8 Megabit (512K x 16-Bit) Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical) - Block Erase Time: 18 ms (typical) - Chip Erase Time: 70 ms (typical) - Word Program time: 14 µs (typical) - Chip Rewrite Time: 8 seconds (typical) • Automatic Write Timing - Internal VPP Generation • End of Write Detection - Toggle Bit - Data# Polling • CMOS I/O Compatibility • VDDQ Power Supply to Support 5V I/O for SST39VF800Q - VDDQ not available on SST39VF800 • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention • Low Power Consumption: - Active Current: 15 mA (typical) - Standby Current: 3 µA (typical) - Auto Low Power Mode: 3 µA (typical) • Small Sector Erase Capability (256 sectors) - Uniform 2 KWord sectors • Block Erase Capability (16 blocks) - Uniform 32 KWord blocks • Fast Read Access Time: - 70 and 90 ns PRODUCT DESCRIPTION The SST39VF800Q/VF800 devices are 512K x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800Q/VF800 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF800Q/ VF800 conform to JEDEC standard pinouts for x16 memories. Featuring high performance word program, the SST39VF800Q/VF800 devices provide a typical word program time of 14 µsec. The entire memory can typically be erased and programmed word-by-word in 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39VF800Q/VF800 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF800Q/VF800 are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39VF800Q/VF800 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39VF800Q/VF800 significantly improve performance and reliability, while lowering power consumption. The SST39VF800Q/VF800 in- • JEDEC Standard - Flash EEPROM Pinouts and command sets • Packages Available - 48-Pin TSOP (12mm x 20mm) - 6 x 8 Ball TFBGA herently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39VF800Q/ VF800 also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/ Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39VF800Q/VF800 are offered in 48-pin TSOP and 48-pin TFBGA packages. See Figures 1 and 2 for pinouts. Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. © 1999 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. 343-04 2/99 These specifications are subject to change without notice. 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information The SST39VF800Q/VF800 also have the Auto Low Power mode which puts the device in a near standby mode after data has been accessed with a valid read operation. This reduces the IDD active read current from typically 15 mA to typically 3 µA. The Auto Low Power mode reduces the typical IDD active read current to the range of 1 mA/MHz of read cycle time. The device exits the Auto Low Power mode with any address transition or control signal transition used to initiate another read cycle, with no access time penalty. byte command sequence with Block Erase command (50H) and block address (BA) in the last bus cycle. The address lines A15-A18 are used to determine the block address. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The end of Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 9 and 10 for timing waveforms. Any commands issued during the Sector or Block Erase operation are ignored. Read The Read operation of the SST39VF800Q/VF800 is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 3). Chip Erase Operation The SST39VF800Q/VF800 provide a Chip Erase operation, which allows the user to erase the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The Chip Erase operation is initiated by executing a sixbyte command sequence with Chip Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 8 for timing diagram, and Figure 19 for the flowchart. Any commands issued during the Chip Erase operation are ignored. Word Program Operation The SST39VF800Q/VF800 are programmed on a wordby-word basis. The Program operation consists of three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load