Preliminary Preliminary Preliminary Product Description Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package. SSW-408 DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw reflective switch consumes less than 50uA and can operate with positive or negative 3V to 8V supply voltages, making it suitable for use in both infrastructure and subscriber equipment. This switch can be used in all analog and digital wireless communication systems including (but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. At +5V or –5V bias, typical output power at 1dB compression is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm may be achieved with higher control voltages. Isolation vs. Frequency VControl = -5 V -10 Product Features • High Compression Point : up to 4 Watts • HIgh Linearity : TOIP +55dBm @2GHz • Low DC Power Consumption • Low Insertion Loss : 1.2dB at 2GHz • Operates from Positive or Negative 3V to 8V Supplies • Low Cost Small Outline Plastic Package -20 dB -30 -40 DC 1 2 3 4 GHz Applications • Analog/Digital Wireless Communications • Spread Spectrum • AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. Electrical Specifications at Ta = 25C Symbol Parameters & Test C onditions: Zo = 50 ohms v = +5 or -5V U nits Min. Typ. Max. 0.9 1.2 1.5 1.3 1.5 Inserti on Loss f = 0.05 - 1.0 GHz f = 1.00 - 2.0 GHz f = 2.00 - 4.00 GHz dB dB dB Isolati on f = 0.05 - 1.0 GHz f = 1.00 - 2.0 GHz f = 2.00 - 4.00 GHz dB dB dB VSWR on Input & Output VSWR (on port) f = 0.05 - 2.0 GHz f = 2.00 - 4.0 GHz 1.2 1.5 VSWR off Input & Output VSWR (off port) f = 0.05 - 2.0 GHz f = 2.00 - 4.0 GHz 1.2 1.5 Output Power @ 2.0 GHz at 1 dB C ompressi on V = +8V or -8V V = +5V or -5V V = +3V or -3V dB dB dB +36 +34 +31 Thi rd Order Intercept V = +8V or -8V V = +5V or -5V V = +3V or -3V dB dB dB +55 +53 +50 uA 40 nsec 10 Ins Isol P 1dB TO IP Id Isw D evi ce C urrent Swi tchi ng Speed 10% to 90% or 90% to 10% 24 18 28 22 18 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101099 Rev -A Preliminary Preliminary Preliminary SSW-408 DC-4.0GHz GaAs MMIC Switches Truth Table V d d (note 1) V 1 (note V 2 (note 2) J1-J2 2) Absolute Maximum Ratings J1-J3 R F I np ut P o w e r 6 W M a x> 5 0 0 M Hz D e vi c e / C o nt r o l Vo l t a g e -8V or +8V 0 0 -V Low Loss I solat ion ( Hi - Z ) 0 -V 0 I solat ion ( Hi - Z ) Low Loss O p e r a t i ng Te m p e r a t u r e -45C to +85C St o r a g e Te m p e r a t u r e -65C to +150C T he r ma l R e s i s t a nc e 20 deg C/ W +V (note 3) 0 +V I solat ion ( Hi - Z ) Low Loss +V (note 3) +V 0 Low Loss I solat ion ( Hi - Z ) Note 1: The “Vdd” pin should be permanently connected to the most positive control voltage. If using positive (0V / 5V) control signals, Vdd = 5V. If using negative (-5V / 0V) control voltages, Vdd = 0V. Note 2: The differential control voltage (v = |V1 - V2|) may be from 3V to 8V in magnitude. Note 3: Decouple “Vdd” to a good RF ground, and use DC blocking capacitors on all RF pins (J1, J2, & J3). Caution: Appropriate precautions in handling, packaging and testing devices must be observed. Switch Schematic Note 1: The switch state shown is when V1 is 3v to 8v greater than V2. Pin Out Pin Funct ion 1 G ND Descr ipt ion G r o und 2 V1 D i f f e r e nt i a l C o nt r o l 1 3 J1 RFin 4 V2 D i f f e r e nt i a l C o nt r o l 2 5 J3 R F o ut 2 6 Vdd B i a s C o nt r o l 7 G ND G r o und 8 J2 R F o ut 1 Insertion Loss vs. Frequency VControl = -5 V 0.0 On Port Input/Output VSWR vs. Frequency VControl = -5 V 2.0 1.8 -0.5 1.6 dB dB -1.0 1.4 -1.5 1.2 1.0 -2.0 DC 1 2 3 DC 4 GHz 1 2 3 4 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101099 Rev -A