SONY 3SK166A-2

3SK166A
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
8
• Gate 1 to source voltage
VG1S
–6
• Gate 2 to source voltage
VG2S
–6
• Drain current
ID
80
• Allowable power dissipation
PD
150
• Channel temperature
Tch
150
• Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y11-PS
3SK166A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Condition
Min.
VDS = 8V
VG1S = –4V
VG2S = 0V
VG1S = –5V
IG1SS
VG2S = 0V
VDS = 0V
VG2S = –5V
IG2SS
VG1S = 0V
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
VG2S = 0V
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
VDS = 5V
ID = 10mA
gm
VG2S = 1.5V
f = 1kHz
VDS = 5V
Ciss
ID = 10mA
VG2S = 1.5V
Crss
f = 1MHz
VDS = 5V
NF
ID = 10mA
VG2S = 1.5V
Ga
f = 800MHz
Typ.
Max.
Unit
100
µA
–20
µA
–20
µA
20
80
mA
–1
–4
V
–1
–4
V
IDSX
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
25
40
ms
1.3
2.0
pF
25
40
fF
1.2
2.5
dB
18
20
dB
∗ IDSS classification
Product name classification
IDSS RANK
3SK166A-0
20 to 80mA
3SK166A-2
45 to 80mA
Typical Characteristics (Ta = 25°C)
ID vs. VDS
ID vs. VG1S
100
100
(VG2S = 1.5V)
(VDS = 5V)
VG1S
= 0V
80
ID – Drain current [mA]
ID – Drain current [mA]
80
–0.2V
60
–0.4V
–0.6V
40
–0.8V
–1.0V
20
VG2S
= 1.5V
1.0V
0.5V
70
0V
60
–0.5V
40
–1.5V
–1.2V
–1.4V
–1.6V
0
0
2
4
6
20
–2.0
8
VDS – Drain to source voltage [V]
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
–2–
0
3SK166A
ID vs. VG2S
gm vs. VG1S
100
100
gm – Forward transfer admittance [ms]
(VDS = 5V)
VG1S
= 0V
–0.2V
–0.4V
–0.6V
60
40
–0.8V
–1.0V
20
–1.2V
–1.4V
0
–2.0
–1.5
–1.0
–0.5
VG2S – Gate 2 to source voltage [V]
80
VG2S
= 1.5V
60
1.0V
50
0.5V
40
20
–2.0
0
0V
–0.5V
–1.0V
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
NF vs. VG1S
Ga vs. VG1S
6
30
(VDS = 5V, f = 800MHz)
(VDS = 5V, f = 800MHz)
25
4
Ga – Gain [dB]
NF – Noise figure [dB]
5
3
VG2S = 0.5V
1.0V
1.5V
2
1
VG2S = 1.5V
1.0V
1.5V
20
15
10
5
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
NF, Ga vs. f
30
3.0
NFmin – Minimum noise figure [dB]
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
25
2.5
20
15
1.5
NF
Ga – Gain [dB]
Ga
2.0
10
1.0
5
0.5
0
0
0
2
4
30
3.0
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
NF – Noise figure [dB]
0
25
2.5
Ga
2.0
20
1.5
15
10
1.0
NFmin
5
0.5
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
6 8 10 12 14 16 18 20 22
ID – Drain current [mA]
–3–
Ga – Gain [dB]
ID – Drain current [mA]
80
(VDS = 5V)
3SK166A
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
S11
S21
(Z0 = 50Ω)
S12
S22
f
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.996
0.988
0.969
0.948
0.927
0.899
0.873
0.845
0.816
0.785
0.754
0.723
0.694
0.669
0.643
0.621
0.601
0.583
0.565
0.545
–5.0
–9.8
–14.8
–19.8
–24.6
–29.3
–33.5
–37.5
–41.2
–44.5
–47.6
–50.3
–53.2
–55.6
–58.1
–60.4
–62.3
–64.5
–66.6
–68.1
3.807
3.783
3.726
3.670
3.602
3.507
3.414
3.333
3.244
3.146
3.061
2.965
2.874
2.800
2.709
2.636
2.545
2.464
2.364
2.283
172.8
165.5
158.4
151.5
144.5
137.9
131.4
125.2
118.9
112.8
106.9
101.2
95.4
90.0
84.2
78.5
72.8
67.0
61.3
55.8
0.002
0.005
0.007
0.009
0.010
0.011
0.013
0.013
0.015
0.016
0.016
0.016
0.017
0.017
0.018
0.018
0.020
0.022
0.026
0.028
86.5
87.7
87.3
85.6
81.9
84.3
83.5
82.3
86.3
86.8
88.0
92.4
95.8
97.9
103.3
111.5
119.2
129.3
132.1
136.6
0.936
0.933
0.930
0.927
0.925
0.922
0.923
0.921
0.926
0.924
0.920
0.921
0.921
0.924
0.925
0.926
0.927
0.924
0.915
0.912
–1.9
–4.0
–6.1
–8.2
–10.2
–12.1
–14.2
–16.3
–18.2
–20.3
–22.3
–24.4
–26.5
–28.9
–31.4
–33.9
–36.9
–39.5
–42.4
–45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
NFmin
(dB)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.29
0.41
0.52
0.64
0.75
0.86
0.97
1.07
1.18
1.28
1.39
1.49
1.59
1.68
1.78
1.88
1.97
2.06
2.15
Gamma Optimum
ANG
MAG
Rn
(Ω)
0.89
0.85
0.81
0.77
0.73
0.70
0.67
0.64
0.61
0.59
0.57
0.54
0.52
0.50
0.48
0.45
0.43
0.40
0.38
7.3
10.6
13.7
16.7
19.5
22.3
24.9
27.5
30.1
32.6
35.2
37.8
40.5
43.3
46.3
49.3
52.6
56.0
59.7
30.3
29.7
29.2
28.7
28.3
27.8
27.4
27.0
26.7
26.3
26.0
25.8
25.5
25.3
25.1
25.0
24.9
24.8
24.7
–4–
3SK166A
Unit: mm
M-254
2.9 ± 0.2
1.9
( 0.95 )
( 0.95 )
0.6
+ 0.2
1.1 – 0.1
4
2.8 ± 0.2
2
3
+ 0.2
1.6 – 0.1
Package Outline
0 to 0.1
1
+ 0.1
0.4 – 0.05
+ 0.1
0.6 – 0.05
( 0.95 )
+ 0.1
0.10 – 0.01
( 0.85 )
1.8
1. Source
2. Gate1
3. Gate2
4. Drain
SONY CODE
M-254
PACKAGE MASS
EIAJ CODE
JEDEC CODE
–5–
0.01g