SSE DB3

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
DB3
BIDIRECTIONAL
TRIGGER DIODE
TECHNICAL
SPECIFICATION
BREAKOVER VOLTAGE: 32V
POWER: 150mW
FEATURES
DO - 35
• VBO: 26 ~ 36V version
• Low breakover current
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Mounting position: Any
1.0 (25.4)
MIN.
.060 (1.5)
.090 (2.3) DIA.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Rating at 25oC ambient temperature unless otherwise specified)
RATINGS
Breakover Voltage *
Breakover Voltage Symmetry
Dynamic Breakover Voltage *
Output Voltage *
Breakover Current *
Rise Time *
Leakage Current *
Power Dissipation on Printed Circuit
Repetitive Peak on-state Current
TEST
CONDITION
C=22nF **
C=22nF **
SYMBOL
VBO
|+ VBO|-|-VBO|
C=22nF **
|∆V ± |
VO
IBO
VR=0.5VBO
tr
IB
(Note 1)
o
Ta=65 C
tp=20µS
f=100Hz
Min.
26
-3
VALUE
Typ.
Max.
32
36
3
UNITS
V
V
5
5
V
V
µA
µS
100
1.5
10
µA
Pd
150
mW
ITRM
2
A
Rθ(ja)
Thermal
Junction to Ambient
Rθ(jl)
Resistances
Junction to Lead
Operating Junction and Storage
TJ,TSTG
Temperature Range
*
: Electrical characteristic applicable in forward and reverse directions.
**
: Connected in parallel with the devices.
400
150
-40
125
o
C/W
o
C
Note:
1. IF from IBO to 10mA.
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