word address and word data. During the Word Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed within 20 µs. See Figures 4 and 5 for WE# and CE# controlled Program operation timing diagrams and Figure 16 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands issued during the internal Program operation are ignored. Write Operation Status Detection The SST39VF800Q/VF800 provide two software means to detect the completion of a write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The end of write detection mode is enabled after the rising edge of WE#, which initiates the internal program or erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid. Sector/Block Erase Operation The Sector/Block Erase operation allows the system to erase the device on a sector-by-sector (or block-by-block) basis. The SST39VF800Q/VF800 offer both small Sector Erase and Block Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block Erase mode is based on uniform block size of 32 KWord. The Sector Erase operation is initiated by executing a six-bytecommand sequence with Sector Erase command (30H) and sector address (SA) in the last bus cycle. The address lines A11-A18 are used to determine the sector address. The Block Erase operation is initiated by executing a six© 1999 Silicon Storage Technology, Inc. Data# Polling (DQ7) When the SST39VF800Q/VF800 are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is 2 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Common Flash Memory Interface (CFI) The SST39VF800Q/VF800 also contain the CFI information to describe the characteristics of the device. In order to enter the CFI Query mode, the system must write threebyte sequence, same as product ID entry command with 98H (CFI Query command) to address 5555H in the last byte sequence. Once the device enters the CFI Query mode, the system can read CFI data at the addresses given in tables 5 through 7. The system must write the CFI Exit command to return to Read mode from the CFI Query mode. then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector, Block or Chip Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 6 for Data# Polling timing diagram and Figure 17 for a flowchart. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 1’s and 0’s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector, Block or Chip Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Toggle Bit timing diagram and Figure 17 for a flowchart. Product Identification The Product Identification mode identifies the devices as the SST39VF800Q, SST39VF800 and manufacturer as SST. This mode may be accessed by hardware or software operations. The hardware operation is typically used by a programmer to identify the correct algorithm for the SST39VF800Q/VF800. Users may wish to use the Software Product Identification operation to identify the part (i.e., using the device code) when using multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 11 for the Software ID Entry and Read timing diagram and Figure 18 for the ID Entry command sequence flowchart. TABLE 1: PRODUCT IDENTIFICATION TABLE Data Protection The SST39VF800Q/VF800 provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Data Manufacturer’s Code 0000H 00BFH Device Code 0001H 2781H 343 PGM T1.0 Product Identification Mode Exit/CFI Mode Exit In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read operation. This command may also be used to reset the device to the Read mode after any inadvertent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. Please note that the Software ID Exit/CFI Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 13 for timing waveform and Figure 18 for a flowchart. