PD663PS/PD666PS PD663PS/PD666PS 6-division photodiodes ■ Features ■ Outline Dimensions (Unit: mm) Internal connection diagram 1. For 3 beams(6-division photodiodes) 2. With non-reflective layer 3. Transparent transfer molded package 1.2 2.2 Y 8 7 6 5 1 2 3 4 Detector center A1 ■ Applications 0.5 1. Optical pick-up for CD player Enlarged Figure of Light Detecting Portion 2 2.5±0.2 (Unit: µm) 3 X' A2 0.4 1 12.4 4.0±0.1 2.0 ±0.2 B2 B1 X B4 B3 4 5 1.27 6 7 8 Y' 1 3 4 Y Anode 5 7 8 Anode 2 6 Cathode .5 5 .5 40 .5 67 B3 10˚ 0.63 10˚ Transparent epoxy resin 40 5 5.0±0.1 0 16 0 20 PD663PS Y' Y A2 B3 B4 150 72.5 72.5 30 A1 72.5 72.5 X 250 5 5 B2 B1 X' 150 30 PD666PS Y' ■ Absolute Maximum Ratings *1 Parameter Reverse voltage Operating temperature Storage temperature Soldering temperature 0.15 X' B4 B2 A2 67 Chip (Light detecting portion) 16 97 0 .5 B1 X 10˚ 0.97 A1 97 10˚ 1.5±0.1 0 20 45˚±3˚ Symbol VR T opr T stg T sol (Ta=25˚C) Ratings 30 -25 to +85 -40 to +85 260 Unit V ˚C ˚C ˚C *1 For MAX. 3 seconds at the position of 1.0mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PD663PS/PD666PS ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Conditions PD663PS *2 *3 Short circuit current I SC E V=1000 lx Reverse voltage VR I R =10mA Dark current Id V R =15V Terminal Capacitance Ct V R =15V f=1MHz Peak sensitivity wavelength λP Cut-off frequency fC Sensitivity S *4 PD666PS *5 V R =15V,R L=50Ω Output: -3dB at 500 kHz λ=780nm *6 A B A B A,B A B A B A,B A B A,B MIN. 340 80 400 70 30 0.45 TYP. 490 120 570 100 3 2 840 35 35 0.55 MAX. 640 160 740 130 300 200 0.65 *2 Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other. *3 Short-circuit currents at two segments on both ends and four segments on the center of the element shall be within ±10% of the average. ( standard light source A(tungsten lamp) *4 Ev:Illuminance by CIE *5 Values in each element. *6 Like signs represent like elements in the light detector. A B B B B B B B A B A A PD663PS PD666PS Fig.2 Spectral Sensitivity 100 100 80 80 Relative sensitivity (%) Power dissipation P (mW) Fig.1 Power Dissipation vs. Ambient Temperature 60 40 20 0 -25 Ta=25˚C 60 40 20 0 25 50 75 Ambient temperatuer Ta (˚C) 100 0 400 500 600 700 800 900 1000 1100 Wavelength λ (nm) Unit nA nA nA nA V pA pA pF pF nm MHz MHz A/W PD663PS/PD666PS FIG. 3 Dark Current vs. Ambient Temperature Dark Current Id (A) 10 Fig.4 Dark Current vs. Reverse Voltage -8 10 A: Tracking pattern B: Focusing pattern Ta=25˚C A: Tracking pattern B: Focusing pattern -9 -10 10 A -11 10 B -12 10 -13 10 -9 VR=15V Dark Current Id (A) 10 -25 0 25 50 75 100 10 -10 10 -11 10 -12 10 -13 A B 0.01 0.1 Fig.5 Terminal Capacitance vs. Reverse Voltage 1000lx A Light source A: Tracking pattern B: Focusing pattern 105 Relative output (%) Terminal Capacitance Ct (pF) Fig.6 Relative Sensitivity vs. Ambient Temperature f=1MHz Ta=25˚C A 14 12 10 8 B 6 4 2 0 0.1 0.2 100 95 Output at Ta=25˚:100% 90 0.5 1 2 5 10 20 85 -25 50 Reverse Voltage VR (V) Fig.7 Responce Time vs. Load Resistance 10 1 10 0 0 Fig.8 Frequency Response +2 VR=10V Ta=25˚C responsivity (dB) Responce Time tr,tf (µs) tr' tf 10 -1 100 25 50 75 Ambient Temperature Ta (˚C) V=15V RL=50Ω Ta=25˚C Input: Laser diode (λp=780mm) 0 10 100 110 26 24 22 20 18 16 10 10 Reverse Voltage VR (V) Ambient Temperature Ta (˚C) 2 1 -2 -4 -6 -2 10 1 10 2 10 3 10 Load Resistance RL (kΩ) 4 10 5 -8 0.1 0.5 1 5 10 frequency f (MHz) 50 100