SHINDENGEN M1FH3

SHINDENGEN
Schottky Rectifiers (SBD)
Single
OUTLINE DIMENSIONS
M1FH3
30V 1.5A
RATINGS
œAbsolute Maximum Ratings (Tc=25Ž)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Average Rectified Forward Current
IO
50Hz sine wave, R-load Tc=105Ž
Peak Surge Forward Current
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
œElectrical Characteristics
Item
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Tc=25Ž
Symbol
VF1
VF2
IR
Cj
Æjc
Æjl
Æja
Conditions
IF=0.5A, Pulse measurement
IF=1.5A, Pulse measurement
VR=VRM, Pulse measurement
f=1MHz, VR=10V
junction to case
junction to lead
junction to ambient On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55`125
125
30
1.5
30
Unit
Ž
Ž
V
A
A
Ratings
Max.0.30
Max.0.36
Max.1.0
Typ.80
Max.18
Max.20
Max.80
Unit
V
mA
pF
Ž/W
M1FH3
Forward Voltage
10
Forward Current IF [A]
5
2
Tc=125°C [MAX]
Tc=125°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
1
0.5
0.2
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
Forward Voltage VF [V]
1
1.2
M1FH3
Forward Power Dissipation
Forward Power Dissipation PF [W]
3
2.5
0.05 0.1
0.2
0.5
0.3 SIN
D=0.8 DC
2
1.5
1
0.5
0
0
1
2
3
4
5
Average Rectified Forward Current IO [A]
Tj = 125°C
IO
0
tp
D=tp/T
T
Peak Surge Forward Capability
M1FH3
IFSM
50
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycle]
50
100
M1FH3
Reverse Current
1000
Tc=125°C [TYP]
Reverse Current IR [mA]
100
Tc=100°C [TYP]
10
Tc=75°C [TYP]
Tc=50°C [TYP]
1
Pulse measurement per diode
0.1
0
5
10
15
20
25
Reverse Voltage VR [V]
30
35
40
M1FH3
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
7
6
DC
D=0.05
0.1
5
0.2
4
0.3
3
0.5
2
SIN
0.8
1
0
0
5
10
15
20
25
30
35
Reverse Voltage VR [V]
Tj = 125°C
0
VR
tp
D=tp/T
T
M1FH3
Junction Capacitance
1000
f=1MHz
Tc=25°C
TYP
Cj [pF]
500
Junction Capacitance
200
100
50
20
10
0.1
0.2
0.5
1
2
Reverse Voltage
5
VR [V]
10
20
30
M1FH3
Derating Curve
Average Rectified Forward Current IO [A]
3
2.5
DC
D=0.8
2
0.5
1.5 SIN
0.3
0.2
1
0.1
0.05
0.5
0
0
20
40
60
80
100
120
140
Case Temperature Tc [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
M1FH3
Derating Curve
Average Rectified Forward Current IO [A]
3
2.5
DC
D=0.8
2
0.5
1.5 SIN
0.3
0.2
1
0.1
0.05
0.5
0
0
20
40
60
80
100
120
140
Lead Temperature Tl [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
M1FH3
Transient Thermal Impedance
100
Transient Thermal Impedance
Æjc,Æjl,Æja [°C/W]
Æja
Æjl
Æjc
10
1
0.1
10-4
10-3
10-2
10-1
Time
100
t [s]
101
102
103
M1FH3
θja -
Conductor pattern area
160
Glass-epoxy substrate
Conductor layer 35um
140
θja [°C/W]
120
100
80
60
40
20
0
1
10
100
Conductor pattern area
1000
[mm2]