SLD1121VS 5mW Visible Laser Diode Description The SLD1121VS is a red laser diode designed for bar code readers and measuring instruments. This features a small package and lower power consumption. Features • Visible light (670nm typ.) • Small package (φ5.6mm) • Low operating current (Iop = 50mA typ.) • Fundamental transverse mode Applications • Bar code readers • Measuring instruments Structure • AlGaInP quantum well structure laser diode • PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO 5 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 Cinnection Diagram 3 mW V V °C °C Pin Configuration COMMON PD LD 2 2 1 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93821A81-PS SLD1121VS Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 40 60 mA Threshold current Ith Operating current Iop PO = 3mW 50 70 mA Operating voltage Vop PO = 3mW 2.2 2.8 V Wavelength λ PO = 3mW 660 670 680 nm 24 32 35 degree 7 11 15 degree ±80 µm ±3 degree ±3 degree 0.7 mW/mA Radiation angle Positional accuracy Perpendicular θ⊥ PO = 3mW Parallel θ// Position ∆X, ∆Y, ∆Z ∆φ// Angle PO = 3mW ∆φ⊥ Differential efficiency ηD PO = 3mW Astigmatism As | Z// – Z⊥ | Monitor current Imon PO = 3mW, VR = 5V Marking V Product name LOT No. –2– 0.15 0.45 32 0.08 0.20 µm 0.60 mA SLD1121VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Far field pattern (FFP) 6 TC = 0°C 25°C 50°C 5 PO = 3mW, TC = 25°C θ⊥ 25°C Relative radiant intensity PO – Optical power output [mW] TC = 0°C 50°C 4 Imon IF 3 2 θ// 1 0 0 20 40 60 80 IF – Forward current [mA] –60 –40 –20 0 20 40 60 Angle [degree] 0 0.25 0.5 Imon – Monitor current [mA] Monitor current vs. Temperature characteristics Threshold current vs. Temperature characteristics 0.4 200 PO = 3mW Ith – Threshold current [mA] Imon – Monitor current [mA] 100 10 –20 0.3 0.2 0.1 0 –20 –10 0 10 20 30 40 50 60 TC – Case temperature [°C] –3– 0 20 40 TC – Case temperature [°C] 60 SLD1121VS Temperature dependence of spectrum PO = 3mW Relative radiant intensity TC = 50°C TC = 25°C TC = 0°C 660 665 670 675 λ – Wavelength [nm] –4– 680 685 SLD1121VS Power dependence of spectrum TC = 25°C Relative radiant intensity PO = 5mW PO = 3mW PO = 1mW 665 670 675 λ – Wavelength [nm] –5– 680 SLD1121VS Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90° 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX 1.2 ± 0.1 Reference Plane 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN φ3.7 MAX φ1.0 MIN ∗1.26 0.25 Window Glass PCD φ2.0 M-274 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –6– 0.3g