SONY CXK5B41020TM-

CXK5B41020TM -12
262144-word × 4-bit High Speed Bi-CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK5B41020TM is a high speed 1M bit Bi-CMOS
static RAM organized as 262144 words by 4 bits.
Operating on a single 3.3V supply this asynchronous
IC is suitable for use in high speed and low power
applications.
Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time
12ns (Max.)
• Low standby current:
10mA (Max.)
• Low power operation 792mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B41020TM 400mil 32pin TSOP package
Block Diagram
32 pin TSOP (PIastic)
Function
262144 word × 4-bit static RAM
Structure
Silicon gate Bi-CMOS IC
Pin Configuration (Top View)
A16
NC
1
32 A4
A3
2
31 A5
A2
3
30 A6
A1
4
29 A7
A15
A0
5
28 A8
A12
CE
6
27 OE
I/O1
7
26 I/O4
Vcc
8
25 GND
A17
A10
A9
A14
Buffer
Row
Decoder
Memory
Matrix
256 × 4096
GND
A11
A6
A13
A0
GND 9
24 Vcc
I/O2 10
23 I/O3
WE
A5
A4
A3
Vcc
Buffer
I/O Gate
Column
Decoder
A2
A1
Pin Description
Symbol
Description
A0 to A17
Address input
I/O1 to I/O4
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VCC
+3.3V power supply
GND
Ground
NC
No connection
22 A9
11
A17 12
21 A10
A16 13
20 A11
A15 14
19 A12
A14 15
18 A13
NC
17 NC
16
A7
A8
WE
I/O Buffer
OE
CE
I/O1 I/O4
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93726-ST
CXK5B41020TM
Absolute Maximum Ratings
(Ta = 25°C, GND=0V)
Item
Symbol
VCC
Rating
–0.5∗1 to +4.6
Input voltage
VIN
–0.5∗1 to VCC + 0.5
Input and output voltage
VI/O
Allowable power dissipaiton
PD
Operating temperature
Storage temperature
Supply voltage
V
W
Topr
0 to +70
°C
Tstg
–55 to +150
°C
235 • 10
°C • sec
∗1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns.
∗2 Air flow ≥ 1m/s.
Truth Table
CE
OE
WE
Mode
H
×
×
Not selected
High Z
ISB1, ISB2
L
L
H
Read
Data out
ICC
L
×
L
Write
Data in
ICC
L
H
H
Output disable
High Z
ICC
I/O1 to I/O4
Current
×: "H" or "L"
Recommended Operating Conditions
Symbol
V
–0.5∗1 to VCC + 0.5
1.5∗2
Soldering temperature • time Tsolder
Item
Unit
(Ta = 0 to +70°C, GND = 0V)
Min.
Typ.
Max.
Unit
Supply voltage
VCC
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
—
VCC + 0.3
V
Input low voltage
VIL
–0.3∗
—
0.8
V
∗ VIL=–2.0V Min. for pulse width less than 5ns.
–2–
V
CXK5B41020TM
Electrical Characteristics
DC Characteristics
(Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Conditions
Min.
Typ.∗
Max
Unit
ILI
VIN = GND to VCC
–10
—
+10
µA
ILO
CE = VIH or
OE = VIH or
WE = VIL
VI/O = GND to VCC
–10
—
+10
µA
ICC
Cycle: Min.
Duty = 100%
IOUT = 0mA
CE = VIL
VIN = VIH or VIL
—
—
220
mA
ISB1
CE ≥ VCC – 0.2V
VIN ≥ VCC – 0.2V or
VIN ≤ 0.2V
—
—
10
mA
ISB2
Cycle: Min.
Duty = 100%
CE = VIH
VIN = VIH or VIL
—
—
100
mA
Output high voltage
VOH
IOH = –2.0mA
2.4
—
—
V
Output low voltage
VOL
IOL = 2.0mA
—
—
0.4
V
Item
Input leakage current
Output leakage current
Average operating current
Symbol
Standby current
∗ Vcc = 3.3V, Ta = 25°C
I/O Capacitance
Item
(Ta = 25°C, f = 1MHz)
Symbol
Conditions
Min.
Typ.
Max
Unit
Input capacitance
CIN
VIN = 0V
—
—
5
pF
I/O capacitance
CI/O
VI/O = 0V
—
—
7
pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Item
Condition
Input pulse high level
VIH = 3.0V
Input pulse low level
VIL = 0.0V
Input rise time
Input fall time
tr = 2ns
tf = 2ns
Input and output reference level
1.4V
Output load conditions
Fig. 1
Output load (1)
I/O
Output Load (2)∗1
3.3V
Zo=50Ω
RL=50Ω
VL=1.4V
I/O
5pF∗2
∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ
∗2. Including scope and jig capacitances
Fig. 1
–3–
1179Ω
868Ω
CXK5B41020TM
• Read cycle
Item
Symbol
-12
Unit
Min.
Max.
Read cycle time
tRC
12
—
ns
Address access time
tAA
—
12
ns
Chip enable access time
tCO
—
12
ns
Output enable to output valid
tOE
—
6
ns
Output data hold time
tOH
3
—
ns
Chip enable to output in low Z (CE)
tLZ
3
—
ns
Output enable to output in low Z (OE)
tOLZ∗
0
—
ns
Chip disable to output in high Z (CE)
tHZ∗
0
6
ns
Output disable to output in high Z (OE)
tOHZ∗
0
6
ns
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
• Write cycle
Item
Symbol
-12
Unit
Min.