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Software Data Protection (SDP) The SST39VF800Q/VF800 provide the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte sequence. The SST39VF800Q/VF800 devices are shipped with the software data protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode within TRC. The contents of DQ15-DQ8 are “Don’t Care” during any SDP command sequence. © 1999 Silicon Storage Technology, Inc. Address VDDQ - I/O Power Supply This feature is available only on the SST39VF800Q. This pin functions as power supply pin for input/output buffers. It should be tied to VDD (2.7-3.6V) in a 3.0V-only system. It should be tied to a 5.0V±10% (4.5-5.5V) power supply in a mixed voltage system environment where flash memory has to be interfaced with 5V system chips. The VDDQ pin is not offered on the SST39VF800, instead it is a No Connect pin. 3 343-04 2/99 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FUNCTIONAL BLOCK DIAGRAM 8,388,608 bit EEPROM Cell Array X-Decoder A18 - A0 Address Buffer & Latches Y-Decoder CE# I/O Buffers and Data Latches Control Logic OE# WE# DQ15 - DQ0 VDDQ 343 ILL B1.0 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard Pinout Top View Die Up SST39VF800Q A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 VDDQ VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Standard Pinout Top View Die Up SST39VF800 343 ILL1.0 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 343 ILL1a.0 FIGURE 1: PIN ASSIGNMENTS FOR 48-PIN TSOP PACKAGES A B C D E F A B C D E F TOP VIEW TOP VIEW 1 1 A3 A7 NC WE# A9 A13 2 A4 A17 NC NC A8 A12 3 A2 A6 A18 NC A10 A14 A1 A5 NC NC A11 A15 NC WE# A9 A13 A4 A17 NC NC A8 A12 A2 A6 A18 NC A10 A14 A0 DQ0 DQ2 DQ5 DQ7 A16 A1 A5 NC NC A11 A15 A0 DQ0 DQ2 DQ5 DQ7 A16 CE# DQ8 DQ10 DQ12 DQ14 NC 4 5 5 6 8 A7 3 4 7 A3 2 6 CE# DQ8 DQ10 DQ12 DQ14 VDDQ 7 OE# DQ9 DQ11 VDD DQ13 DQ15 VSS DQ1 DQ3 DQ4 DQ6 8 VSS OE# DQ9 DQ11 VDD DQ13 DQ15 VSS DQ1 SST39VF800Q DQ3 DQ4 DQ6 VSS SST39VF800 343 ILL2.3 343 ILL2a.2 FIGURE 2: PIN ASSIGNMENTS FOR 48-BALL TFBGA © 1999 Silicon Storage Technology, Inc. 4 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information TABLE 2: PIN DESCRIPTION Symbol Pin Name A18-A0 Address Inputs DQ15-DQ0 Data Input/output CE# OE# WE# VDD VDDQ Chip Enable Output Enable Write Enable Power Supply I/O Power Supply Vss NC Functions To provide memory addresses. During sector erase A18-A11 address lines will select the sector. During block erase A18-A15 address lines will select the block. To output data during read cycles and receive input data during write cycles. Data is internally latched during a write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the write operations. To provide 3-volt supply (2.7-3.6V) Supplies power for input/output buffers. It should be either tied to VDD (2.7 - 3.6V) for 3V I/O or to a 5.0V (4.5 - 5.5V) power supply to support 5V I/O. (Not offered on SST39VF800 device, instead it is a NC) Ground No Connection Unconnected pins. 343 PGM T2.0 TABLE 3: OPERATION MODES SELECTION Mode CE# OE# Read VIL VIL Program VIL VIH Erase VIL VIH Standby Write Inhibit Product Identification Hardware Mode Software Mode 1 2 3 4 5 6 7 WE# VIH VIL VIL A9 AIN AIN X DQ DOUT DIN X VIH X X X VIL X X X VIH X X X High Z High Z/ DOUT High Z/ DOUT VIL VIL VIH VH Manufacturer Code (00BF) Device Code (2781) VIL VIL VIH AIN Address AIN AIN Sector or block address, XXh for chip erase X X X A18 - A1 = VIL, A0 = VIL A18 - A1 = VIL, A0 = VIH See Table 4 8 9 10 11 343 PGM T3.0 12 13 14 15 16 © 1999 Silicon Storage Technology, Inc. 5 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence Word Program Sector Erase Block Erase Chip Erase Software ID Entry CFI Query Entry Software ID Exit/ CFI Exit Software ID Exit/ CFI Exit 1st Bus Write Cycle Addr(1) Data 2nd Bus Write Cycle Addr(1) Data 3rd Bus Write Cycle Addr(1) Data 4th Bus Write Cycle Addr(1) Data 5th Bus Write Cycle Addr(1) Data 6th Bus Write Cycle Addr(1) Data 5555H 5555H 5555H 5555H 5555H 5555H XXH AAH AAH AAH AAH AAH AAH F0H 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 