SSE XR-85

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
TECHNICAL
SPECIFICATION
REVERSE VOLTAGE: 20V
FORWARD CURRENT: 100mA
FEATURES
DO - 34
• Small glass structure ensures high reliability
• Low leakage
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
UNITS
Reverse Voltage
VR
20
V
Peak Reverse Voltage
VRM
35
V
Forward Current (average)
Forward Voltage (IF=10mA)
IO
VF
100
1
mA
V
IR1
100
nA
Reverse Current (VR=20V,TJ=100 C)
IR2
10
µA
Capacitance
(Note 1)
Forward Differential Resistor (IF=10mA, f=100MHz)
Ct
1.5
pF
rF
0.6
Ω
Rθ(ja)
0.35
Reverse Current (VR=20V)
o
Thermal Resistance
(junction to ambient)
(Note 2)
TSTG,TJ
Operating Junction and Storage Temperature Range
-55 ~ +150
Notes:
1: VR=10V, f=1 MHz
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
o
C/mW
o
C
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