Preliminary Preliminary Product Description Stanford Microdevices CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The amplifier contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. Amplifier Configuration 1 8 2 7 3 6 4 5 CGA-6618 Dual CATV Broadband High Linearity GaAs HBT Amplifier Product Features Excellent CSO/CTB/XMOD Performance at +34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout Operates from a single supply Dropping Resistor provides Temperature Compensation Applications CATV Head End Driver and Predriver Amplifier CATV Line Driver Amplifier Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data Test C onditions: V S = 8.0 V lD= 160mA R BIAS=39 Ohms TL = 2 5 º C ZS = ZL = 75 Ohms Gai n Freq. U nits Min. Ty p. 50 MHz 500 MHz 860 MHz dB 14.0 14.1 14.0 Output IP 2 Tone spaci ng = 1 MHz P out/Tone = +6 dB m 50 MHz 500 MHz 860 MHz dB m 72 82 74 Output IP 3 Tone spaci ng = 1 MHz P out/Tone = +6 dB m 50 MHz 500 MHz 860 MHz dB m 38 40 40 Output P 1dB 50 MHz 500 MHz 860 MHz dB m 21.5 21.5 21.0 Input Return Loss 50 MHz 500 MHz 860 MHz dB 12.5 17.0 13.5 Output Return Loss 50 MHz 500 MHz 860 MHz dB 10.0 19.0 13.5 50 MHz 500 MHz 860 MHz dB 3.9 4.1 4.4 Noi se Fi gure A verage of 3 devi ces B alun Inserti on Loss Included C SO Worst C ase Over B and 79 C h., Flat, +34dB mV dB c 81 C TB Worst C ase Over B and 79 C h., Flat, +34dB mV dB c 70 X MOD Worst C ase Over B and 79 C h., Flat, +34dB mV dB c 65 V 4.7 Vd Max. Note: Measured in Push-Pull Application test board The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101994 Rev B Preliminary CGA-6618 Dual GaAs HBT Amplifier Typical S-Parameters @ VS=8V, ID=160mA, RBIAS=39 Ohms, TL=+25°C Gain vs. Frequency 15 13 S21 (dB) 11 9 -40C 25C 85C 7 5 0 200 400 600 800 1000 Frequency (MHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency -5 -5 -40C 25C 85C -10 S11 (dB) S22 (dB) -10 -15 -20 -15 -40C 25C 85C -20 -25 -25 0 200 400 600 800 1000 0 200 Frequency (MHz) 400 600 Frequency (MHz) 800 1000 Absolute Maximum Ratings Parameter Absolute Limit Max. D evi ce C urrent (ID) 240 mA Max. RF Input Power +16 dBm Max. Juncti on Temp. (TJ) +150ºC Operati ng Temp. Range (TL) -40ºC to +85ºC Max. Storage Temp. +150ºC Operati on of thi s devi ce beyond any of these li mi ts may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101994 Rev B Preliminary CGA-6618 Dual GaAs HBT Amplifier Typical RF Performance @ VS=8V, ID=160mA, RBIAS=39 Ohms, TL=+25°C IP2 vs. Temperature 90 45 85 40 80 IP2 (dBm) IP3 (dBm) IP3 vs. Temperature 50 35 30 -40C 25C 85C 25 75 70 20 0 .2 0 .4 0 .6 0 .8 1 0 0 .4 0 .6 0 .8 Frequency (MHz) Second Harmonic vs. Pout and Freq. Data shown is typical at 25C Third Harmonic vs. Pout and Freq. Data shown is typical at 25C 90 80 80 70 70 IM3 (dBc) 100 90 60 50 6 6 M Hz 40 100MHz 250MHz 30 0 .2 Frequency (MHz) 100 IM2 (dBc) 2 5C 8 5C 60 0 1 60 66M Hz 100M Hz 50 40 250M Hz 500M Hz 30 500MHz 20 20 0 6 3 6 9 12 15 0 3 6 9 12 Pout (dBm) Pout (dBm) Push-Pull CGA-6618 Noise Figure 50MHz-900MHz, Typical Push-Pull CGA-6618 CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch.,Flat 110 15 100 5 90 4 80 3 dBc NF (dB) -4 0C 65 2 70 60 1 50 0 C TB C SO- C SO+ X m od 40 0 200 400 600 800 1000 0 Frequency (MHz) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 100 200 300 400 Frequency (MHz) 500 600 http://www.stanfordmicro.com EDS-101994 Rev B Preliminary CGA-6618 Dual GaAs HBT Amplifier Pin # Function 1 RF IN Device 1 RF input pin. This pin requires the use of an external DC blocking capacitor as show n in the schematic. Description Device Pin Out 2,3 Ground Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 RF IN Device 2 Same as pin 1 RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias Device 2 netw ork should be w ell bypassed. 5 6,7 Ground EPAD 8 2 7 3 6 4 5 Same as pins 2 and 3 RF OUT / Vcc Same as pin 5 Device 1 8 1 Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as show n in the recommended land pattern below. Ground Basic Application Schematic 50-860 MHz Evalution Board Layout 50-860 MHz Vs RBIAS 1µF Tant. 0.01µF 1000pF 68pF Rbias 1uF Tant. RF INPUT 220 nH 1 Macom ETC1-1-13 RF OUTPUT .01uF 1000pF 68pF 8 Amp 1 1000 pF 1000 pF 2,3 Balun ETC1-1-13 220nH 1000 pF 1000 pF 4 Macom ETC1-1-13 1000pF 220nH 5 CGA-6618 SOIC-08 ECB-101611 Rev A ESOP-8 Push-Pull Eval Board 220 nH 1uF Tant. 0.01µF 1000pF 1000pF 68pF 1000pF .01uF Amp 2 1µF Tant. Balun ETC1-1-13 1000pF 1000pF 6,7 68pF Rbias RBIAS Vs Recommended Land Pattern .15 [3.81] Recommended Bias Resistor Values for ID=160mA Supply Voltage(VS) RBIAS RBIAS Pow er Rating 8V 9V 12V 39 56 91 1/2W 1/2W 1W 15V .24 [6.22] 130 .16 [4.02] .33 [8.42] 1W .11 [2.71] 2(VS-VD) RBIAS= ID 726 Palomar Ave., Sunnyvale, CA 94085 .05 [1.27] Phone: (800) SMI-MMIC 4 .02 [.60] http://www.stanfordmicro.com EDS-101994 Rev B Preliminary CGA-6618 Dual GaAs HBT Amplifier Package Outline Drawing TOP VIEW 8 7 BOTTOM VIEW 6 5 Date Code CGA 6618 1 2 .078 [1.969] .155 [3.937] EXPOSED PAD .061 [1.549] 4 3 .236 [5.994] .035 [.889] .045 [1.143] .050 [1.27] .194 [4.93] .016 [.406] .061 [1.549] .058 [1.473] .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW PARTING LINE END VIEW DETAIL A .025 5° Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Devices Per Reel Reel Size CGA-6618 500 7" Note: Parts need to be baked prior to use as discussed in application note EAN-101472 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101994 Rev B