Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. Amplifier Configuration 1 8 2 7 3 6 4 5 G OIP2 OIP3 P 1dB Product Features • Excellent CSO/CTB/XMOD Performance at • • +34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout 5 to 900 MHz operation Applications • CATV Head End Driver and Predriver Amplifier • FCATV req.(MLine H z ) Driver Min.Amplifier Typ. Max. U nits ELECTRICAL SPECIFICATIONS Symbol Dual CATV Broadband High Linearity SiGe HBT Amplifier Parameter *5 50 500 870 Small Si gnal Gai n *See 5-100 MHz Appli cati on C i rcui t, pg. 7. dB 10.0 13.2 12.5 12.5 12.0 dB m 67.0 69.0 71.5 69.0 dB m 36.0 36.5 38.0 38.0 20.0 21.0 20.6 dB m Output Second Order Intercept Poi nt Tone Spaci ng = 1 MHz, Pout per tone = +6 dBm 50 250 500 Output Thi rd Order Intercept Poi nt Tone Spaci ng = 1 MHz, Pout per tone = +6 dBm 50 500 870 Output Power at 1dB Gai n C ompressi on 50 500 870 18.6 IRL Input Return Loss 500 50-870 10 ORL Output Return Loss 500 50-870 10 NF 17.0 12.0 50 500 870 Noi se Fi gure Balun Inserti on Loss Included dB 4.2 4.3 5.0 dB dB 6.0 C SO Worst C ase Over Band, 79 C h., Flat, +34dBmV 70 dB c C TB Worst C ase Over Band, 79 C h., Flat, +34dBmV 68 dB c XMOD Worst C ase Over Band, 79 C h., Flat, +34dBmV 63 dB c VD D evi ce Operati ng Voltage 3.9 4.1 4.3 V ID D evi ce Operati ng C urrent 135 150 165 mA RTH(J-L) Thermal Resi stance (Juncti on to Lead) Test Conditions: VS = 8 V RBIAS = 51 Ohms 50 ID = 150 mA Typ. @ TL = 25ºC ZS = ZL = 75 Ohms °C /W Push Pull Application Circuit The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier Absolute Maximum Ratings Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Absolute Limit Max. Device Current (ID) 225 mA Max. Device Voltage (VD) 7V Max. RF Input Power +18 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l Parameter Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Config. G a in v s . F re q u e n c y 16 |S 21 | (dB) 14 12 10 -4 0 °C 8 + 25 °C + 85 °C 6 0 100 2 00 30 0 4 00 50 0 600 7 00 80 0 9 00 1 0 00 F r e qu e nc y (M H z) Input Return L oss vs . F requency 0 -5 -2 -40°C -4 + 25°C + 85°C -6 |S 22 | (dB) -10 |S 11 | (dB) O u tp u t R e tu rn L o s s v s . F re q u e n c y 0 -15 -20 -8 -10 -12 -14 -40°C -16 + 25°C -25 -18 + 85°C -20 -30 0 100 200 300 400 500 600 F req u en cy (MH z ) 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 Freque ncy (M Hz) 75 Ohm Push Pull S-parameters are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Config. IP3 vs. Temperature 45 75 40 70 35 -4 0 C 30 25C 85C 25 65 60 -4 0 °C + 2 5°C + 8 5°C 55 20 50 0 0 .2 0 .4 0 .6 0 .8 1 0 Frequency (GHz) 80 70 70 IM3 (dBc) 90 80 60 66M H z 40 100M H z 500M H z 20 0 .8 1 50 66M H z 40 100M H z 250M H z 30 500M H z 20 0 3 6 9 12 15 0 3 6 Pout (dBm) 9 12 15 Pout (dBm) Push-Pull CGA-3318 Noise Figure 50MHz-900MHz, Typical 6 Push-Pull CGA-3318 CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch.,Flat 11 0 10 0 5 CTB CSO- CSO+ Xmod 90 4 80 dBc NF (dB) 0 .6 60 250M H z 30 0 .4 Third Harmonic vs. Pout and Freq. Data shown is typical at 25C 100 90 50 0 .2 Frequency (GHz) Second Harmonic vs. Pout and Freq. Data shown is typical at 25C 100 IM2 (dBc) IP2 vs. Temperature 80 IP2 (dBm) IP3 (dBm) 50 3 2 70 60 1 50 0 40 0 200 400 600 800 1000 0 1 00 Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 20 0 300 4 00 500 6 00 Frequency (MHz) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier CSO/CTB/XMOD Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. Push-Pull CGA-3318 CTB vs. Pout and Freq. Push-Pull CGA-3318 XMOD vs. Pout and Freq. 100 100 90 32dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 90 dBc dBc 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 80 80 70 70 60 60 50 50 40 40 0 100 200 300 Frequency (MHz) 400 500 0 600 Push-Pull CGA-3318 CSO- vs. Pout and Freq. 100 100 90 90 80 80 dBc dBc 32dBmV 70 100 200 300 Frequency (MHz) 400 500 600 Push-Pull CGA-3318 CSO+ vs. Pout and Freq. 70 60 60 50 32dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 50 32dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 40 40 0 100 200 300 Frequency (MHz) 400 500 600 0 100 200 300 Frequency (MHz) 400 500 600 Note: CSO measurements > 85 dBc can be limited by system noise. