Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. Typical Gain Performance (8V,100mA) 40 Gain, Gmax (dB) 30 Gmax 20 SHF-0186K 0.05-6 GHz, 0.5 Watt GaAs HFET Pending Obsolescence Last Time Buy Date: March 15, 2004 Product Features • +28 dBm Output Power at 1dB Compression • +40 dBm OIP3 • High Drain Efficiency • 18 dB Gain at 900 MHz (Application Circuit) • 15 dB Gain at 1960 MHz (Application Circuit) • See App Note AN-020 for circuit details 10 Gain Applications • Analog and Digital Wireless Systems • 3G, Cellular, PCS • Fixed Wireless, Pager Systems 0 -10 0 2 4 6 8 Frequency (GHz) 10 12 D evice C haracteristics, T = 25°C VDS=8V, IDQ=100mA (unless otherw ise noted) Test Frequency [1] = 100% Tested U nits Min. Typ. Max. Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* f = 900 MHz f = 1960 MHz dB dB - 23.4 20.1 - Inserti on Gai n ZS=ZL= 50 Ohms f = 900 MHz f = 1900 MHz [1] dB dB 14.0 18.0 15.0 16.0 Power Gai n ZS=ZSOPT , ZL=ZLOPT f = 900 MHz f = 1960 MHz dB m dB m - 17.9 14.5 - OIP3 Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT , POUT= +15 dBm per tone f = 900 MHz f = 1960 MHz dB m dB m - 41 40 - P 1dB Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT f = 900 MHz f = 1960 MHz dB m dB m - 28 28 - Symbol Gmax S 21 G IDSS Saturated D rai n C urrent VDS= VDSP, VGS= 0V mA 204 294 384 gm Tranconductance VDS= VDSP, VGS= -0.25V mS 144 198 252 VP Pi nch-Off Voltage VDS= 2V, IDS= 0.6mA [1] V -3.0 -1.9 -1.0 BVGS Gate-to-Source Breakdown Voltage IGS= 1.2mA, drai n open [1] V - -17 -15 BVGD Gate-to-D rai n Breakdown Voltage IGD= 1.2mA, VGS= -5V [1] -17 Rth Thermal Resi stance, juncti on-to-lead V DS Operati ng Voltage (drai n-to-source) o IDS Operati ng C urrent (drai n-to-source, qui escent) TJ Recommended Operati ng Juncti on Temperature V - -22 C /W - 66 - V - - 9.0 mA - - 200 C - - 150 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101577 Rev D Preliminary Pending Obsolescence SHF-0186K 0.5 Watt HFET Absolute Maximum Ratings Operation of this device beyond any one of these parameters may cause permanent damage. Parameter MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the device operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (°C) TL = Lead Temperature (pin 2,4) (°C) RTH = Thermal Resistance (°C/W) Symbol Value Unit Drain Current IDS IDSS mA Forward Gate Current IGSF 1.2 mA Reverse Gate Current IGSR 1.2 mA Drain-to-Source Voltage V DS +12 V Gate-to-Source Voltage VGS <-5 or >0 V RF Input Power PIN 200 mW Operating Temperature TOP -40 to +85 °C Storage Temperature Range Tstor -40 to +175 °C Power Dissipation PDISS 3.5 W TJ +175 °C Channel Temperature Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1. Typical Performance - Engineering Application Circuits (See App Note AN-020) Freq (MH z ) VDS (V) IDQ (mA) P1dB OIP3* (dB m) (dB m) Gain (dB ) S11 (dB ) S 22 (dB ) NF (dB ) ZSOPT (Ω Ω) ZLOPT (Ω Ω) 50.3 + j2.6 900 8 100 28.1 40.5 18.4 -16 -9 3.1 73 + j51.5 1960 8 100 28.8 40 14.7 -16 -5 2.5 24.9 + j32.0 36.4 - j2.5 2140 8 100 28.7 38.5 14.4 -12 -7 3.0 21.4 + j24.7 34.9 + j2.3 2450 8 100 28.6 39.5 13.9 -15 -5 2.9 15.0 + j21.6 44.8 - j5.5 * POUT= +15dBm per tone, 1MHz tone spacing [4] IS-95 CDMA Channel Power (9 Fwd Channels, 885kHz offset, 30kHz Adj Chan BW) [5] W-CDMA Channel Power (64 DPCH, 5MHz offset, 3.84MHz Adj Chan BW) [6] POUT= +13dBm per tone, 1MHz tone spacing Data above represents typical performance of the application circuits noted in Application Note AN-020. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. D G Z ZSOPT 303 Technology Court, Broomfield, CO 80021 LOPT S Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101577 Rev D Preliminary Pending Obsolescence SHF-0186K 0.5 Watt HFET De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDS=100mA, 25° C) Gain & Isolation -10 Isolation -20 20 Gmax 10 -30 Gain 0 -40 20 0 2 4 6 8 Frequency (GHz) S11 vs Frequency 10 15 T = -40, 25, 85°C 10 5 0 -5 -10 -50 -10 Gain vs Temperature 25 Gain (dB) 30 0 Isolation (dB) Gain, Gmax (dB) 40 0 12 2 4 1.0 0.5 6 Frequency (GHz) S22 vs Frequency 8 10 1.0 2.0 6 GHz 2.0 0.5 10 GHz 10 GHz 13 GHz 0.2 0.2 5.0 5.0 13 GHz 6 GHz 3 GHz 0.0 0.2 0.5 1.0 2.0 5.0 0.0 inf 0.2 0.5 1.0 2.0 5.0 inf 3 GHz 2 GHz 0.2 2 GHz 1 GHz 0.5 1 GHz 0.2 5.0 5.0 2.0 0.5 2.0 1.0 1.0 Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com). DC-IV Curves 0.35 0.3 IDS (A) 0.25 0.2 VGS = -2.0 to 0V, 0.2V steps T=25° C 0.15 0.1 0.05 0 0 303 Technology Court, Broomfield, CO 80021 1 2 3 4 VDS (V) 5 Phone: (800) SMI-MMIC 3 6 7 8 http://www.sirenza.com EDS-101577 Rev D Preliminary Pending Obsolescence SHF-0186K 0.5 Watt HFET Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Pin # Function 1 Gate 2 Source 3 Drain 4 Source Part Number Reel Siz e Devices/Reel SHF-0186K 7" 1000 Description Part Symbolization The part will be symbolized with the “H1” designator and a dot signifying pin 1 on the top surface of the package. RF Input Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2 Package Dimensions H1 PCB Pad Layout H1 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101577 Rev D