Max.
Write cycle time
tWC
12
—
ns
Address valid to end of write
tAW
10
—
ns
Chip enable to end of write
tCW
10
—
ns
Data valid to end of write
tDW
8
—
ns
Data hold from end of write
tDH
0
—
ns
Write pulse width
tWP
10
—
ns
Address set up time
tAS
0
—
ns
Write recovery time
tWR
0
—
ns
Output active from lend of write
tOW∗
4
—
ns
Write to output in high Z
tWHZ∗
0
6
ns
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
–4–
CXK5B41020TM
Timing Waveform
• Read cycle (1) : OE=VIL, WE=VIH
tRC
Address
tAA
tOH
Data out
Previous data valid
Data valid
• Read cycle (2) : WE=VIH
tRC
Address
tAA
tCO
CE
tLZ
tHZ
OE
tOE
tOLZ
tOHZ
Data valid
Data out
High impedance
–5–
CXK5B41020TM
• Write cycle (1) : WE control
tWC
Address
tWR
tAW
tCW
CE
tAS
tWP
WE
tDW
Data in
tDH
Data valid
tWHZ
tOW
Data out
High impedance
• Write cycle (2) : CE control
tWC
Address
tWR
tAW
tAS
tCW
CE
tWP
WE
tDH
tDW
Data valid
Data in
tLZ
tWHZ
Data out
High impedance
∗ Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
–6–
CXK5B41020TM
Example of Representative Characteristics
Supply current vs. Supply voltage
Supply current vs. Ambient temperature
1.4
ICC — Supply current [Normalized]
ICC — Supply current [Normalized]
1.4
1.2
1.0
0.8
Ta = 25°C
0.6
3.0
1.2
1.0
0.8
VCC = 3.3V
0.6
3.15
3.3
3.45
VCC — Supply voltage [V]
3.6
0
Supply current vs. Frequency
1.8
tAA, tCO, tOE — Access time [Normalized]
ICC — Supply current [Normalized]
80
Access time vs. Load capacitance
12ns
1.0
0.75
0.5
0.25
tOE
1.6
1.4
tCO, tAA
1.2
Ta = 25°C
VCC = 3.3V
1.0
0
0
25
50
75
Frequency (1/tRC, 1/tWC) [MHz]
0
100
Access time vs. Supply voltage
tOE
tAA, tCO
tAA
1.0
tCO
tOE
0.8
Ta = 25°C
0.6
3.0
160
1.4
tAA, tCO, tOE — Access time [Normalized]
1.2
40
80
120
CL — Load capacitance [pF]
Access time vs. Load capacitance
1.4
tAA, tCO, tOE — Access time [Normalized]
20
40
60
Ta — Ambient temperature [°C]
1.2
tCO, tOE
1.0
tCO
tAA
tAA
tOE
0.8
VCC = 3.3V
0.6
3.15
3.3
3.45
VCC — Supply voltage [V]
3.6
0
–7–
20
40
60
Ta — Ambient temperature [°C]
80
CXK5B41020TM
Standby current vs. Supply voltage
Standby current vs. Ambient temperature
1.4
ISB2
1.2
ISB1
1.0
0.8
Ta = 25°C
0.6
3.0
ISB1 — Standby current [Normalized]
ISB1, ISB2 — Standby current [Normalized]
1.4
1.2
1.0
0.8
VCC = 3.3V
0.6
3.15
3.3
3.45
VCC — Supply voltage [V]
3.6
0
Input voltage level vs. Supply voltage
ISB2 — Standby current [Normalized]
VIL, VIH — Input voltage [Normalized]
1.4
1.1
VIH
VIL
1.0
0.9
Ta = 25°C
1.0
0.8
VCC = 3.3V
3.6
0
Output high current vs. Output high voltage
20
40
60
Ta — Ambient temperature [°C]
80
Output low current vs. Output low voltage
1.8
IOL — Output low current [Normalized]
IOH — Output high current [Normalized]
1.2
0.6
3.15
3.3
3.45
VCC — Supply voltage [V]
4.0
3.0
2.0
1.0
VCC = 3.3V
0.0
0.0
80
Standby current vs. Ambient temperature
1.2
0.8
3.0
20
40
60
Ta — Ambient temperature [°C]
1.4
1.0
0.6
VCC = 3.3V
0.2
1.0
2.0
3.0
VOH — Output high voltage [V]
4.0
0
–8–
0.2
0.4
0.6
VOL — Output low voltage [V]
0.8
CXK5B41020TM
Package Outline
Unit: mm
32PIN TSOP (II) (PLASTIC) 400mil
1.27 MAX
∗20.95 ± 0.1
32
0.1
1
11.76 ± 0.2
∗10.16 ± 0.1
17
A
16
1.27
0.4 ± 0.1
+ 0.05
0.127 – 0.02
0.21 M
0.5 ± 0.1
0.1 ± 0.1
0° to 10°
NOTE: Dimension “∗” does not include mold protrusion.
DETAIL A
PACKAGE STRUCTURE
SONY CODE
TSOP (II) -32P-L01
EIAJ CODE
TSOP (II) 032-P-0400-A
JEDEC CODE
PACKAGE MATERIAL
EPOXY / PHENOL RESIN
LEAD TREATMENT
SOLDER PLATING
LEAD MATERIAL
42 ALLOY
PACKAGE WEIGHT
–9–