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance - Single Ended - 50 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 0 14 -4 -5 12 -8 -10 10 -12 8 -16 6 -20 |S11| & |S22| vs. Frequency -15 dB Gain (dB) 4 Isolation (dB) 0 16 -20 -25 -24 -30 -28 -35 -32 -40 |S11| Gain (dB) 2 Isolation (dB) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S22| 0.0 0.5 1.0 Frequency (GHz) 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Typical RF Performance - Single Ended - 37.5 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 0 0 14 -4 -5 12 -8 -10 10 -12 8 -16 6 -20 4 |S11| & |S22| vs. Frequency -15 dB Isolation (dB) Gain (dB) 16 -20 -25 -24 -30 -28 -35 -32 -40 |S11| Gain (dB) 2 |S22| Isolation (dB) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Frequency (GHz) 50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier Pin # Function 1 RF IN Device 1 RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. Description Device Pin Out 2,3 Ground Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 RF IN Device 2 Same as pin 1 RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor Device 2 should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. 5 6,7 Ground EPAD 8 2 7 3 6 4 5 Same as pins 2 and 3 RF OUT / Vcc Same as pin 5 Device 1 8 1 Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5. Ground Basic Application Schematic 50-870 MHz Vs Evaluation Board Layout 50-870 MHz RBIAS 1µF Tant. 0.01µF 1000pF Rbias 68pF 1uF Tant. RF INPUT RF OUTPUT 220 nH 1 Macom ETC1-1-13 8 Amp 1 1000 pF 2,3 1000 pF 4 5 Amp 2 CGA-3318 SOIC-08 0.01µF 220nH 1000pF Balun ETC1-1-13 1000pF 6,7 1000 pF 1µF Tant. Balun ETC1-1-13 1000 pF .01uF 1000pF 68pF 1000pF 1000pF Macom ETC1-1-13 220nH 220 nH 1uF Tant. 68pF 1000pF 68pF 1000pF .01uF ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias RBIAS Vs Part Number Ordering Information Recommended Bias Resistor Values for ID=150mA Supply Voltage(VS) RBIAS RBIAS Power Rating 8V 9V 51 62 1/2W 1/2W 12V 100 1W 2(VS-VD) RBIAS= ID 303 S. Technology Ct. Broomfield, CO 80021 15V Part Number Devices Per Reel Reel Size CGA-3318 500 7" 150 1W Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier 5 - 100 MHz Application Circuit: VS=8V, ID=150mA @ TL=+25°C, Push-Pull Config. G a in v s . F re q u e n c y 16 -5 |S 11 | and |S 22 | (dB) 14 |S 21 | (dB) R eturn Lo ss vs. Frequ ency 0 12 10 8 -10 |S 22 | -15 -20 |S 11 | -25 -30 6 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 F re que nc y (M Hz ) P 1 d B a n d IP 3 v s . F r e q u e n c y 22 40 50 60 70 80 90 100 100 110 F requency (M Hz) 21 39 20 38 19 37 18 36 N o is e F ig ure v s. F re q uency 8 40 7 35 IP3 16 34 0 10 20 30 40 50 60 70 80 90 NF (dB) 5 4 3 2 P1dB 17 IP3 (dBm) P1dB (dBm) 6 100 110 1 0 0 10 20 30 F re qu e nc y (M H z ) 40 50 60 70 80 90 F r e q u e n c y (M H z ) 5-100 MHz Application Schematic 5-100 MHz Evaluation Board Layout Vs RBIAS 1µF Tant. 0.01µF 1000pF Rbias 68pF 1uF Tant. 10 µΗ 1 Macom ETC1-1T 0.01 µF 2,3 0.01 µF 5 Amp 2 CGA-3318 SOIC-08 0.01µF 1000pF 10uH Balun ETC1-1T 0.01uF 6,7 0.01 µF 4 RF OUTPUT 8 Amp 1 0.01 µF 1µF Tant. RF INPUT Macom ETC1-1T 0.01uF 10uH 10 µΗ 1uF Tant. 68pF .01uF 1000pF 68pF 0.01uF Balun ETC1-1T 0.01uF 68pF 1000pF .01uF ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias RBIAS Vs 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-101993 Rev G CGA-3318 Dual SiGe HBT Amplifier PCB Pad Layout Dimensions in inches [millimeters] Sized for 31 mil thick FR-4 Nominal Package Dimensions & Package Marking Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. TOP VIEW 8 7 BOTTOM VIEW 6 5 Lot Code CGA3318 .155 [3.937] .112 [2.85] .236 [5.994] .088 [2.25] EXPOSED PAD 1 2 3 4 .061 [1.549] .194 [4.93] .050 [1.27] .016 [.406] .061 [1.549] .058 [1.473] .008 .008 [.203] .194 [4.928] .003 [.076] 303 S. Technology Ct. Broomfield, CO 80021 PARTING LINE .155 [3.937] SEATING PLANE SIDE VIEW DETAIL A .013 [.33] x 45° SEE DETAIL A END VIEW Phone: (800) SMI-MMIC 8 .025 5° http://www.sirenza.com EDS-101993 Rev G