55H 55H 55H 55H 55H 55H 5555H 5555H 5555H 5555H 5555H 5555H A0H 80H 80H 80H 90H 98H WA(3) 5555H 5555H 5555H 2AAAH 2AAAH 2AAAH SAx(2) BAx(2) 5555H 5555H AAH 2AAAH 55H 5555H F0H Data AAH AAH AAH 55H 55H 55H 30H 50H 10H 343 PGM T4.0 Notes: (1) (2) (3) (4) (5) Address format A14-A0 (Hex), Addresses A15, A16, A17 and A18 are “Don’t Care” for Command sequence. SAx for Sector Erase; uses A18-A11 address lines BAx, for Block Erase; uses A18-A15 address lines WA = Program word address Both Software ID Exit operations are equivalent DQ15 - DQ8 are “Don’t Care” for Command sequence Notes for Software ID Entry Command Sequence 1. With A18 -A1 =0; SST Manufacturer Code = 00BFH, is read with A0 = 0, SST39VF800Q/VF800 Device Code = 2781H, is read with A0 = 1. 2. The device does not remain in Software Product ID Mode if powered down. TABLE 5: CFI QUERY IDENTIFICATION STRING1 Address Data Data 10H 0051H 11H 0052H Query Unique ASCII string “QRY” 12H 0059H 13H 0001H Primary OEM command set 14H 0007H 15H 0000H Address for Primary Extended Table 16H 0000H 17H 0000H Alternate OEM command set (00H = none exists) 18H 0000H 19H 0000H Address for Alternate OEM extended Table (00H = none exits) 1AH 0000H Note 1: Refer to CFI publication 100 for more details. © 1999 Silicon Storage Technology, Inc. 343 PGM T5.1 6 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information TABLE 6: SYSTEM INTERFACE INFORMATION Address Data Data 1BH 0027H VDD Min. (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1CH 0036H VDD Max. (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1DH 0000H VPP min. (00H = no VPP pin) 1EH 0000H VPP max. (00H = no VPP pin) 1FH 0004H Typical time out for Word Program 2N µs (24 = 16 µs) 20H 0000H Typical time out for min. size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector/Block Erase 2N ms (24 = 16 ms) 22H 0006H Typical time out for Chip Erase 2N ms (26 = 64 ms) 23H 24H 25H 0001H 0000H 0001H 26H 0001H 1 2 3 4 Maximum time out for Word Program 2N times typical (21 x 24 = 32 µs) Maximum time out for buffer program 2N times typical Maximum time out for individual Sector/Block Erase 2N times typical (21 x 24 = 32 ms) Maximum time out for Chip Erase 2N times typical (21 x 26 = 128 ms) 5 6 343 PGM T6.2 7 TABLE 7: DEVICE GEOMETRY INFORMATION Address Data Data 27H 0014H Device size = 2N Bytes (14H = 20; 220 = 1M Bytes) 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of byte in multi-byte write = 2N (00H = not supported) 2BH 0000H 2CH 0002H Number of Erase Sector/Block sizes supported by device 2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size) 2EH 0000H y = 255 + 1 = 256 sectors (00FFH = 255) 2FH 0010H 30H 0000H z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16) 31H 000FH Block Information (y + 1 = Number of blocks; z x 256B = block size) 32H 0000H y = 15 + 1 = 16 blocks (000FH = 15) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256) 343 PGM T7.2 8 9 10 11 12 13 14 15 16 © 1999 Silicon Storage Technology, Inc. 7 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias ................................................................................................................. -55°C to +125°C Storage Temperature ...................................................................................................................... -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential ...................................................................... -0.5V to VDDQ (2) + 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential .................................................. -1.0V to VDDQ (2) + 1.0V Voltage on A9 Pin to Ground Potential ................................................................................................ -0.5V to 13.2V Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C Output Short Circuit Current(1) ................................................................................................................................................................. 