
MAX.
1.4
10
1 x 10 - 7
1300
0.4
150
150
P tot
P, P c
80
60
40
20
0
- 25
0
25
50
75 85
0
- 25
100
0
Ambient temperature T a ( ˚C )
25
75 85
50
100
Ambient temperature T a ( ˚C )
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs. Forward Current
2.0
500
T a = 75˚C
50˚C
100
V CE = 5V
T a = 25˚C
1.8
25˚C
0˚C
- 25˚C
Collector current I C ( mA )
200
Forward current I F ( mA )
TYP.
1.2
50
50
Fig. 2 Power Dissipation vs.
Ambient Temperature
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs. Ambient
Temperature
MIN.
100
-
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, I F = 5mA
I F = 10mA, I C = 50 µ A
50
20
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2
0.2
1
0
0
0.5
1
1.5
2
2.5
Forward voltage V F ( V )
3
3.5
0
1
2
3
4
5
6
7
Forward current I F ( mA )
8
9
10
Unit
V
µA
A
µA
V
µs
µs
GP1S28
Fig. 5 Collector Current vs. Collectoremitter Voltage
Fig. 6 Collector Current vs.
Ambient Temperature
11
0.6
V CE = 5V
I F = 5mA
P C(MAX.)
10
0.5
8
I F = 50mA
7
Collector current I C ( mA )
Collector current I C ( mA )
9
40mA
6
30mA
5
4
20mA
3
2
10mA
1
5mA
0
0
1
2
3
4
5
6
7
8
0.4
0.3
0.2
0.1
9
0
-25
10
0
Collector-emitter voltage V CE ( V )
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
500
75
100
V CE = 5V
I C = 100 µ A
T a = 25˚C
I F = 10mA
200
I C = 50 µ A
100
0.12
Response time ( µ s )
Collector-emitter saturation voltage
V CE(sat) (V)
50
Fig. 8 Response Time vs. Load Resistance
0.16
0.14
25
Ambient temperature T a ( ˚C )
0.10
0.08
0.06
0.04
50
tf
20
tr
td
10
5
2
ts
1
0.02
0
- 25
0
25
50
75
5
0.3
0.05 0.1 0.2
100
0.5
1
2
5
10 20
50 100
Load resistance R L ( k Ω )
Ambient temperature T a ( ˚C )
Fig. 9 Collector Dark Current vs. Ambient
Temperature
10
-6
V CE = 20V
Input
VCC
Input
RD
RL
Output
Output
10%
90%
td
ts
tr
tf
Collector dark current I CEO ( A )
5
Test Circuit for Response Time
2
10
-7
5
2
10
-8
5
2
10
-9
5
2
10
- 10
0
25
50
75
Ambient temperature T a ( ˚C )
100
GP1S28
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
100
L
Shield
+
0
( Detector center )
50
0
-2
Detector
-1
0
1
2
3
Shield distance L ( mm )
●
Please refer to the chapter “ Precautions for Use”.
I F = 5mA
V CE = 5V
T a = 25˚C
100
Shield
L
0
+
50
( Detector center )
I F = 5mA
V CE = 5V
T a = 25˚C
Relative collector current ( % )
Relative collector current ( % )
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
Detector
0
- 2
- 1
0
1
Shield distance L ( mm )
2
3