SONY SLD302B

SLD302B
Block-type 200mW High Power Laser Diode
Description
The SLD302B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block.
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
Features
• Compact size
3 × 3 × 5mm block
• High power output Po = 200mW
• Hole for thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double hetero-type laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Recommended optical power output
• Reverse voltage
• Operating temperature
• Storage temperature
Po
200
Po
180
VR LD
2
Topr –10 to +50
Tstg –40 to +85
mW
mW
V
°C
°C
Pin Configuration
No.
Function
1
LD cathode
2
LD anode
1 LD cathode
2 LD anode
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E89104A81-PS
SLD302B
Electrical and Optical Characteristics
Item
(Tc = 25°C)
Symbol
Conditions
Min.
Typ.
Max.
Unit
150
200
mA
Threshold current
Ith
Operating current
Iop
PO = 180mW
400
500
mA
Operating voltage
Vop
PO = 180mW
1.9
3.0
V
Wavelength
λp
PO = 180mW
840
nm
Radiation angle Perpendicular to junction
(F. W. H. M.∗)
Parallel to junction
θ⊥
Positional
accuracy
Position
Angle
Differential efficiency
770
PO = 180mW
θ//
28
40
12
17
∆X
±300
∆Y, ∆Z
PO = 180mW
±100
∆φ⊥
ηD
±3
PO = 180mW
∗ F. W. H. M. : Full Width at Half Maximum
–2–
0.5
0.8
degree
µm
degree
mW/mA
SLD302B
Example of Representative Characteristics
Threshold current vs. Temperature characteristics
Optical power output vs. Forward current
1000
200
Ith – Threshold current [mA]
Po – Optical power output [mW]
Tc = –10°C
Tc = 0°C
Tc = 25°C
100
Tc = 50°C
500
100
–10
0
0
250
IF – Forward current [mA]
Tc = 25°C
Radiation intensity (optional scale)
Radiation intensity (optional scale)
40
Power depecdence of near field pattern
Tc = 25°C
(parallel to junction)
PO = 180mW
PO = 90mW
PO = 30mW
–20
10
20
30
Tc – Case temperature [°C]
500
Power dependence of far field pattern
–30
0
–10
0
10
Angle [degree]
20
PO = 180mW
PO = 150mW
PO = 100mW
PO = 75mW
PO = 50mW
PO = 25mW
50µm
30
Oscillation wavelength vs. Temperature characteristics
Differential efficiency vs. Temperature characteristics
830
1.5
820
ηD – Differential efficiency [mW/mA]
λp – Oscillation wavelength [nm]
PO = 180mW
810
800
790
780
–10
0
10
20
30
40
1.0
0.5
50
Tc – Case temperature [°C]
0
–10
0
10
20
30
Tc – Case temperature [°C]
–3–
40
50
50
SLD302B
Optical power output vs. Operating current
Power dependence of polarization ratio
3.0
80
Pulse width = 1µs
Duty = 10%
Tc = 23°C
Tc = 25°C
Po – Optical power output [W]
2.5
Polarization ratio
60
40
20
PULSE
2.0
1.5
1.0
CW
0.5
0
0
0
50
100
150
200
250
Pulse width dependence of COD∗ power
10
Duty = 10%
TC = 23°C
COD output [W]
5.0
1.0
CW
0.5
0.1
0.1
0.5
1.0
5.0
10
0
0.5
1.0
1.5
2.0
Iop – Operating current [A]
Po – Optical power output [mW]
50
100
Pulse width [µs]
∗ COD (Catastrophic Optical Damage)
–4–
2.5
SLD302B
Power Dependence of Wavelength
Relative radiant intensity
Tc = 25°C
Po = 80mW
Relative radiant intensity
Tc = 25°C
Po = 40mW
800
805
810
800
Wavelength [nm]
805
810
Wavelength [nm]
Relative radiant intensity
Tc = 25°C
Po = 160mW
Relative radiant intensity
Tc = 25°C
Po = 120mW
800
805
810
800
Wavelength [nm]
Relative radiant intensity
Tc = 25°C
Po = 200mW
800
805
805
Wavelength [nm]
810
Wavelength [nm]
–5–
810
SLD302B
Temperature Dependence of Wavelength (PO = 180mW)
Relative radiant intensity
Tc = 12°C
Relative radiant intensity
Tc = –6°C
805
815
825
805
Wavelength [nm]
815
825
Wavelength [nm]
Relative radiant intensity
Tc = 35°C
Relative radiant intensity
Tc = 23°C
805
815
825
805
Wavelength [nm]
Relative radiant intensity
Tc = 45°C
805
815
815
Wavelength [nm]
825
Wavelength [nm]
–6–
825
SLD302B
Package Outline
Unit: mm
M – 261
5.0 ± 0.1
3.0 ± 0.1
1.5
0.2
1.7
0.3
Ø1.5
for Thermistor
LD Chip
1.0
Ceramic
1.5
Contact Plate (LD Cathode)
0.2
1.8
3.0 ± 0.1
Body (LD Anode)
PACKAGE STRUCTURE
SONY CODE
M-261
PACKAGE WEIGHT
EIAJ CODE
JEDEC CODE
–7–
1g