ETC QL65D6SA

QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65D6SA
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315-9, Chunheung-ri, Sungger-eup,
Chunan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65D6SA
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
2003. Rev 0
♦OVERVIEW
QL65D6SA is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices
such as Bar Code Reader.
♦APPLICATION
- Optical Leveler
- Laser Module
- Bar Code Reader
♦FEATURES
- Visible Light Output
:
λp = 650 nm
- Optical Power Output
:
5mW CW
- Package Type
:
TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Symbols
Optical Output Power
Laser Diode Reverse
Voltage
Photo Diode Reverse
Voltage
Values
Unit
P
5
mW
V
2
V
V
30
V
Operating Temperature
Topr
−10 ~ +60
°C
Storage Temperature
Tstg
−40 ~ +85
°C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Symbols
Min.
Typ. Max.
Unit
Condition
Optical Output Power
Po
-
5
-
mW
-
Threshold Current
Ith
-
30
45
mA
-
Operating Current
Iop
-
40
55
mA
Po=5mW
Slope Efficiency
SE
0.4
0.5
0.8
mW/mA
3~5 mW
Operating Voltage
Vop
-
2.2
2.6
V
Po=5mW
Lasing Wavelength
λp
650
655
660
nm
Po=5mW
θ 
7
8.5
10
deg
Po=5mW
θ⊥
26
28
32
deg
Po=5mW
∆θ 
-
-
±1.5
deg
Po=5mW
∆θ ⊥
-
-
±2.5
deg
Po=5mW
Im
0.1
0.2
0.5
mA
Po=5mW
K-LI
10
%
As
10
µm
-
±60
µm
Beam Divergence
Beam Angle
Monitor Current
KINK
Astigmatism
∆X, ∆Y, ∆Z
Optical Distance
-
PD DARK CURRENT
ID
5
10
nA
VR=10V
PD Capacitance
Ct
-5
-10
pF
Vrd=0.5V f=1MHZ
NOTICE : QL65D6SA to be operated on APC circuit.
The above product specifications are subject to change without notice.
♦EXAMPLE of REPRESENTATIVE CHARACTERISTICS
Optical Output Power vs. Foward Current
Output Power P [ mW]
5
25℃ 40℃ 60℃
30℃ 50℃
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
Forward Current IF [mA]
Wavelength vs. Temperature
Wavelength, λ [nm]
680
675
670
665
660
655
650
10
20
30
40
50
60
70
Temperature, Tc [`C]
Far Field Pattern
Relative Intensity
1
0.8
0.6
0.4
0.2
0
-50
-40
-30
-20
-10
0
Angle [deg]
10
20
30
40
50
Monitor currnet, Im [mA]
Monitor Current vs. Optical Output Power
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
Optical output power, Po [mW]
Operating Voltagr, Vop [V]
Operating Voltage vs. Temp
2.4
2.35
2.3
2.25
2.2
2.15
2.1
2.05
2
10
20
30
40
50
60
70
Temperature, Tc [V]
Threshold Current, Ith [mA]
Threshold Current vs. Temp
100
10
10
20
30
40
Temperature, Tc [`C]
50
60
70
♦PACKAGE DIMENSION
♦PACKING