SHANGHAI SUNRISE ELECTRONICS CO., LTD. XR-85 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 20V FORWARD CURRENT: 100mA FEATURES DO - 34 • Small glass structure ensures high reliability • Low leakage • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS SYMBOL VALUE UNITS Reverse Voltage VR 20 V Peak Reverse Voltage VRM 35 V Forward Current (average) Forward Voltage (IF=10mA) IO VF 100 1 mA V IR1 100 nA Reverse Current (VR=20V,TJ=100 C) IR2 10 µA Capacitance (Note 1) Forward Differential Resistor (IF=10mA, f=100MHz) Ct 1.5 pF rF 0.6 Ω Rθ(ja) 0.35 Reverse Current (VR=20V) o Thermal Resistance (junction to ambient) (Note 2) TSTG,TJ Operating Junction and Storage Temperature Range -55 ~ +150 Notes: 1: VR=10V, f=1 MHz 2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. o C/mW o C http://www.sse-diode.com