SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK48, 2CK48A, 2CK48B SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: 1.0 (25.4) MIN. 250oC/10S/9.5mm lead length at 5 lbs tension .120 (3.0) .200 (5.1) .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA 1.0 (25.4) MIN. • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS Reverse Voltage Peak Reverse Voltage Forward Current (average) Repetitive Forward Peak Current Forward Voltage (IF=10mA) Reverse Current (V=VR) SYMBOL 2CK48 VR VRM IO IFRM VF IR1 IR2 35 40 2CK48A 2CK48B 60 70 150 450 1 1 20 3 Reverse Current (V=VR,TJ=100oC) Capacitance (Note 1) Ct 4 Reverse Recovery Time (Note 2) trr 5 Thermal Resistance Rθ(ja) 0.35 (junction to ambient) (Note 3) TSTG,TJ -55 +175 Operating Junction and Storage Temperature Range Note 1. VR=1V, f=1 MHz 2. IF=10mA to IR=10mA, Irr=1mA 3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. UNITS 90 100 V V mA mA V µA µA pF nS o C/mW o C http://www.sse-diode.com