SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. M-281 Features • Ultra small package • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97938-PS SGM2014AN Electrical Characteristics (Ta = 25°C) Item Symbol Drain cut-off current Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Forward transfer admittance Input capacitance Feedback capacitance Noise figure Associated gain Condition Min. VDS = 12V VG1S = –4V VG2S = 0V VG1S = –4.5V IG1SS VG2S = 0V VDS = 0V VG2S = –4.5V IG2SS VG1S = 0V VDS = 0V VDS = 5V IDSS VG1S = 0V VG2S = 0V VDS = 5V VG1S (OFF) ID = 100µA VG2S = 0V VDS = 5V VG2S (OFF) ID = 100µA VG1S = 0V VDS = 5V I D = 10mA gm VG2S =1.5V f = 1kHz VDS = 5V Ciss ID = 10mA VG2S = 1.5V Crss f = 1MHz VDS = 5V NF ID = 10mA VG2S = 1.5V Ga f = 900MHz Typ. IDSX 8 13 15 Max. unit 50 µA –8 µA –8 µA 28 mA –2.5 V –2.5 V 17 ms 0.9 2 pF 25 50 fF 1.5 2.5 dB 18 dB Typical Characteristics (Ta = 25°C) ID vs. VDS ID vs. VG1S VG2S = 1.5V 25 40 (VG2S = 1.5V) (VDS = 5V) 1.0V ID – Drain current [mA] ID – Drain current [mA] 20 30 VG1S = 0V 20 –0.3V –0.6V 10 –0.9V 0.5V 0V 15 –0.5V 10 –1.0V 5 –1.2V –1.5V –1.5V 0 0 1 2 3 4 5 VDS – Drain to source voltage [V] 0 –2.0 6 –2– –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 SGM2014AN ID vs. VG2S gm vs. VG1S 25 25 (VDS = 5V) VG1S = 0V –0.2V –0.4V 15 –0.6V 10 –0.8V –1.0V 5 –1.2V VG2S = 1.5V 20 15 1.0V 10 0.5V 5 0V –0.5V –1.0V –1.4V 0 –2.0 –1.5 –1.0 –0.5 VG2S – Gate 2 to source voltage [V] 0 –2.0 0 –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] NF vs. VG1S Ga vs. VG1S 6 25 (VDS = 5V, f = 900MHz) 20 4 Ga – Gain [dB] NF – Noise figure [dB] (VDS = 5V, f = 900MHz) VG2S = 0.5V 5 1.0V 3 2 VG2S = 1.5V 15 1.0V 10 0.5V 1.5V 5 1 0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] 0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] 0.2 NF, Ga vs. ID 30 3.0 (VDS = 5V, VG2S = 1.5V, f = 900MHz) NFmin – Minimum noise figure [dB] (VDS = 5V, VG2S = 1.5V, ID = 10mA) Ga 2.0 20 15 1.5 NF 1.0 10 0.5 5 Ga – Gain [dB] 25 2.5 0 0 0 2 4 0.2 NF, Ga vs. f 30 3.0 NF – Noise figure [dB] 0 25 2.5 Ga 2.0 20 1.5 15 1.0 10 NFmin 5 0.5 0 0 6 8 10 12 14 16 18 20 22 ID – Drain current [mA] 0 –3– 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f – Frequency [GHz] Ga – Gain [dB] ID – Drain current [mA] 20 gm – Forward transfer admittance [ms] (VDS = 5V) SGM2014AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) S11 S21 (Z0 = 50Ω) S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.999 0.997 0.991 0.981 0.968 0.956 0.944 0.929 0.917 0.898 0.877 0.855 0.831 0.809 0.785 0.762 0.737 0.721 0.685 0.655 –2.8 –5.9 –9.0 –12.3 –15.5 –18.9 –21.8 –24.7 –27.4 –30.4 –32.8 –35.4 –38.0 –40.8 –43.3 –45.8 –48.2 –50.5 –52.7 –54.5 1.531 1.527 1.526 1.520 1.506 1.497 1.486 1.478 1.468 1.454 1.440 1.422 1.412 1.399 1.387 1.366 1.349 1.333 1.316 1.298 175.1 170.2 165.4 160.3 155.6 150.7 146.1 141.5 136.7 131.8 127.4 122.8 118.4 113.8 109.3 104.6 100.3 95.8 91.5 87.2 0.001 0.003 0.003 0.005 0.006 0.008 0.008 0.009 0.010 0.011 0.012 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.013 0.013 87.1 78.7 81.9 82.0 78.7 83.6 83.0 77.8 77.2 79.9 81.0 78.3 76.9 76.6 74.7 76.7 76.4 80.2 79.8 83.2 0.979 0.979 0.975 0.974 0.970 0.969 0.968 0.967 0.967 0.967 0.962 0.959 0.956 0.955 0.952 0.950 0.950 0.950 0.949 0.945 –1.9 –4.0 –6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 –31.4 –33.9 –36.9 –39.5 –42.4 –45.0 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) NFmin (dB) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.76 0.88 0.99 1.11 1.23 1.34 1.45 1.54 1.62 1.71 1.80 1.90 1.99 2.09 2.18 2.26 2.34 2.42 2.50 Gamma Optimum ANG MAG Rn (Ω) 0.94 0.91 0.88 0.86 0.83 0.81 0.79 0.77 0.75 0.73 0.71 0.69 0.67 0.65 0.63 0.61 0.59 0.56 0.54 5.8 8.4 11.0 13.4 15.6 17.8 19.9 22.0 24.0 25.9 27.8 29.7 31.6 33.5 35.5 37.5 39.5 41.6 43.8 59.7 59.6 59.4 59.1 58.8 58.4 58.0 57.4 56.8 56.2 55.4 54.6 53.8 52.8 51.8 50.7 49.6 48.3 47.0 –4– SGM2014AN Unit: mm M-281 2.0 ± 0.2 1.3 (0.65) 3 0.9 ± 0.1 0.425 (0.65) 2 1 4 + 0.1 0.3 – 0.05 + 0.1 0.1 – 0.01 + 0.1 0.4 – 0.05 (0.65) (0.6) 1.25 SONY CODE 0 ± 0.1 2.1 ± 0.2 1.25 ± 0.1 Package Outline 1 : Source 2 : Gate 1 3 : Gate 2 4 : Drain PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING M-281 EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.1g –5–