50 mA Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time. (2) The absolute maximum stress ratings for SST39VF800 are referenced to V . DD OPERATING RANGE Range Ambient Temp Commercial 0 °C to +70 °C Industrial -40 °C to +85 °C VDD 2.7 - 3.6V 2.7 - 3.6V VDDQ VDD or 4.5 - 5.5V VDD or 4.5 - 5.5V AC CONDITIONS OF TEST Input Rise/Fall Time ......... 10 ns Output Load ..................... CL = 100 pF See Figures 14 and 15 © 1999 Silicon Storage Technology, Inc. 8 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information TABLE 8: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V AND VDDQ = VDD OR 4.5V - 5.5V Limits Symbol Parameter Min Max Units Test Conditions IDD ISB IALP ILI ILO VIL VILC VIH VIHC VOL VOH VH IH Power Supply Current Read Program and Erase Standby VDD Current Auto Low Power Current Input Leakage Current Output Leakage Current Input Low Voltage Input Low Voltage (CMOS) 0.3 Input High Voltage 2.0 Input High Voltage (CMOS) VDD-0.3 Output Low Voltage Output High Voltage 2.4 Supervoltage for A9 pin 11.4 Supervoltage Current for A9 pin 20 25 10 10 1 1 0.8 0.4 12.6 200 1 CE#=OE#=VIL,WE#=VIH , all I/Os open, Address input = VIL/VIH, at f=1/TRC Min. CE#=WE#=VIL, OE#=VIH, VDD=VDD Max. CE#=VIHC, VDD = VDD Max. CE#=VIHC, VDD = VDD Max. VIN =GND to VDD, VDD = VDD Max. VOUT =GND to VDD, VDD = VDD Max. VDD = VDD Min. VDD = VDD Max. VDD = VDD Max. VDD = VDD Max. IOL = 100 µA, VDD = VDD Min. IOH = -100 µA, VDD = VDD Min. CE# = OE# =VIL, WE# = VIH CE# = OE# = VIL, WE# = VIH, A9 = VH Max. mA mA µA µA µA µA V V V V V V V µA 2 3 4 5 6 7 343 PGM T9.1 TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter TPU-READ(1) TPU-WRITE(1) Power-up to Read Operation Power-up to Program/Erase Operation Minimum Units 100 100 µs µs 8 9 343 PGM T10.0 TABLE 10: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open) Parameter Description Test Condition (1) CI/O CIN (1) Maximum I/O Pin Capacitance VI/O = 0V 12 pF Input Capacitance VIN = 0V 6 pF 11 343 PGM T11.1 Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification (1) NEND TDR(1) VZAP_HBM(1) VZAP_MM(1) ILTH(1) Endurance Data Retention ESD Susceptibility Human Body Model ESD Susceptibility Machine Model Latch Up Units Test Method 10,000 100 1000 Cycles Years Volts JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 200 Volts JEDEC Standard A115 100 + IDD mA 14 15 16 JEDEC Standard 78 Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 9 12 13 343 PGM T12.1 © 1999 Silicon Storage Technology, Inc. 10 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information AC CHARACTERISTICS TABLE 12: SST39VF800Q/VF800 READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V SST39VF800Q/VF800-70 SST39VF800Q/VF800-90 Symbol Parameter Min Max Min Max TRC Read Cycle time 70 90 TCE Chip Enable Access Time 70 90 TAA Address Access Time 70 90 TOE Output Enable Access Time 30 40 (1) TCLZ CE# Low to Active Output 0 0 (1) TOLZ OE# Low to Active Output 0 0 TCHZ(1) CE# High to High-Z Output 20 30 (1) TOHZ OE# High to High-Z Output 20 30 (1) TOH Output Hold from Address Change 0 0 Units ns ns ns ns ns ns ns ns ns 343 PGM T13.0 TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter TBP Word Program time TAS Address Setup Time TAH Address Hold Time TCS WE# and CE# Setup Time TCH WE# and CE# Hold Time TOES OE# High Setup Time TOEH OE# High Hold Time TCP CE# Pulse Width TWP WE# Pulse Width TWPH (1) WE# Pulse Width High TCPH (1) CE# Pulse Width High TDS Data Setup Time TDH (1) Data Hold Time TIDA (1) Software ID Access and Exit Time TSE Sector Erase TBE Block Erase TSCE Chip Erase Min Max 20 0 30 0 0 0 10 40 40 30 30 30 0 150 25 25 100 Units µs ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms 343 PGM T14.1 Note 1: This parameter is measured only for initial