SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB85 SILICON SCHOTTKY DETECTING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 50V FORWARD CURRENT: 150mA FEATURES DO - 34 • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: 1.0 (25.4) MIN. 250oC/10S/9.5mm lead length at 5 lbs tension .085 (2.2) .120 (3.0) MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any 1.0 (25.4) MIN. DO - 35 1.0 (25.4) MIN. .050 (1.27) .075 (1.91) DIA. .120 (3.0) .200 (5.1) .018 (0.46) .022 (0.56) DIA. 1.0 (25.4) MIN. .060 (1.5) .090 (2.3) DIA. .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS SYMBOL Reverse Voltage Forward Current (peak) Forward Current (D.C.) Forward Voltage (D.C.) Reverse Current (VR=30V) IF=10mA IF=100mA VALUE Typ. Max. 50 150 30 0.4 0.8 3 VR IFM IF VF1 VF2 IR Capacitance (Note 1) Ct Detection Effectiveness (Note 2) Operating Junction and Storage TJ,TSTG Temperature Range Notes: 1. VR=10V, f=1MHz 2. Vm=3V(peak), f=30MHz, RL=3.9KΩ, Ct=10pF. 6 60% -55 +125 UNITS V mA mA V V µA pF o C http://www.sse-diode.com