GP1S28 GP1S28 Subminiature Photointerrupter ■ Features ■ Outline Dimensions 1. Ultra-compact 2. PWB mounting type package 3. High sensing accuracy ( Slit width 0.3mm ) 4. With mounting boss ( Unit : mm ) Internal connection diagram 3 4 4.0 1. Cameras 2. Floppy disk drives + 0.05 - 0.15 3 Emitter 4 Collector 4.0 (C0.8) 1.41.2 0.7 3.0 2 * Tolerance :± 0.2mm * Burr's dimensions : 0.15MAX. * Rest of gate: 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. ( Ta = 25˚C ) Symbol IF VR P V CEO V ECO IC PC P tot T opr T stg T sol 4.0MIN. ❈ 2.54 1 3 Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 5.1 4.0 ± 0.3 ( Light path ) 4.0 2.5 φ 0.8 (1.0) (C0.3) Rest of gate () 4 - 0.15 2 4 - 0.4 4 ■ Absolute Maximum Ratings (Detector) (0.3) Slit width Center of light path ❈ 2.85 Output 1 1 Anode 2 Cathode ■ Applications Input 2 Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more *1 For 5 seconds Soldering area “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S28 ■ Electro-optical Characteristics Input Output Transfer characteristics ( Ta = 25˚C ) Parameter Forward voltage Reverse current Collector dark current Collector Current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR I CEO Ic V CE(sat) tr tf V CE =5V, R L =1k Ω I C=100 µ A 60 120 50 100 40 30 20 10 MAX. 1.4 10 1 x 10 - 7 1300 0.4 150 150 P tot P, P c 80 60 40 20 0 - 25 0 25 50 75 85 0 - 25 100 0 Ambient temperature T a ( ˚C ) 25 75 85 50 100 Ambient temperature T a ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 2.0 500 T a = 75˚C 50˚C 100 V CE = 5V T a = 25˚C 1.8 25˚C 0˚C - 25˚C Collector current I C ( mA ) 200 Forward current I F ( mA ) TYP. 1.2 50 50 Fig. 2 Power Dissipation vs. Ambient Temperature Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature MIN. 100 - Conditions I F = 20mA V R = 3V V CE = 20V V CE = 5V, I F = 5mA I F = 10mA, I C = 50 µ A 50 20 10 5 1.6 1.4 1.2 1.0 0.8 0.6 0.4 2 0.2 1 0 0 0.5 1 1.5 2 2.5 Forward voltage V F ( V ) 3 3.5 0 1 2 3 4 5 6 7 Forward current I F ( mA ) 8 9 10 Unit V µA A µA V µs µs GP1S28 Fig. 5 Collector Current vs. Collectoremitter Voltage Fig. 6 Collector Current vs. Ambient Temperature 11 0.6 V CE = 5V I F = 5mA P C(MAX.) 10 0.5 8 I F = 50mA 7 Collector current I C ( mA ) Collector current I C ( mA ) 9 40mA 6 30mA 5 4 20mA 3 2 10mA 1 5mA 0 0 1 2 3 4 5 6 7 8 0.4 0.3 0.2 0.1 9 0 -25 10 0 Collector-emitter voltage V CE ( V ) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 500 75 100 V CE = 5V I C = 100 µ A T a = 25˚C I F = 10mA 200 I C = 50 µ A 100 0.12 Response time ( µ s ) Collector-emitter saturation voltage V CE(sat) (V) 50 Fig. 8 Response Time vs. Load Resistance 0.16 0.14 25 Ambient temperature T a ( ˚C ) 0.10 0.08 0.06 0.04 50 tf 20 tr td 10 5 2 ts 1 0.02 0 - 25 0 25 50 75 5 0.3 0.05 0.1 0.2 100 0.5 1 2 5 10 20 50 100 Load resistance R L ( k Ω ) Ambient temperature T a ( ˚C ) Fig. 9 Collector Dark Current vs. Ambient Temperature 10 -6 V CE = 20V Input VCC Input RD RL Output Output 10% 90% td ts tr tf Collector dark current I CEO ( A ) 5 Test Circuit for Response Time 2 10 -7 5 2 10 -8 5 2 10 -9 5 2 10 - 10 0 25 50 75 Ambient temperature T a ( ˚C ) 100 GP1S28 Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) 100 L Shield + 0 ( Detector center ) 50 0 -2 Detector -1 0 1 2 3 Shield distance L ( mm ) ● Please refer to the chapter “ Precautions for Use”. I F = 5mA V CE = 5V T a = 25˚C 100 Shield L 0 + 50 ( Detector center ) I F = 5mA V CE = 5V T a = 25˚C Relative collector current ( % ) Relative collector current ( % ) Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) Detector 0 - 2 - 1 0 1 Shield distance L ( mm ) 2 3