SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. M-281 Features • Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97939-PS SGM2016AN Electrical Characteristics (Ta = 25°C) Item Symbol Drain cut-off current IDSX Gate 1 to source current IG1SS Gate 2 to source current IG2SS Drain saturation current IDSS Gate 1 to source cut-off voltage VG1S (OFF) Gate 2 to source cut-off voltage VG2S (OFF) Forward transfer admittance gm Input capacitance Ciss Feedback capacitance Crss Noise figure NF NF associated gain Ga Conditions Min. VDS = 12V VG1S = –4V VG2S = 0V VG1S = –4.5V VG2S = 0V VDS = 0V VG2S = –4.5V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10mA VG2S = 1.5V f = 1kHz VDS = 5V ID = 10mA VG2S = 1.5V f = 1MHz VDS = 5V ID = 10mA VG2S = 1.5V f = 900MHz Typ. 10 20 17 Max. Unit 50 µA –8 µA –8 µA 35 mA –2.5 V –2.5 V ms 30 0.9 2.0 pF 25 40 fF 1.2 2.0 dB dB 21 Typical Characteristics (Ta = 25°C) ID vs. VDS ID vs. VG1S (VG2S = 1.5V) (VDS = 5V) VG1S = 0V 30 –0.3V 20 –0.6V 10 VG2S = 1.5V 20 ID – Drain current [mA] ID – Drain current [mA] 1.0V 0.5V 25 40 0V 15 10 –0.5V 5 –0.9V –1.0V 0 0 1 2 3 4 5 VDS – Drain to source voltage [V] 0 –2.0 6 –2– –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 SGM2016AN ID vs. VG2S gm vs. VG1S 25 50 (VDS = 5V) VG1S = 0V 20 –0.2V 15 –0.4V 10 –0.6V 5 –0.8V VG2S = 1.5V 40 30 1.0V 20 0.5V 10 0V –0.5V –1.0V –1.0V 0 –2.0 –1.5 –1.0 –0.5 VG2S – Gate 2 to source voltage [V] 0 –2.0 0 –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] Ga vs. VG1S NF vs. VG1S 30 5 (VDS = 5V, f = 900MHz) (VDS = 5V, f = 900MHz) 25 Ga – Associated gain [dB] NF – Noise figure [dB] 4 VG2S = 0.5V 3 2 1.0V 1.5V 1 VG2S = 1.5V 20 1.0V 15 0.5V 10 5 0 –1.2 0 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] 0.2 NF, Ga vs. ID (VDS = 5V, VG2S = 1.5V, ID = 10mA) 25 15 1.5 NF NF – Noise figure [dB] 20 2.0 10 0.5 5 0.5 0 0 0 2 4 6 8 10 12 14 16 18 20 22 ID – Drain current [mA] Ga 1.0 NFmin 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f – Frequency [GHz] –3– 25 20 1.5 1.0 0 30 2.5 Ga – Associated gain [dB] Ga 2.0 35 3.0 (VDS = 5V, VG2S = 1.5V, f = 900MHz) 2.5 0.2 NF, Ga vs. f 30 3.0 NF – Noise figure [dB] 0 Ga – Associated gain [dB] ID – Drain current [mA] gm – Forward transfer admittance [ms] (VDS = 5V) SGM2016AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) S11 S21 (Z0 = 50Ω) S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.999 0.994 0.981 0.969 0.952 0.935 0.917 0.896 0.877 0.850 0.822 0.797 0.769 0.744 0.717 0.692 0.668 0.641 0.617 0.589 –3.8 –7.9 –11.8 –16.0 –20.0 –24.1 –27.8 –31.3 –34.7 –38.0 –40.9 –44.0 –46.8 –49.7 –52.4 –54.9 –57.5 –59.6 –61.6 –63.4 2.521 2.515 2.499 2.480 2.451 2.420 2.391 2.362 2.331 2.294 2.254 2.216 2.182 2.153 2.118 2.076 2.038 2.005 1.963 1.929 174.2 168.1 162.3 156.3 150.6 144.8 139.4 133.9 128.5 122.9 117.7 112.4 107.3 102.1 96.9 91.8 86.6 81.4 76.4 71.5 0.002 0.003 0.005 0.006 0.007 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.013 0.013 95.0 87.9 83.6 77.7 82.1 76.3 76.8 78.7 74.4 82.6 79.3 72.4 79.0 81.5 80.3 83.7 90.1 98.4 109.0 113.0 0.969 0.966 0.964 0.961 0.957 0.955 0.955 0.954 0.954 0.953 0.952 0.949 0.947 0.946 0.945 0.945 0.945 0.945 0.945 0.945 –1.3 –3.0 –4.2 –6.1 –7.2 –8.8 –9.9 –11.5 –12.8 –14.4 –15.6 –17.2 –18.2 –20.0 –21.3 –22.9 –24.1 –25.8 –27.3 –28.7 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) NFmin (dB) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.73 0.79 0.85 0.92 0.99 1.05 1.11 1.18 1.25 1.32 1.39 1.46 1.53 1.61 1.68 1.76 1.84 1.92 2.00 Gamma Optimum ANG MAG Rn (Ω) 0.94 0.90 0.87 0.84 0.81 0.78 0.75 0.72 0.70 0.67 0.65 0.63 0.60 0.58 0.56 0.54 0.52 0.50 0.48 7.5 10.8 13.9 16.8 19.5 22.0 24.5 26.8 29.1 31.4 33.8 36.1 38.6 41.2 43.9 46.8 50.0 53.4 57.0 40.0 39.5 39.0 38.5 37.9 37.4 36.8 36.1 35.5 34.8 34.1 33.4 32.6 31.9 31.0 30.2 29.3 28.5 27.5 –4– SGM2016AN Package Outline Unit: mm SGM2016AN M-281 2.0 ± 0.2 1.3 (0.65) 3 0.9 ± 0.1 0.425 (0.65) 1 4 + 0.1 0.3 – 0.05 + 0.1 0.1 – 0.01 + 0.1 0.4 – 0.05 (0.65) (0.6) 1.25 SONY CODE 0 ± 0.1 2.1 ± 0.2 1.25 ± 0.1 2 M-281 1 : Source 2 : Gate 1 3 : Gate 2 4 : Drain PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.1g –5–