VISHAY 15EWH06FN

New Product
VS-15EWH06FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
D-PAK (TO-252AA)
1
N/C
• Low forward voltage drop
3
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
IF(AV)
15 A
VR
600 V
VF at IF
2.1 V
trr (typ.)
22 ns
TJ max.
175 °C
Diode variation
Single die
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 130 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
120
IFM
TC = 130 °C, f = 20 kHz, d = 50 %
Peak repetitive forward current
Operating junction and storage temperatures
TJ, TStg
A
30
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
1.6
2.1
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
1.2
1.6
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Document Number: 93237
Revision: 05-Apr-11
For technical questions within your region, please contact one of the following:
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15EWH06FN-M3
Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
22
30
TJ = 25 °C
-
36
-
TJ = 125 °C
-
75
-
-
4.8
-
-
7.2
-
TJ = 25 °C
-
90
-
TJ = 125 °C
-
300
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
1.4
1.8
Thermal resistance,
junction to ambient per leg
RthJA
-
-
70
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 390 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
°C/W
Approximate weight
Marking device
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2
Case style D-PAK (TO-252AA)
0.3
g
0.01
oz.
15EWH06FN
For technical questions within your region, please contact one of the following:
Document Number: 93237
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Revision: 05-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15EWH06FN-M3
1000
100
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 25 °C
TJ = 175 °C
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Hyperfast Rectifier, 15 A FRED Pt® Vishay Semiconductors
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.1
0.2
0.7
1.2
1.7
2.2
0
2.7
VF - Forward Voltage Drop (V)
93237_01
100
300
400
500
600
VR - Reverse Voltage (V)
93237_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
200
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
10
1
0
93237_03
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
93237_04
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93237
Revision: 05-Apr-11
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15EWH06FN-M3
100
180
90
170
80
160
70
DC
150
140
130
50
40
Square wave (D = 0.50)
Rated VR applied
30
See note (1)
10
20
120
110
0
5
10
15
20
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
600
30
500
25
400
RMS limit
Qrr (nC)
Average Power Loss (W)
35
20
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10
5
IF = 15 A, TJ = 125 °C
300
200
100
IF = 15 A, TJ = 25 °C
0
0
93237_06
5
10
15
20
1000
dIF/dt (A/μs)
93237_07
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
15
IF = 15 A, TJ = 25 °C
0
100
25
IF(AV) - Average Forward Current (A)
93237_05
IF = 15 A, TJ = 125 °C
60
trr (ns)
Allowable Case Temperature (°C)
Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt®
0
100
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
93237_08
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
Document Number: 93237
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Revision: 05-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15EWH06FN-M3
Hyperfast Rectifier, 15 A FRED Pt® Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93237
Revision: 05-Apr-11
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15EWH06FN-M3
Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS-
15
E
W
H
06
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (15 = 15 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = Single diode
4
-
Package identifier:
5
-
H = Hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = Tube
W = D-PAK
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-15EWH06FN-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-15EWH06FNTR-M3
2000
2000
13" diameter reel
VS-15EWH06FNTRL-M3
3000
3000
13" diameter reel
VS-15EWH06FNTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95385
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For technical questions within your region, please contact one of the following:
Document Number: 93237
[email protected], [email protected],
Revision: 05-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
2
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
MILLIMETERS
INCHES
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
2.29 BSC
MIN.
MAX.
0.090 BSC
b
0.64
0.89
0.025
0.035
L
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.74 BSC
L2
0.51 BSC
NOTES
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000