SONY SGM2014AN

SGM2014AN
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2014AN is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.
M-281
Features
• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
12
• Gate 1 to source voltage
VG1S
–5
• Gate 2 to source voltage
VG2S
–5
• Drain current
ID
55
• Allowable power dissipation
PD
100
• Channel temperature
Tch
125
• Storage temperature
Tstg –55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97938-PS
SGM2014AN
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
Condition
Min.
VDS = 12V
VG1S = –4V
VG2S = 0V
VG1S = –4.5V
IG1SS
VG2S = 0V
VDS = 0V
VG2S = –4.5V
IG2SS
VG1S = 0V
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
VG2S = 0V
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
VDS = 5V
I
D = 10mA
gm
VG2S =1.5V
f = 1kHz
VDS = 5V
Ciss
ID = 10mA
VG2S = 1.5V
Crss
f = 1MHz
VDS = 5V
NF
ID = 10mA
VG2S = 1.5V
Ga
f = 900MHz
Typ.
IDSX
8
13
15
Max.
unit
50
µA
–8
µA
–8
µA
28
mA
–2.5
V
–2.5
V
17
ms
0.9
2
pF
25
50
fF
1.5
2.5
dB
18
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
ID vs. VG1S
VG2S
= 1.5V
25
40
(VG2S = 1.5V)
(VDS = 5V)
1.0V
ID – Drain current [mA]
ID – Drain current [mA]
20
30
VG1S
= 0V
20
–0.3V
–0.6V
10
–0.9V
0.5V
0V
15
–0.5V
10
–1.0V
5
–1.2V
–1.5V
–1.5V
0
0
1
2
3
4
5
VDS – Drain to source voltage [V]
0
–2.0
6
–2–
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
0
SGM2014AN
ID vs. VG2S
gm vs. VG1S
25
25
(VDS = 5V)
VG1S
= 0V
–0.2V
–0.4V
15
–0.6V
10
–0.8V
–1.0V
5
–1.2V
VG2S
= 1.5V
20
15
1.0V
10
0.5V
5
0V
–0.5V
–1.0V
–1.4V
0
–2.0
–1.5
–1.0
–0.5
VG2S – Gate 2 to source voltage [V]
0
–2.0
0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
NF vs. VG1S
Ga vs. VG1S
6
25
(VDS = 5V, f = 900MHz)
20
4
Ga – Gain [dB]
NF – Noise figure [dB]
(VDS = 5V, f = 900MHz)
VG2S = 0.5V
5
1.0V
3
2
VG2S = 1.5V
15
1.0V
10
0.5V
1.5V
5
1
0
–1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0
VG1S – Gate 1 to source voltage [V]
0
–1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0
VG1S – Gate 1 to source voltage [V]
0.2
NF, Ga vs. ID
30
3.0
(VDS = 5V, VG2S = 1.5V, f = 900MHz)
NFmin – Minimum noise figure [dB]
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
Ga
2.0
20
15
1.5
NF
1.0
10
0.5
5
Ga – Gain [dB]
25
2.5
0
0
0
2
4
0.2
NF, Ga vs. f
30
3.0
NF – Noise figure [dB]
0
25
2.5
Ga
2.0
20
1.5
15
1.0
10
NFmin
5
0.5
0
0
6 8 10 12 14 16 18 20 22
ID – Drain current [mA]
0
–3–
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
Ga – Gain [dB]
ID – Drain current [mA]
20
gm – Forward transfer admittance [ms]
(VDS = 5V)
SGM2014AN
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
S11
S21
(Z0 = 50Ω)
S12
S22
f
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.999
0.997
0.991
0.981
0.968
0.956
0.944
0.929
0.917
0.898
0.877
0.855
0.831
0.809
0.785
0.762
0.737
0.721
0.685
0.655
–2.8
–5.9
–9.0
–12.3
–15.5
–18.9
–21.8
–24.7
–27.4
–30.4
–32.8
–35.4
–38.0
–40.8
–43.3
–45.8
–48.2
–50.5
–52.7
–54.5
1.531
1.527
1.526
1.520
1.506
1.497
1.486
1.478
1.468
1.454
1.440
1.422
1.412
1.399
1.387
1.366
1.349
1.333
1.316
1.298
175.1
170.2
165.4
160.3
155.6
150.7
146.1
141.5
136.7
131.8
127.4
122.8
118.4
113.8
109.3
104.6
100.3
95.8
91.5
87.2
0.001
0.003
0.003
0.005
0.006
0.008
0.008
0.009
0.010
0.011
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
87.1
78.7
81.9
82.0
78.7
83.6
83.0
77.8
77.2
79.9
81.0
78.3
76.9
76.6
74.7
76.7
76.4
80.2
79.8
83.2
0.979
0.979
0.975
0.974
0.970
0.969
0.968
0.967
0.967
0.967
0.962
0.959
0.956
0.955
0.952
0.950
0.950
0.950
0.949
0.945
–1.9
–4.0
–6.1
–8.2
–10.2
–12.1
–14.2
–16.3
–18.2
–20.3
–22.3
–24.4
–26.5
–28.9
–31.4
–33.9
–36.9
–39.5
–42.4
–45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
NFmin
(dB)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.76
0.88
0.99
1.11
1.23
1.34
1.45
1.54
1.62
1.71
1.80
1.90
1.99
2.09
2.18
2.26
2.34
2.42
2.50
Gamma Optimum
ANG
MAG
Rn
(Ω)
0.94
0.91
0.88
0.86
0.83
0.81
0.79
0.77
0.75
0.73
0.71
0.69
0.67
0.65
0.63
0.61
0.59
0.56
0.54
5.8
8.4
11.0
13.4
15.6
17.8
19.9
22.0
24.0
25.9
27.8
29.7
31.6
33.5
35.5
37.5
39.5
41.6
43.8
59.7
59.6
59.4
59.1
58.8
58.4
58.0
57.4
56.8
56.2
55.4
54.6
53.8
52.8
51.8
50.7
49.6
48.3
47.0
–4–
SGM2014AN
Unit: mm
M-281
2.0 ± 0.2
1.3
(0.65)
3
0.9 ± 0.1
0.425
(0.65)
2
1
4
+ 0.1
0.3 – 0.05
+ 0.1
0.1 – 0.01
+ 0.1
0.4 – 0.05
(0.65)
(0.6)
1.25
SONY CODE
0 ± 0.1
2.1 ± 0.2
1.25 ± 0.1
Package Outline
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
PACKAGE MATERIAL
EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
M-281
EIAJ CODE
LEAD MATERIAL
COPPER
JEDEC CODE
PACKAGE WEIGHT
0.1g
–5–