STANFORD SGA-3463

Product Description
Stanford Microdevices’ SGA-3463 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 35mA , the SGA-3463 typically provides +24 dBm output
IP3, 22 dB of gain, and +11.3 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
VD= 2.9 V, ID= 35 mA (Typ.)
• Cascadable 50 Ohm
• Patented SiGe Technology
-10
• Operates From Single Supply
• Low Thermal Resistance Package
-20
6
-30
Return Loss (dB)
Gain (dB)
IRL
12
ORL
0
-40
1
2
3
4
Frequency (GHz)
Sy mbol
5
Product Features
0
GAIN
18
0
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
• High Gain : 19.5 dB at 1950 MHz
Gain & Return Loss vs. Frequency
24
SGA-3463
6
• Cellular, PCS, CDPD
• Wireless Data, SONET
• Satellite
Units
Frequency
Min.
Ty p.
Max.
dB
dB
dB
850 M Hz
1950 M Hz
2400 M Hz
20.0
22.0
19.5
18.5
24.0
Output Pow er at 1dB Compression
dBm
dBm
850 M Hz
1950 M Hz
11.3
11.0
Output Third Order Intercept Point
(Pow er out per tone = -5dBm)
dBm
dBm
850 M Hz
1950 M Hz
24.0
24.6
Bandw idth Determined by Return Loss (<-10dB)
M Hz
G
P1dB
OIP3
IRL
Parameter
Applications
Small Signal Gain
5000
Input Return Loss
dB
1950 M Hz
18.7
Output Return Loss
dB
1950 M Hz
22.4
NF
Noise Figure
dB
1950 M Hz
3.2
VD
Device Voltage
V
RTh
Thermal Resistance
ORL
Test Conditions:
VS = 5 V
RBIAS = 62 Ohms
°C/W
ID = 35 mA Typ.
TL = 25ºC
2.6
2.9
3.2
255
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100636 Rev. B
Preliminary
SGA-3463 DC-5000 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
G
Parameter
Unit
100
500
dB
23.0
Small Signal Gain
Frequency
(MHz)
Frequency
Frequency
(MHz)(MHz)
850
1950
2400
3500
22.6
22.0
19.5
18.5
16.3
24.6
24.0
24.6
OIP3
Output Third Order Intercept Point
dBm
P1dB
Output Pow er at 1dB Compression
dBm
10.9
11.3
11.0
IRL
Input Return Loss
dB
24.1
21.0
18.3
18.7
18.5
15.7
ORL
Output Return Loss
dB
27.4
26.1
31.9
22.4
20.3
20.8
S12
Reverse Isolation
dB
24.5
24.8
25.0
24.0
23.3
21.2
NF
Noise Figure
dB
2.8
2.5
3.2
Test Conditions:
VSS== 85 V
V
V
RBIAS
= 62 Ohms
R
BIAS= 39 Ohms
35 mA
mA Typ.
Typ.
IIDD == 80
25ºC
TTLL == 25ºC
OIP33 Tone
Tone Spacing
Spacing == 11 MHz,
MHz, Pout
Pout per
per tone
tone == 0-5dBm
dBm
OIP
50 Ohms
Ohms
ZZSS== ZZLL== 50
Absolute Maximum Ratings
Noise Figure vs. Frequency
VD= 2.9 V, ID= 35 mA (Typ.)
Noise Figure (dB)
5
4
3
2
1
TL=+25ºC
0.5
1
1.5
2
Frequency (GHz)
2.5
Absolute Limit
Max. Device Current (ID)
70 mA
Max. Device Voltage (VD)
4V
Max. RF Input Pow er
+5 dBm
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage.
0
0
Parameter
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/Rth
3
OIP3 vs. Frequency
P1dB vs. Frequency
VD= 2.9 V, ID= 35 mA (Typ.)
15
35
13
P1dB (dBm)
30
OIP3 (dBm)
VD= 2.9 V, ID= 35 mA (Typ.)
25
20
11
9
7
TL=+25ºC
TL=+25ºC
5
15
0
0.5
1
1.5
2
Frequency (GHz)
726 Palomar Ave., Sunnyvale, CA 94085
2.5
3
Phone: (800) SMI-MMIC
2
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
http://www.stanfordmicro.com
EDS-100636 Rev. B
Preliminary
SGA-3463 DC-5000 MHz Cascadable MMIC Amplifier
|S | vs. Frequency
|S | vs. Frequency
VD= 2.9 V, ID= 35 mA (Typ.)
VD= 2.9 V, ID= 35 mA (Typ.)
21
24
11
0
-10
S11(dB)
S21(dB)
18
12
-20
-30
6
+25°C
-40°C
+85°C
TL
0
0
1
2
3
4
Frequency (GHz)
5
-40
6
0
1
5
|S | vs. Frequency
|S | vs. Frequency
VD= 2.9 V, ID= 35 mA (Typ.)
6
22
0
-10
S22(dB)
-15
S12(dB)
2
3
4
Frequency (GHz)
VD= 2.9 V, ID= 35 mA (Typ.)
12
-10
+25°C
-40°C
+85°C
TL
-20
-25
-20
-30
+25°C
-40°C
+85°C
TL
-30
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
TL
-40
6
0
1
2
3
4
Frequency (GHz)
5
6
NOTE: Full S-parameter data available at www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100636 Rev. B
Preliminary
SGA-3463 DC-5000 MHz Cascadable MMIC Amplifier
Basic Application Circuit
Application Circuit Element Values
R BIAS
VS
1 uF
1000
pF
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
LC
1,2
3 SGA-3463 6
RF in
CB
RF out
CB
4,5
Frequency (Mhz)
Reference
Designator
Recommended Bias Resistor Values for ID=35mA
Supply Voltage(VS)
RBIAS
5V
62
8V
150
10 V
200
12 V
270
Note: RBIAS provides DC bias stability over temperature.
VS
RBIAS
LC
A34
CB
1 uF
1000 pF
CD
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
CB
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Pin #
Function
3
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
6 5 4
1
GND
A34
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
6
Part Identification Marking
The part will be marked with an “A34” designator on
the top surface of the package.
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
1 2 3
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
2,4,5
GND
Sames as Pin 2
Part Number Ordering Information
Appropriate precautions in handling, packaging
and testing devices must be observed.
726 Palomar Ave., Sunnyvale, CA 94085
Description
Part Number
Reel Size
Devices/Reel
SGA-3463
7"
3000
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-100636 Rev. B