VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications Package Option ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Telecom Switching ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN3515L/VN4012L Thermal Characteristics Package * ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W IDR* IDRM VN3515L (TO-92) 150mA 600mA 1W 125 170 150mA 600mA VN4012L (TO-92) 160mA 650mA 1W 125 170 160mA 650mA ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage VN3515 350 VN4012 400 VGS(th) Gate Threshold Voltage IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max V 0.6 0.15 V VGS = VDS, ID = 1mA nA VGS = ± 20V, VDS = 0V Static Drain-to-Source ON-State Resistance RDS(ON) VN4012 125 VGS = 0V, VDS = 0.8 Max Rating µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C A VDS = 10V, VGS = 4.5V 0.3 VN3515 VGS = 0V, ID = 100µA 10 1 ON-State Drain Current Conditions 1.8 100 ID(ON) Unit 9.5 15 17 35 9.5 12 17 30 GFS Forward Transconductance 350 CISS Input Capacitance COSS Common Source Output Capacitance 30 CRSS Reverse Transfer Capacitance 10 td(ON) Turn-ON Delay Time 20 tr Rise Time 20 td(OFF) Turn-OFF Delay Time 65 tf Fall Time 65 VSD Diode Forward Voltage Drop 1.2 VGS = 4.5V, ID = 100mA Ω VGS = 4.5V, ID = 100mA, TA = 125°C VGS = 4.5V, ID = 100mA VGS = 4.5V, ID = 100mA, TA = 125°C m Ω Symbol VDS =15V, ID = 100mA 110 pF VDS = 25V, VGS = 0V f = 1MHz ns VDD = 25V ID = 100mA RGEN = 25Ω V VGS = 0V, ISD = 160mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. 3. See TN2540 data sheet for characteristic curves. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD INPUT 10% 10% OUTPUT 0V 90% 90% 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com