SONY SGM2013N

SGM2013N
GaAs N-channel Dual-Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
M-281
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
6
• Gate 1 to source voltage
VG1S
–4
• Gate 2 to source voltage
VG2S
–4
• Drain current
ID
18
• Allowable power dissipation
PD
100
• Channel temperature
Tch
125
• Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97144-PS
SGM2013N
Electrical Characteristics
Item
(Ta = 25°C)
Symbol
Gate 1 to source current
IG1SS
Gate 2 to source current
IG2SS
Drain saturation current
IDSS
Gate 1 to source cut-off
voltage
VG1S
(OFF)
Gate 2 to source cut-off
voltage
VG2S
(OFF)
Forward transfer admittance
gm
Input capacitance
Ciss
Feedback capacitance
Crss
Noise figure
NF
NF associated gain
Ga
Conditions
Min.
VG1S = –3V
VG2S = 0V
VDS = 0V
VG2S = –3V
VG1S = 0V
VDS = 0V
VDS = 2V
VG1S = 0V
VG2S = 0V
VDS = 2V
ID = 100µA
VG2S = 0V
VDS = 2V
ID = 100µA
VG1S = 0V
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1kHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1MHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 900MHz
Typ.
4
8
15
Max.
Unit
–4
µA
–4
µA
16
mA
–1.5
V
–1.5
V
11
ms
0.55
1
pF
15
30
fF
1.4
2.5
dB
18
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
ID vs. VG1S
20
20
(VG2S = 0.5V)
(VDS = 2V)
16
VG1S
= 0V
ID – Drain current [mA]
ID – Drain current [mA]
16
12
–0.2V
8
–0.4V
4
VG2S
= 0.5V
12
0.25V
0V
8
–0.25V
4
–0.5V
–0.6V
–0.8V
–1.0V
0
0
1
2
3
4
5
VDS – Drain to source voltage [V]
0
–2.0
6
–2–
–0.75V
–1.0V
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
0
SGM2013N
ID vs. VG2S
gm vs. VG1S
10
25
(VDS = 2V)
(VDS = 2V)
gm – Forward transfer admittance [ms]
VG1S
= 0V
ID – Drain current [mA]
8
–0.2V
6
–0.4V
4
–0.6V
2
–0.8V
–1.0V
0
–2.0
–1.5
–1.0
–0.5
VG2S – Gate 2 to source voltage [V]
20
VG2S
= 0.5V
15
10
0.25V
0V
5
0
–2.0
0
NF, Ga vs. VG1S
–0.25V
–0.5V
–0.75V
–1.5
–1.0
–0.5
VG1S – Gate 1 source voltage [V]
0
NF, Ga vs. VDS
5
25
5
25
20
4
20
3
15
2
10
NF
5
1
–0.6
–0.2
–0.8
–0.4
0
VG1S – Gate 1 to source voltage [V]
3
15
2
10
NF
5
1
0
0
0
0.2
0
2
4
1
3
VDS – Drain to source voltage [V]
NF, Ga vs. ID
NF, Ga vs. f
5
25
3.0
30
20
Ga
15
3
10
2
NF
5
1
Ga – Associated gain [dB]
NF – Noise figure [dB]
(VDS = 2V, VG2S = 0.5V, ID = 2mA)
NF min – Minimum noise figure [dB]
(VDS = 2V, VG2S = 0.5V, f = 900MHz)
4
0
0
0
1
2
3 4 5 6 7 8
ID – Drain current [mA]
5
9
25
2.5
Ga
2.0
20
1.5
15
10
1.0
NFmin
5
0.5
0
0
10 11
0
–3–
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
Ga – Associated gain [dB]
0
–1.0
Ga
Ga – Associated gain [dB]
Ga
NF – Noise figure [dB]
NF – Noise figure [dB]
4
Ga – Associated gain [dB]
(VDS = 2V, VG2S = 0.5V, f = 900MHz)
SGM2013N
S-parameter vs. Frequency Characteristics (VDS = 2V, VG2S = 0.5V, ID = 2mA)
S11
S21
S12
S22
f
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.99
0.99
0.99
0.99
0.98
0.98
0.97
0.96
0.96
0.95
0.94
0.93
0.92
0.91
0.90
0.89
0.88
0.86
0.85
–4.3
–6.4
–8.5
–10.7
–12.8
–15.0
–17.2
–19.3
–21.5
–23.7
–26.0
–28.1
–30.3
–32.6
–34.9
–37.0
–39.0
–41.4
–43.6
1.01
1.01
1.01
1.01
1.01
1.01
1.01
1.01
1.01
1.00
1.00
1.00
0.99
0.99
0.99
0.98
0.98
0.97
0.97
172.8
169.3
165.9
162.2
158.7
155.1
151.5
147.8
144.3
140.6
137.2
133.6
130.0
126.5
122.8
119.4
115.7
112.1
108.8
0.00
0.00
0.00
0.00
0.00
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
87.0
85.4
84.7
83.0
81.9
80.3
78.9
77.8
76.9
75.8
75.0
73.8
72.9
72.8
72.5
71.5
70.9
69.7
68.6
0.98
0.98
0.98
0.98
0.98
0.98
0.98
0.98
0.97
0.97
0.96
0.96
0.96
0.96
0.96
0.96
0.95
0.95
0.95
–2.0
–3.1
–4.0
–5.2
–6.1
–7.2
–8.3
–9.7
–10.5
–11.7
–12.7
–13.8
–14.8
–15.9
–16.9
–18.0
–19.0
–20.0
–20.6
Noise Figure Characteristics (VDS = 2V, VG2S = 0.5V, ID = 2mA)
f
(MHz)
NFmin
(dB)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.76
0.80
0.85
0.90
0.96
1.01
1.06
1.11
1.16
1.21
1.26
1.31
1.36
1.41
1.45
1.51
1.56
1.61
1.67
Gamma Optimum
ANG
MAG
Rn
(Ω)
0.99
0.99
0.99
0.98
0.96
0.95
0.93
0.91
0.89
0.87
0.85
0.84
0.82
0.81
0.80
0.80
0.80
0.80
0.80
4.2
6.1
8.0
9.8
11.5
13.2
14.8
16.4
18.0
19.6
21.1
22.6
24.2
25.8
27.4
29.1
30.8
32.5
34.4
85.0
83.9
82.9
81.9
80.9
79.9
79.0
78.1
77.2
76.3
75.5
74.7
74.0
73.3
72.6
71.9
71.3
70.7
70.1
–4–
SGM2013N
Unit: mm
M-281
2.0 ± 0.2
1.3
(0.65)
3
0.9 ± 0.1
0.425
(0.65)
2
0 ± 0.1
2.1 ± 0.2
1.25 ± 0.1
Package Outline
1
4
+ 0.1
0.3 – 0.05
+ 0.1
0.1 – 0.01
+ 0.1
0.4 – 0.05
(0.65)
(0.6)
1.25
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
PACKAGE MATERIAL
EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
LEAD MATERIAL
COPPER
JEDEC CODE
PACKAGE WEIGHT
0.1g
SONY CODE
M-281
–5–