TEC N 940525 Hologram Laser LT0H12M Hologram Laser(1 beam) for Magneto-Optical disk ■ Features (1) Maximum optical output: 35mW (2) Pickups reduced in size and weight on request (3) The housing of pickups shifted from aluminum die-cast to formed resin on request (reducing the weight to 1/3) ■ Outline Dimensions φ 9.0 φ 7.6 Hologram glass φ 6.6 Cap glass 3.6 Z (4) Since its semiconductor laser, signal detection photocell, and circuit array are assembled in a package, the optical pickup is simple in assembling and adjustment ■ (Unit: mm) LD chip Reference surface Applications (1) Magneto-optical disk drives (2) CD-Rs 10 - φ 0.45 φ4.9 0.4 6 5 4 45˚ 45˚ 7 3 X 8 2 9 1 10 1.0 Y allowance = ±0.2mm [Terminal connection] 3 4 Monitor photodiode Laser diode 8 10 G D1 7 ■ Absolute Maximum Ratings Parameter Symbol Ratings Optical power output*1 PO 35 Laser 2 Reverse Monitor photodiode VR 30 voltage Photodiode for signal detection 15 Operating temperature*2 Topr -10 to +50 Storage temperature *2 Tstg -40 to +85 Soldering temperature *3 Tsol 260(5s or less) Units mW V D2 9 D3 1 D4 2 *1 Output power from LD chip *2 Case temperature *3 At the position of 1.6mm from the bottom face of resin package. ˚C (Notice) • In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. • Specifications are subject to change without notice for improvement. TEC N 940525 LT0H12M ■ Electro-optical Characteristics (Tc=25˚C) Parameter Threshold current Operating current Operating voltage Wavelength *2 Monitor current Angle Radiation Characteristics *3 Laser (without hologram glass) Parallel Perpendicular Symbol Ith Iop Vop λp Im θ// θ⊥ Condition Po =30mW *1 Po =30mW *1 ,VR=15V Ripple ∆φ // Angle ∆φ ⊥ Positon ∆X,Y,Z Emission Point accuracy Monitor Photodiode Photodiode for signal detection PO =30mW *1 20mW Iop(30mW) - Iop(10mW) Differentioal efficiency η Sensitivity Dark current Terminal capacitance Reverse voltage Dark current S ID Ct VR Id IR=10µA VR=15V Terminal capacitance Ct VR=15V,f=1MHZ Short circuit current *4 Isc Ev=1000Lx *5 Response time *6 tr,tf VR=15V VR=15V,RL=180Ω A,B A,B A B A B A,B MIN 770 0.1 8 20. -20 -2 -3 -80 TYP 60 115 1.85 780 0.3 9.5 26 - MAX 80 150 2.2 795 2 13 32 20 2 3 80 Units mA mA V nm mA ˚ ˚ % ˚ ˚ µm 0.3 0.55 0.8 mW/mA 15 0.6 0.8 85 260 - 10 8 2.8 3 170 460 10 150 20 5 5.4 270 670 140 µA/mW nA pF V nA pF nA ns *1 *2 *3 *4 Output power form LD chip Oscillation mode, transverse single mode An angle for 50% of the peak intensity (full angle at half maximum). Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other *5 Illumination intensity by CIE standard light (Tungsten lamp) *6 Measuring method is shown below 50% Input Laser diode λ=780nm Output Input 90% VR=15V RL=180Ω Output tr *7 Applicabledivisions correspond to pattern segment No. D1 D2 D3 D4 Segment No. D2,D3 ••••••• A D1,D4 ••••••• B 10% tf TEC N 940525 LT0H12M ■ Electro-optical Characteristics *1 Condition Parameter Focus error signal offsetting *2 Lead-in for focus error signal *3 Radial offsetting *4 FES Output amplitude *5 RES Output amplitude *5 *1 Laser output 4.2mW TYP -12 90 3.9 3.3 MIN -20 -10 2.4 2.5 (Tc=25˚C) MAX Units -4 % µm 10 % 5.0 µA p-p 4.1 µA p-p Measuring method is shown below. MO Disk Actuator Laser C.L. Driver O.L HL NA=0.35 NA=0.5 f=6.0mm f=3.45mm * Distance between C.L-O.L: 27mm C.L: Collimator lens O.L: Objective lens Measuring method of electro-optical characteristics *2 FES output (a)/FESp-p at Maximum point of the FES output amplitude a GND *4 (a-b)/2(a+b) a GND b *4 *3 (a-b)/ (a+b) a b FESp-p GND *5 Values at 4.2mW of the laser output Both FES output amplitude (D2-D3) and RES output amplitude (D1-D4) are p-p values at focusing oscillation