qualification and after the design or process change that could affect this parameter. © 1999 Silicon Storage Technology, Inc. 10 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 1 TAA TRC 2 ADDRESS A18-0 TCE CE# 3 TOE OE# 4 TOHZ TOLZ VIH WE# TCLZ HIGH-Z DQ15-0 DATA VALID 5 TCHZ TOH HIGH-Z DATA VALID 6 343 ILL3.0 7 FIGURE 3: READ CYCLE TIMING DIAGRAM 8 9 INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESS A18-0 2AAA 5555 10 ADDR TDH TWP 11 WE# TAS TDS TWPH 12 OE# TCH 13 CE# TCS DQ15-0 XXAA SW0 XX55 XXA0 SW1 SW2 14 DATA WORD (ADDR/DATA) 343 ILL4.0 15 16 FIGURE 4: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM © 1999 Silicon Storage Technology, Inc. 11 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESS A18-0 2AAA 5555 ADDR TDH TCP CE# TAS TDS TCPH OE# TCH WE# TCS DQ15-0 XXAA XX55 XXA0 SW0 SW1 SW2 DATA WORD (ADDR/DATA) 343 ILL5.0 FIGURE 5: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM ADDRESS A18-0 TCE CE# TOES TOEH OE# TOE WE# DQ7 DATA DATA# DATA# DATA 343 ILL6.1 FIGURE 6: DATA# POLLING TIMING DIAGRAM © 1999 Silicon Storage Technology, Inc. 12 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 1 ADDRESS A18-0 2 TCE CE# TOES TOE TOEH 3 OE# 4 WE# 5 DQ6 6 TWO READ CYCLES WITH SAME OUTPUTS 343 ILL7.1 7 FIGURE 7: TOGGLE BIT TIMING DIAGRAM 8 9 TSCE SIX-BYTE CODE FOR CHIP ERASE ADDRESS A18-0 5555 2AAA 5555 5555 2AAA 10 5555 11 CE# 12 OE# TWP 13 WE# DQ7-0 AA 55 80 AA 55 10 SW0 SW1 SW2 SW3 SW4 SW5 14 343 ILL8.0 15 Note: The device also supports CE# controlled chip erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) 16 FIGURE 8: WE# CONTROLLED CHIP ERASE TIMING DIAGRAM © 1999 Silicon Storage Technology, Inc. 13 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information TBE SIX-BYTE CODE FOR BLOCK ERASE 5555 ADDRESS A18-0 2AAA 5555 5555 2AAA BAX CE# OE# TWP WE# DQ7-0 AA 55 80 AA 55 50 SW0 SW1 SW2 SW3 SW4 SW5 343 ILL17.0 Note: The device also supports CE# controlled block erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) BAX = Block Address FIGURE 9: WE# CONTROLLED BLOCK ERASE TIMING DIAGRAM TSE SIX-BYTE CODE FOR SECTOR ERASE 5555 ADDRESS A18-0 2AAA 5555 5555 2AAA SAX CE# OE# TWP WE# DQ7-0 AA 55 80 AA 55 30 SW0 SW1 SW2 SW3 SW4 SW5 343 ILL18.0 Note: The device also supports CE# controlled sector erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) SAX = Sector Address FIGURE 10: WE# CONTROLLED SECTOR ERASE TIMING DIAGRAM © 1999 Silicon Storage Technology, Inc. 14 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 1 THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY 5555 ADDRESS A14-0 2AAA 5555 0000 2 0001 CE# 3 OE# 4 TIDA TWP 5 WE# TWPH DQ15-0 XXAA SW0 XX55 TAA XX90 SW1 00BF 6 2781 SW2 343 ILL9.1 7 8 FIGURE 11: SOFTWARE ID ENTRY AND READ 9 THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A14-0 5555 2AAA 10 5555 11 CE# 12 OE# TIDA TWP 13 WE# TWPH DQ15-0 XXAA SW0 XX55 SW1 14 TAA XX98 15 SW2 343 ILL20.1 16 FIGURE 12: CFI QUERY ENTRY AND READ © 1999 Silicon Storage Technology, Inc. 15 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A14-0 DQ7-0 5555 2AAA AA 5555 55 F0 TIDA CE# OE# TWP WE# T WHP SW0 SW1 SW2 343 ILL10.0 FIGURE 13: SOFTWARE ID EXIT/CFI EXIT © 1999 Silicon Storage Technology, Inc. 16 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information VIHT VHT INPUT 1 VHT REFERENCE POINTS OUTPUT VLT VLT 2 VILT 343 ILL11.0 AC test inputs are driven at VIHT (2.4 V) for a logic “1” and VILT (0.4 V) for a logic “0”. Measurement reference points for inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Inputs rise and fall times (10% ↔ 90%) are <10 ns. Note: VHT–VHIGH Test VLT–VLOW Test VIHT–VINPUT HIGH Test VILT–VINPUT LOW Test 3 4 5 FIGURE 14: AC INPUT/OUTPUT REFERENCE WAVEFORMS 6 7 TEST LOAD EXAMPLE 8 VDD TO TESTER 9 RL HIGH 10 TO DUT 11 CL RL LOW 12 13 343 ILL12.0 14 FIGURE 15: A TEST LOAD EXAMPLE 15 16 © 1999 Silicon Storage Technology, Inc. 17 