Product Data Sheet 8 - 10.5 GHz Power Amplifier TGA8286-EPU Key Features and Performance • • • • • • 8 to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the upper or lower edges 5.384 x 2.997 x 0.1016 mm (0.212 x 0.118 x 0.004 in.) Description The TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain from 8 to 10.5 GHz with a typical 37% power-added efficiency at 2 to 3 dB gain compression. Ground is provided to the circuitry through vias to the backside metallization. The TGA8286-EPU effectively addresses applications such as an Xband radar transmitter or a microwave communication transmitter. The TGA8286-EPU is supplied in chip form and is engineered for high volume automated assembly. All metal surfaces are gold plated to be compatiable with thermocompression and thermosonic wire bonding processes. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA8286-EPU TYPICAL OUTPUT POWER P3dB TYPICAL SMALL-SIGNAL POWER GAIN TYPICAL RETURN LOSS TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGA8286-EPU ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V+…………………………………………………………………………………12 V Positive supply voltage range w ith respect to negative supply voltage, V+ - V-………………………0 V to 13 V Negative supply voltage range, V-…………………………………………………………………………-5 V to 0 V Drain supply voltage, V D…………………………………………………………………………………… 11 V Drain supply current, ID………………………………………………………………………………………3.6 mA Positive supply current, I+…..………………………………………………………………………………902 mA Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *……………………………………28.8 W Input continuous w ave pow er, PIN…………………………………………………………………………30 dBm Operating Channel temperature, TCH **…………………………………………………………………… 150oC Mounting temperature (30 sec.), TM…………………………………………………………………………320oC Storage temperature range, TSTG……………………………………………………………………………-65 to 150oC Ratings over operating channel temperature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 6.0 mW/oC. ** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. These ratings apply to each individual FET. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGA8286-EPU TYPICAL S-PARAMETERS S 11 F re que nc y S 21 S 12 S 22 GAIN (GHz) M AG ANG(°) M AG ANG(°) M AG ANG(°) M AG ANG(°) (dB ) 7.5 7.6 7.7 7.8 7.9 8.0 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 0.54 0.50 0.45 0.41 0.36 0.31 0.27 0.22 0.18 0.15 0.13 0.13 0.14 0.15 0.16 0.16 0.16 0.16 0.17 0.15 0.10 0.10 0.11 0.13 0.16 0.19 0.22 0.26 0.30 0.33 0.37 0.41 0.44 0.46 0.47 0.47 0.47 0.46 0.45 0.45 0.44 34 27 20 13 7 0 -6 -10 -10 -5 3 11 14 14 10 6 3 -1 -6 -22 -16 0 11 15 16 12 5 -3 -14 -24 -36 -49 -62 -78 -91 -104 -116 -127 -137 -146 -153 4.411 5.064 5.617 6.166 6.615 7.112 7.542 7.980 8.318 8.600 8.750 8.760 8.660 8.453 8.147 7.816 7.516 7.211 6.990 6.887 6.676 6.494 6.368 6.295 6.266 6.273 6.310 6.331 6.353 6.302 6.173 5.943 5.662 5.230 4.748 4.188 3.664 3.122 2.670 2.254 1.912 -170 167 144 122 101 80 59 39 18 -3 -24 -44 -64 -83 -102 -120 -137 -153 -168 176 160 145 130 115 99 84 68 51 33 15 -5 -24 -44 -65 -85 -105 -123 -141 -158 -174 172 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.008 0.008 0.007 0.008 0.008 0.009 0.009 0.009 0.008 0.008 0.007 0.006 0.005 0.005 0.004 88 74 54 36 16 0 -23 -46 -69 -89 -114 -135 -157 -177 165 148 132 116 103 89 74 60 47 33 19 2 -14 -28 -43 -59 -73 -90 -110 -132 -152 -169 175 160 150 142 135 0.38 0.33 0.31 0.30 0.31 0.33 0.36 0.37 0.39 0.39 0.39 0.38 0.36 0.35 0.33 0.32 0.31 0.31 0.31 0.29 0.27 0.27 0.28 0.29 0.30 0.32 0.34 0.36 0.39 0.40 0.40 0.40 0.38 0.35 0.31 0.27 0.25 0.26 0.30 0.35 0.41 -138 -149 -158 -166 -175 173 160 144 127 108 90 70 51 31 14 -4 -20 -34 -50 -63 -69 -73 -78 -82 -85 -89 -92 -97 -102 -108 -113 -119 -123 -127 -128 -124 -115 -103 -96 -91 -91 12.9 14.1 15.0 15.8 16.4 17.0 17.6 18.0 18.4 18.7 18.8 18.9 18.8 18.5 18.2 17.9 17.5 17.2 16.9 16.8 16.5 16.3 16.1 16.0 15.9 16.0 16.0 16.0 16.1 16.0 15.8 15.5 15.1 14.4 13.5 12.4 11.3 9.9 8.5 7.1 5.6 V D = 10 V, I D = 1.3 A, T A = 25oC, Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly Diagram.” The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGA8286-EPU RF CHARACTERISTICS P AR AM ETER TES T C ONDITIONS GP Small–s ignal pow e r ga in SWR(in) Input s tanding w a ve ratio SWR(out) Output s tanding w a ve ratio P 3dB Output pow er at 3–dB ga in c ompres s ion Output s e cond ha rmonic a t 3–dB gain compre s s ion IP 3 Output third–order inte rc ept point, 30MHz s ignal s pa cing P.A.E. Pow e r adde d effic iency f = 8 to 10.5 f = 8 to 10.5 f = 8 to 10.5 f = 8 to 10.5 f = 9 GHz f = 9 GHz f = 10 GHz f = 11 GHz f = 8 to 10.5 TYP UNIT GHz 16 dB GHz 1.4:1 GHz 1.9:1 GHz 36 dBm –59 dBc 46 45 dBm 44 GHz 35 % V D = 10 V, I D = 1.3 A, T A = 25oC (unless otherwise noted) THERMAL DATA P AR AM ETER R θjC The rma l re s is ta nc e , c ha nne l–to–ba c ks ide TES T C ONDITIONS V DS (FE T ) = 10 V, Ba s e = 25°C, Cha nne l = 76°C ID(FE T ) = 1.15 mA Ba s e = 100°C, Cha nne l = 161°C DGF ET M M IC 4.4 3.5 5.3 4.2 UNIT °C/W MMIC mounted with 38um AuSn solder to carrier. EQUIVALENT SCHEMATIC FET 1 = 2.4mm HFET, 2 x 1200um HFETs FET 2 = 9.6mm HFET, 8 x 1200um HFETs TaN resistors R 1 to R 24 values are in ohms and have a tolerance of +/- 16%, TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGA8286-EPU RECOMMENDED ASSEMBLY DIAGRAM RF connections: Thermocompression bond using three 1-mil diameter, 20 to 30-mil-length gold bonds at RF Input and at RF Output for optimum RF performance. A 1uF, or greater, capacitor should be attached to the gate line within 1-2 cm of the 100pF bypass capacitor for stability. Close placement of external components is essential to stability. Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGA8286-EPU MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7