SLD1122VS 5mW Visible Laser Diode Description The SLD1122VS is a red laser diode designed for laser pointers. This features a small package and lower power consumption. M-294 Features • Visible light (670nm typ.) • Small package (φ5.6mm) • Low operating current (Iop = 50mA typ.) • Low operating voltage (Vop = 2.4V max.) • Fundamental transverse mode Applications Laser pointers Structure • AlGaInP quantum well structure laser diode • PIN photo diode for optical power output monitor Recommended Operating Output 3mW Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO 5 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 Cinnection Diagram 3 mW V V °C °C Pin Configuration COMMON PD LD 2 2 1 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93822B79-PS SLD1122VS Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 40 60 mA Threshold current Ith Operating current Iop PO = 3mW 50 70 mA Operating voltage Vop PO = 3mW 2.2 2.4 V Wavelength λ PO = 3mW 660 670 685 nm 24 32 40 degree 7 11 15 degree ±150 µm ±4 degree ±4 degree 0.7 mW/mA Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ// PO = 3mW PO = 3mW ∆φ⊥ Differential efficiency ηD PO = 3mW Astigmatism As | Z// – Z⊥ | Monitor current Imon PO = 3mW, Vr = 5V –2– 0.15 0.45 32 0.08 0.20 µm 0.60 mA SLD1122VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Far field pattern (FFP) 6 Tc = 0°C 25°C 5 Po = 3mW, Tc = 25°C 25°C θ⊥ 50°C Relative radiant intensity Po – Optical power output [mW] Tc = 0°C 50°C 4 Imon IF 3 2 θ// 1 0 0 20 40 60 80 –60 –40 –20 IF – Forward current [mA] 0 40 20 60 Angle [degree] 0 0.25 0.5 Imon – Monitor current [mA] Threshold current vs. Temperature characteristics Monitor current vs. Temperature characteristics 0.4 200 100 Imon – Monitor current [mA] Ith – Threshold current [mA] Po = 3mW 10 0.3 0.2 0.1 0 –20 –10 0 10 20 30 40 50 60 –20 Tc – Case temperature [°C] 0 20 40 Tc – Case temperature [°C] –3– 60 SLD1122VS Temperature dependence of spectrum Po = 3mW Relative radiant intensity Tc = 50°C Tc = 25°C Tc = 0°C 660 665 670 675 λ – Wavelength [nm] –4– 680 685 SLD1122VS Power dependence of spectrum Tc = 25°C Relative radiant intensity Po = 5mW Po = 3mW Po = 1mW 665 670 675 λ – Wavelength [nm] –5– 680 SLD1122VS Package Outline Unit: mm M-294 Reference Slot 0.4 1.0 0.5 90° 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX 0.5 MIN 1.2 ± 0.1 Reference Plane 2 3 1 6.5 LD Chip & Photo Diode 2.6 MAX φ3.7 MAX φ1.0 MIN ∗1.26 0.25 Window Glass 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 SONY CODE PCD φ2.0 M-294 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –6– 0.3g