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Start Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Load Word Address/Word Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 343 ILL13.1 FIGURE 16: WORD PROGRAM ALGORITHM © 1999 Silicon Storage Technology, Inc. 18 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Internal Timer Toggle Bit Data# Polling Program/Erase Initiated Program/Erase Initiated Program/Erase Initiated 1 2 3 4 Read DQ7 Read word Wait TBP, TSCE, TSE or TBE 5 Read same word Program/Erase Completed No Is DQ7 = true data? 6 Yes 7 No Does DQ6 match? Program/Erase Completed 8 Yes 9 Program/Erase Completed 343 ILL14.1 10 11 12 13 FIGURE 17: WAIT OPTIONS 14 15 16 © 1999 Silicon Storage Technology, Inc. 19 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information CFI Query Entry Software Product ID Entry Command Sequence Command Sequence Software ID Exit/CFI Exit Command Sequence Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 Write data: XXF0 Address: XX Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA Wait TIDA Write data: XX98 Address: 5555 Write data: XX90 Address: 5555 Write data: XXF0 Address: 5555 Return to normal operation Wait TIDA Wait TIDA Wait TIDA Read CFI data Read Software ID Return to normal operation 343 ILL15.0 FIGURE 18: SOFTWARE PRODUCT ID/CFI COMMAND FLOWCHARTS © 1999 Silicon Storage Technology, Inc. 20 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Chip Erase Command Sequence Sector Erase Command Sequence Block Erase Command Sequence 1 Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 2 3 Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA Write data: XX80 Address: 5555 Write data: XX80 Address: 5555 Write data: XX80 Address: 5555 4 5 6 Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA Write data: XX55 Address: 2AAA 7 8 9 Write data: XX10 Address: 5555 Write data: XX30 Address: SAX Write data: XX50 Address: BAX 10 11 Wait TSCE Wait TSE Wait TBE Chip erased to FFH Sector erased to FFH Block erased to FFH 12 13 14 343 ILL16.1 15 FIGURE 19: ERASE COMMAND SEQUENCE 16 © 1999 Silicon Storage Technology, Inc. 21 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Device SST39VF800Q Speed Suffix1 Suffix2 - XXX XX XX Package Modifier K = 48 leads Numeric = Die modifier Package Type E = TSOP (12mm x 20mm) B = TFBGA (0.8 mm pitch; 8mm x 10mm) U = Unencapsulated die Temperature Range C = Commercial = 0° to 70°C I = Industrial = -40° to 85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 70 = 70 ns, 90 = 90 ns Version Q = VDDQ pin for I/O power supply Voltage V = 2.7-3.6V SST39VF800Q Valid combinations SST39VF800Q-70-4C-EK SST39VF800Q-70-4C-BK SST39VF800Q-90-4C-EK SST39VF800Q-90-4C-BK SST39VF800Q-70-4I-EK SST39VF800Q-90-4I-EK SST39VF800Q-70-4I-BK SST39VF800Q-90-4I-BK SST39VF800 Valid combinations SST39VF800-70-4C-EK SST39VF800-70-4C-BK SST39VF800-90-4C-EK SST39VF800-90-4C-BK SST39VF800-70-4I-EK SST39VF800-90-4I-EK SST39VF800Q-90-4C-U1 SST39VF800-90-4C-U1 SST39VF800-70-4I-BK SST39VF800-90-4I-BK Example : Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. © 1999 Silicon Storage Technology, Inc. 22 343-04 2/99 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information PACKAGING DIAGRAMS 1.10 0.90 1.05 0.95 PIN # 1 IDENT. DIA. 1.00 1 .50 BSC 2 .270 .170 3 12.20 11.80 4 5 0.15 0.05 18.50 18.30 6 0.70 0.50 Note: 20.20 19.80 7 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 48.TSOP-EK-ILL.0 8 48-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) SST PACKAGE CODE: EK 9 BOTTOM VIEW TOP VIEW PIN 1 CORNER 10 PIN 1 CORNER 0.30 ± 0.05 (48X) 1 2 3 4 5 6 6 5 4 3 2 1 B B C C D E F 5.60 0.80 A 10.00 ± 0.20 A 11 12 D E F G G H H 13 0.80 4.00 SIDE VIEW 14 0.15 8.00 ± 0.20 15 1.10 ± 0.10 0.21 ± 0.05 SEATING PLANE 48pn TFBGA.8x10-ILL.2 16 48-BALL THIN FINE-PITCH BALL GRID ARRAY (TFBGA) SST PACKAGE CODE: BK © 1999 Silicon Storage Technology, Inc. 23 343-04 2/99