TRIQUINT TGA8320

Product Data Sheet
Gain Block Amplifier
TGA8320-SCC
Key Features and Performance
•
•
•
•
•
•
DC to 8 GHz Frequency Range (L, S,
and C-band)
9.5 dB Gain
1.3:1 Input/Output SWR
17 dBm Output Power at 1 dB Gain
Compression
Typical Noise Figure is 5 dB
1.066 x 1.219 x 0.152 mm (0.042 x 0.048
x 0.006 in.)
Description
The TriQuint TGA8320-SCC is a general purpose gain block amplifier, which operates
from DC to 8 GHz. Four 200 um FETs produce 9.5 dB nominal gain and a noise figure
that is 5 dB across the band. Typical input and output return loss is 16 dB at midband.
Nominal power output is 17 dBm at 1 dB gain compression. Ground is provided to the
circuitry through vias to the backside metallization.
The TGA8320-SCC gain block amplifier is suitable for a variety of military and
commercial applications such as L, S, and C-band radar systems, ECM, and
communication systems.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy
attachment methods as well as the thermocompression and thermosonic wire-bonding
processes.
The TGA8320-SCC is supplied in chip form and is readily assembled using automated
equipment.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGS8320-SCC
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGS8320-SCC
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGS8320-SCC
TYPICAL S-PARAMETERS
S 21
S 11
Frequency
S 12
S 22
GAIN
(GHz)
MAG
ANG (°)
MAG
ANG (°)
MAG
ANG (°)
MAG
ANG (°)
(dB)
0 .5
0 .0 5
- 79
3 .1 8
166
0 .0 0 1
111
0 .0 4
52
1 0 .1
1 .0
0 .0 6
- 113
3 .1 1
155
0 .0 0 1
109
0 .0 7
59
9 .8
1 .5
0 .0 8
- 132
3 .0 7
144
0 .0 0 1
127
0 .0 9
59
9 .7
2 .0
0 .1 0
- 146
3 .0 3
133
0 .0 0 2
129
0 .1 1
55
9 .6
2 .5
0 .1 2
- 159
2 .9 9
122
0 .0 0 3
135
0 .1 3
50
9 .5
3 .0
0 .1 3
- 171
2 .9 6
112
0 .0 0 3
133
0 .1 4
43
9 .4
3 .5
0 .1 5
- 180
2 .9 3
101
0 .0 0 4
149
0 .1 5
37
9 .3
4 .0
0 .1 6
173
2 .9 1
90
0 .0 0 7
145
0 .1 6
26
9 .3
4 .5
0 .1 6
168
2 .9 1
79
0 .0 0 9
143
0 .1 5
12
9 .3
5 .0
0 .1 6
166
2 .8 9
68
0 .0 1 2
135
0 .1 5
-3
9 .2
5 .5
0 .1 8
166
2 .8 6
57
0 .0 1 9
131
0 .1 4
- 19
9 .1
6 .0
0 .1 8
149
2 .8 3
47
0 .0 1 8
107
0. 13
- 39
9 .0
6 .5
0 .1 2
148
2 .8 6
36
0 .0 1 7
105
0 .1 5
- 70
9 .1
7 .0
0 .0 9
164
2 .8 3
24
0 .0 1 8
104
0 .1 7
- 99
9 .0
7 .5
0 .0 9
- 164
2 .8 0
12
0 .0 2 0
101
0 .2 1
- 124
8 .9
8 .0
0 .1 3
- 150
2 .7 3
0
0 .0 2 2
95
0 .2 6
- 144
8 .7
TA = 25oC, V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA
Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.
RF CHARACTERISTICS
TYP
UNIT
GP
Sm all- s ig n al p o wer g ain
P ARAMETER
TES T CONDITIONS
f = DC t o 8 GHz
9 .5
dB
SWR(in )
In p u t s t an d in g wave rat io
f = DC t o 8 GHz
1 .3 :1
-
f = DC t o 8 GHz
f = DC t o 8 GHz
1 .3 :1
17
d Bm
SWR(o u t ) Ou t p u t s t an d in g wave rat io
P1 d B
Ou t p u t p o wer at 1 –d B g ain co m p res s io n
NF
IP 3
IP 2
No is e fig u re
f = DC t o 8 GHz
5
dB
Ou t p u t t h ird –o rd er in t ercep t p o in t
f = 2 GHz
f = 4 GHz
30
31
d Bm
Ou t p u t s eco n d –o rd er in t ercep t p o in t
f = 8 GHz
f = 2 GHz
28
33
d Bm
Ou t p u t t h ird h arm o n ic at 1 –d B g ain co m p res s io n
f = 4 GHz
f o = 2 GHz
39
- 2 3 .5
d Bc*
f o = 4 GHz
- 32
f o = 2 GHz
- 19
f o = 4 GHz
- 25
Ou t p u t s eco n d h arm o n ic at 1 –d B g a in co m p res s io n
d Bc*
V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA, TA = 25oC
*Unit dBc applies to decibels with respect to the carrier or fundamental frequency, fo.
THERMAL
INFORMATION
P ARAMETER
RΘ JC
Th erm al res is t an ce, ch an n el t o b ack s id e
TriQuint Semiconductor Texas : (972)994 8465
TES T CONDITION
NOM
UNIT
V = 1 2 V, V G2 = 1 .5 V, I = 7 0 m A
27
°C/ W
+
+
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGS8320-SCC
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
TGS8320-SCC
Refer to TriQuint Gallium Arsenide Products Designers’ Information on TriQuint’s web site.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
TGS8320-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7